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PD - 95822A
HEXFET(R) Power MOSFET
Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
IRF6609
Qg
46nC
VDSS
20V
RDS(on) max
2.0m@VGS = 10V 2.6m@VGS = 4.5V
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT
MT
DirectFET ISOMETRIC
Description
The IRF6609 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C PD @TC = 25C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 20 150 31 25 250 2.8 1.8 89 0.022 -40 to + 150
Units
V
A
g Power Dissipation g
Power Dissipation
c
W W/C C
Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
fj Junction-to-Ambient gj Junction-to-Ambient hj Junction-to-Case ij
Junction-to-Ambient
Parameter
Typ.
--- 12.5 20 --- 1.0
Max.
45 --- --- 1.4 ---
Units
C/W
Junction-to-PCB Mounted
Notes through are on page 10
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IRF6609
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
20 --- --- --- 1.55 --- --- --- --- --- 91 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 15 1.6 2.0 --- -6.1 --- --- --- --- --- 46 15 4.7 15 11 20 26 24 95 26 9.8 6290 1850 860 --- --- 2.0 2.6 2.45 --- 1.0 150 100 -100 --- 69 --- --- --- --- --- --- --- --- --- --- --- --- --- pF VGS = 0V VDS = 10V ns nC nC VDS = 10V VGS = 4.5V ID = 17A S nA V mV/C A V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 31A VGS = 4.5V, ID = 25A
e e
VDS = VGS, ID = 250A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 150C VGS = 20V VGS = -20V VDS = 10V, ID = 25A
See Fig. 17 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5VAe ID = 25A Clamped Inductive Load
= 1.0MHz
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ. --- --- Max. 230 25 Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- 0.80 32 26 31 A 250 1.2 48 39 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V TJ = 25C, IF = 25A di/dt = 100A/s
e
e
2
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IRF6609
1000
TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V
1000
TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.7V
0.1 0.1 1
2.7V 60s PULSE WIDTH Tj = 150C
1 0.1 1 10 100
60s PULSE WIDTH Tj = 25C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
1.5
100.0
T J = 150C
10.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ()
ID = 31A VGS = 10V
1.0
T J = 25C
1.0
VDS = 10V 60s PULSE WIDTH
0.1 2.0 3.0 4.0 5.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRF6609
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
12 ID= 17A
VGS, Gate-to-Source Voltage (V)
10 8 6 4 2 0
VDS= 20V VDS= 10V
C, Capacitance (pF)
10000
Ciss Coss
1000
Crss
100 1 10 100
0
20
40
60
80
100
120
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
100.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
T J = 150C
100 100sec
10.0
10
1.0
T J = 25C VGS = 0V
1 Tc = 25C Tj = 150C Single Pulse 0.1 0 1 10 1msec 10msec 100
0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF6609
150 2.5
120
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
90
ID = 250A
60
1.5
30
0 25 50 75 100 125 150
1.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Junction Temperature (C)
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
100
10
Thermal Response ( Z thJA )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4
0.1
Ri (C/W)
0.6784 17.299 17.566 9.4701
i (sec)
0.00086 0.57756 8.94 106
0.01
1
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.0001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF6609
RDS(on), Drain-to -Source On Resistance ( m)
10
1000
EAS, Single Pulse Avalanche Energy (mJ)
ID = 31A
8
800
ID 11A 14A BOTTOM 25A
TOP
6
600
4
400
T J = 125C
2
200
T J = 25C
0 2.0 4.0 6.0 8.0 10.0
0 25 50 75 100 125 150
VGS, Gate-to-Source Voltage (V)
Starting T J, Junction Temperature (C)
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy Vs. Drain Current
LD VDS
15V
VDS
L
DRIVER
+
VDD -
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
0.01
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 14a. Switching Time Test Circuit
90%
VDS
10%
VGS
I AS
td(on)
tr
td(off)
tf
Fig 13b. Unclamped Inductive Waveforms
Fig 14b. Switching Time Waveforms
6
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IRF6609
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Current Regulator Same Type as D.U.T.
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Test Circuit
Fig 17. Gate Charge Waveform
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IRF6609
DirectFET Outline Dimension, MT Outline (Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 C 3.85 0.45 D 0.35 0.82 E 0.78 0.92 F 0.88 1.82 G 1.78 H 0.98 1.02 0.67 J 0.63 K O.88 1.01 2.63 L 2.46 0.70 M 0.59 0.08 N 0.03 0.14 P 0.11 IMPERIAL MIN MAX 0.246 0.250 0.189 0.199 0.152 0.156 0.014 0.018 0.031 0.032 0.035 0.036 0.070 0.072 0.039 0.040 0.025 0.026 0.035 0.039 0.097 0.104 0.023 0.028 0.001 0.003 0.004 0.006
NOTE: CONTROLLING DIMENSIONS ARE IN MM
8
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IRF6609
DirectFET Substrate and PCB Layout, MT Outline (Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
1- Drain 2- Drain 3- Source 4- Source 5- Gate 6- Drain 7- Drain
6 5 7
3 4
1
2
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel, order IRF6618TR1 REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) METRIC METRIC IMPERIAL IMPERIAL MIN CODE MIN MAX MAX MIN MIN MAX MAX 12.992 A 6.9 N.C 177.77 N.C N.C 330.0 N.C 0.795 0.75 B N.C 19.06 N.C 20.2 N.C N.C 0.504 C 0.53 0.50 13.5 0.520 12.8 12.8 13.2 0.059 D 0.059 N.C 1.5 N.C 1.5 N.C N.C E 3.937 2.31 58.72 100.0 N.C N.C N.C N.C F N.C N.C 0.53 N.C 0.724 N.C 13.50 18.4 0.488 G 0.47 11.9 12.4 N.C 0.567 12.01 14.4 H 0.469 0.47 11.9 11.9 N.C 0.606 12.01 15.4
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9
IRF6609
DirectFET Part Marking
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 0.75mH, RG = 25, IAS = 25A. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in. square Cu board.
Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of
part.
R is measured at TJ of approximately 90C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/04
10
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