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| High Power SP5T Antenna Switch MMIC for GSM/UMTS Dual Mode CXG1195XR Description The CXG1195XR is a SP5T antenna switch for GSM/UMTS applications. The low insertion loss on transmit means increased talk time as the Tx power amplifier can be operated at a lower output level. On chip logic reduces component count and simplifies PCB layout by allowing direct connection of the switch to digital base band control lines with the CMOS logic levels. It requires 3 CMOS control lines. The Sony GaAs JPHEMT MMIC process is used for low insertion loss. (Applications: GSM/UMTS dual mode handsets) Features Insertion loss (Tx) : 0.40dB (Typ.) at 34dBm (GSM900) 0.50dB (Typ.) at 32dBm (GSM1800) 0.50dB (Typ.) at 29dBm (UMTS2100) Package Small and low height package size: 20-pin XQFN (2.7mm x 2.7mm x 0.35mm (Typ.)) Structure GaAs JPHEMT MMIC This IC is ESD sensitive device. Special handling precautions are required. The actual ESD test data will be available later. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E05X14-PS CXG1195XR Absolute Maximum Ratings (Ta = 25C) Bias voltage Control voltage Input power max. [Tx1] Input power max. [Tx2] Input power max. [TRx] Input power max. [all_Rx] Operating temparature Storage temperature Maximum power dissipation Topr Tstg PD VDD Vctl 7 5 35 33 32 13 -35 to +85 -65 to +150 750 V V dBm dBm dBm dBm C C (Duty cycle = 12.5 to 50%) (Duty cycle = 12.5 to 50%) mW *E Copper-clad lamination of glass board (4 layers) : 30mm square, t = 0.8mm, FR-4. Note) Use this product without exceeding the PD value specified in this specification. If it is used with exceeding the PD value even for a moment, the heat generated by the operation may cause the degradation or breakdown of the product. Block Diagram F1 ANT F6 F2 Tx2 (GSM1800/1900) F7 F3 Rx1 F8 Tx1 (GSM850/900) F4 F9 Rx2 F5 TRx (UMTS) F10 -2- CXG1195XR Pin Configuration GND GND GND 6 5 Rx1 4 GND 3 Rx2 2 GND 1 GND 16 GND 17 VDD 18 CTLA 19 CTLB 20 CTLC Tx1 10 GND 11 TRx 12 GND 13 GND 14 ANT 15 9 8 Truth Table State 1 2 3 4 5 ON Path ANT - Tx1 ANT - Tx2 ANT - Rx1 ANT - Rx2 ANT - TRx CTLA CTLB CTLC H H L L H H L L/H L/H L L L L H H F1 ON OFF F2 F3 F4 F5 F6 F7 ON OFF ON ON ON F8 ON ON OFF ON ON F9 ON ON ON OFF ON F10 ON ON ON ON OFF OFF OFF OFF OFF OFF ON OFF OFF OFF ON OFF OFF ON OFF ON ON ON ON ON OFF OFF OFF OFF OFF OFF OFF OFF OFF -3- Tx2 7 CXG1195XR Electrical Characteristics (Ta = 25C) Item Symbol Port Tx1 - ANT Tx2 - ANT Insertion loss IL TRx (Tx) - ANT ANT - Rx1 ANT - Rx2 ANT - TRx (Rx) Active path: Tx1 ANT - Rx1 ANT - Rx2 ANT - Tx2 ANT - TRx Active path: Tx2 ANT - Rx1 ANT - Rx2 ANT - TRx Isolation ISO. Active path: TRx ANT - Rx1 ANT - Rx2 Tx1 - ANT Tx2 - ANT Active path: Rx1 Tx1 - ANT Tx2 - ANT Active path: Rx2 Tx1 - ANT Tx2 - ANT VSWR VSWR 2fo 3fo Harmonics 2fo 3fo 2fo 3fo Control current Supply current Switching speed Ictl IDD Swt Tx1 - ANT *1 *1 *2 *1 *2 *1 *2 *3 *2 *1 *1 *2 *3 *4 *5 *6 Condition Min. -- -- -- -- -- -- Typ. 0.35 0.45 0.45 0.5 0.65 0.5 Max. 0.50 0.60 0.60 0.65 0.80 0.65 Unit dB dB dB dB dB dB 25 25 25 1760 to 1830MHz *1 -- -- -- -- -- dB dB dB dB dB 25 25 25 25 25 -- -- -- dB dB dB 25 25 25 25 -- -- -- -- dB dB dB dB 20 20 -- -- dB dB 20 20 1.2 -- -- -45 -35 -38 -33 -40 -35 20 0.2 5 -- -- dB dB -- -35 -30 -33 -30 -35 -30 50 0.5 10 dBm dBm dBm dBm dBm dBm A mA s Tx2 - ANT *2 -- -- TRx - ANT *3 -- -- Vctl = 2.8V VDD = 2.8V -- -- -- -4- CXG1195XR Note) Electrical Characteristics are measured with all RF ports terminated in 50. *1 *2 *3 *4 *5 *6 Power incident on Tx1, Pin = +34dBm (CW), 824 to 915MHz, VDD = 2.8V, Tx1 enabled Power incident on Tx2, Pin = +32dBm (CW), 1710 to 1910MHz, VDD = 2.8V, Tx2 enabled Power incident on TRx, Pin= +29dBm (CW), 1920 to 1980MHz, VDD = 2.8V, TRx enabled Power incident on ANT, Pin = -5dBm, 869 to 894MHz, 925 to 960MHz, VDD = 2.8V, Rx1 enabled Power incident on ANT, Pin = -5dBm, 1805 to 1880MHz, 1930 to 1990MHz, VDD = 2.8V, Rx2 enabled Power incident on ANT, Pin = -5dBm, 2110 to 2170MHz, VDD = 2.8V, TRx enabled DC Bias Condition (Ta = 25C) Item Vctl (H) Vctl (L) VDD Min. 2.0 0 2.6 Typ. 2.8 -- 2.8 Max. 3.6 0.4 3.6 Unit V V V -5- CXG1195XR Recommended Circuit Tx1 GND GND CRF (100pF) 9 8 7 Tx2 GND CRF (100pF) 6 5 CRF (100pF) TRx CRF (100pF) GND 13 3 CRF (100pF) GND 14 2 GND Rx2 12 4 GND Rx1 10 GND 11 ANT CRF (100pF) 15 16 17 18 19 20 1 GND GND Cbypass Cbypass Cbypass Cbypass (100pF) (100pF) (100pF) (100pF) VDD CTLA CTLB CTLC When using this IC, the following external components should be used: CRF: This capacitor is used for RF decoupling and must be used for all applications. 100pF is recommended. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended. -6- CXG1195XR Package Outline (Unit: mm) LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL SOLDER COMPOSITION PLATING THICKNESS SPEC. COPPER ALLOY Sn-Bi Bi:1-4wt% 5-18m -7- Sony Corporation |
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