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BY527
Vishay Telefunken
Silicon Mesa Rectifier
Features
D D D D D
Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability
Applications
General purpose
94 9539
Absolute Maximum Ratings
Tj = 25_C Parameters Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) Junction and storage temperature range Test Conditions Type Symbol VRSM VR IFSM IFRM IFAV PR ER i2*t Tj=Tstg Value 1250 800 50 12 2 1000 20 8 -55...+175 Unit V V A A A W mJ A2*s
tp=10ms, half sinewave =180 Tj=175C, tp=20ms, half sinus wave I(BRV)R=1A, Tj=175C i2*t-rating
C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W
Document Number 86007 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 1 (4)
BY527
Vishay Telefunken Electrical Characteristics
Tj = 25_C Parameter Forward voltage g Reverse current Breakdown voltage Diode capacitance Reverse recovery time y Test Conditions IF=1A IF=10A VR=800V VR=800V, Tj=100C IR=100mA, tp/T=0.01, tp=0.3ms VR=0, f=0.47MHz IF=0.5A, IR=1A, iR=0.25A IF=1A, di/dt=5A/ms, VR=50V IF=1A, di/dt=5A/ms Type Symbol VF VF IR IR V(BR) CD trr trr Qrr Min Typ 0.9 0.1 5 1250 50 4 4 3 Max 1.0 1.65 1 10 Unit V V
mA mA
V pF
ms ms mC
Reverse recovery charge
Characteristics (Tj = 25_C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 l 100 80 60 40 20 0 0 5 10 15 20 25 30
94 9163
1.2 l I FAV- Average Forward Current ( A ) 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 200 l - Lead Length ( mm ) Tamb - Ambient Temperature ( C ) RthJA=100K/W PCB VR = VR RM
TL=constant
94 9101
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000 I FAV- Average Forward Current ( A ) 2.0 1.6 1.2 0.8 RthJA 0.4 0 200
94 9172
I R - Reverse Current ( mA )
100 Scattering Limit 10
1 VR = VR RM 0 40 80 120 160
v45K/W
80 120 160 200
VR = VR RM l=12mm 0 40
0.1
94 9176
Tj - Junction Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Max. Average Forward Current vs. Ambient Temperature
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Document Number 86007 Rev. 2, 24-Jun-98
BY527
Vishay Telefunken
100 CD - Diode Capacitance ( pF ) Tj = 25C IF - Forward Current ( A ) 10 Tj = 175C 80 f = 0.47 MHz Tj = 25C
60
1
40
0.1
20
0.01 0
94 9175
0 0.6 1.2 1.8 2.4 3.0
94 9177
0.1
1
10
100
VF - Forward Voltage ( V )
VR - Reverse Voltage ( V )
Figure 5. Typ. Forward Current vs. Forward Voltage
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
Z thp - Thermal Resistance for Pulse Cond. (K/W)
1000 VR RM= 1000 V, RthJA=100K/W 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 1 10-5 tp/T=0.01 10-4 10-3 10-2 10-1 100 101 Tamb= 60C Tamb= 70C Tamb= 100C 100 101 IFRM - Repetitive Peak Forward Current ( A ) 102 Tamb= 25C Tamb= 45C
94 9178
tp - Pulse Length ( s )
Figure 7. Thermal Response
Dimensions in mm
3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification
technical drawings according to DIN specifications 94 9538
0.82 max.
26 min.
4.2 max.
26 min.
Document Number 86007 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 3 (4)
BY527
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de * FaxBack +1-408-970-5600 4 (4)
Document Number 86007 Rev. 2, 24-Jun-98

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