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| Transistor 2SB1320A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1991A (0.7) Unit: mm 6.90.1 (4.0) 2.50.1 (0.8) (1.0) 3.50.1 s Features q q High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. (0.85) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -60 -50 -7 -200 -100 400 150 -55 ~ +150 Unit 14.50.5 0.45+0.10 -0.05 2.50.5 1.050.05 2.50.5 0.45+0.10 -0.05 V V V mA mA mW C C 1.20.1 0.65 max. 0.45+0.1 - 0.05 1 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT-1-A1 Package (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE*1 VCE(sat) fT Cob Conditions VCB = -20V, IE = 0 VCE = -20V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 80 3.5 -60 -50 -7 160 460 -1 V MHz pF min typ max -1 -1 Unit A A V V V *1h FE Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 Rank hFE 248 (0.8) Transistor PC -- Ta 500 -120 Ta=25C 450 -100 -50 2SB1320A IC -- VCE -60 VCE=-5V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 -80 IB=-300A -60 -250A -200A -40 -150A -100A -20 -50A 0 0 -2 -4 -6 -8 -10 -12 Collector current IC (mA) 400 -40 -30 -20 -10 0 0 -150 -300 -450 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE -400 VCE=-5V Ta=25C -350 -200 -240 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 VCE=-5V VCE(sat) -- IC IC/IB=10 Base current IB (A) -300 -250 -200 -150 -100 -50 0 0 - 0.6 -1.2 -1.8 Collector current IC (mA) -160 Ta=75C 25C -25C - 0.3 25C - 0.1 Ta=75C -120 -25C -80 - 0.03 - 0.01 -40 - 0.003 - 0.001 -1 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 600 VCE=-5V 160 VCB=-10V Ta=25C fT -- I E 8 Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 140 120 100 80 60 40 20 7 6 5 4 3 2 1 0 -1 400 Ta=75C 300 25C -25C 200 100 0 -1 -3 -10 -30 -100 -300 -1000 0 0.1 0.3 1 3 10 30 100 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 249 Transistor Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 6 IE=1mA f=10.7MHz Ta=25C 6 VCB=-5V f=1kHz Rg=2k Ta=25C 2SB1320A NF -- IE 20 18 16 VCB=-5V Rg=50k Ta=25C NF -- IE 5 5 Noise figure NF (dB) Noise figure NF (dB) 4 4 14 12 10 8 6 4 2 10kHz f=100Hz 1kHz 3 3 2 2 1 1 0 0 -5 -10 -15 -20 -25 -30 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 - 0.1 - 0.3 -1 -3 -10 Collector to emitter voltage VCE (V) Emitter current IE (mA) Emitter current IE (mA) h Parameter -- IE 300 hfe 100 100 300 h Parameter -- VCB 100 IE=-2mA f=270Hz Ta=25C 30 ICBO -- Ta VCB=-10V hfe 30 hoe (S) 30 hoe (S) 10 ICBO (Ta) ICBO (Ta=25C) h Parameter h Parameter 10 10 3 hie (k) VCB=-5V f=270Hz Ta=25C -3 -10 3 hre (10-4) hie (k) 3 1 - 0.1 hre (10-4) - 0.3 -1 1 -1 1 -3 -10 -30 -100 0 25 50 75 100 125 150 Emitter current IE (mA) Collector to base voltage VCB (V) Ambient temperature Ta (C) 250 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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