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| Product Bulletin OP999 June 1996 PIN Silicon Photodiode Type OP999 Features *Narrow receiving angle *Linear response vs. irradiance *Fast switching time *T-1 3/4 package style Description The OP999 photodiode consists of a PIN silicon photodiode mounted in a dark blue plastic injection molded shell package. The narrow receiving angle provides excellent on-axis coupling. The sensors are 100% production tested for close correlation with Optek GaAlAs emitters. Optek' packaging process provides s excellent optical and mechanical axis alignment. The shell also provides excellent optical lens surface, control of chip placement, and consistency of the outside package dimensions. Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C Lead Soldering Temperature (1/16 inch [1.6 mm] from case for 5 sec. with soldering iron). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/o C above 25o C. (3) Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of 890 nm and Ee(APT) of 0.25 mW/cm2. (4) This dimension is held to within 0.005" on the flange edge and may vary up to 0.020" in the area of the leads. Typical Performance Curves Relative Response vs. Wavelength Coupling Characteristics OP999 and OP299 VR = 5 V IF = 20 mA - Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 3-66 Distance Between Lens Tips - inches (972) 323-2200 Fax (972) 323-2396 Type OP999 Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL IL ID V(BR) VF CT tr, tf PARAMETER Reverse Light Current Reverse Dark Current Reverse Breakdown Voltage Forward Voltage Total Capacitance Rise Time, Fall Time MIN TYP MAX UNITS 6.5 1 60 1.2 4 5 15 60 A nA V V pF ns TEST CONDITIONS VR = 5 V, Ee = 0.25 mW/cm2(3) VR = 30 V, Ee = 0 IR = 100 A IF = 1 mA VR = 20 V, Ee = 0, f = 1.0 MHz VR = 20 V, = 850 nm, RL = 50 Typical Performance Curves Normalized Light Current vs Reverse Voltage Total Capacitance vs Reverse Voltage Normalized Light and Dark Current vs Ambient Temperature VR = 5 V = 890 nm Normalized to TA = 25o C TA = 25o C Ee = 0 mW/cm2 f = 1 MHz TA = 25o C = 935 nm Normalized to VR = 5 V Light Current Dark Current VR - Reverse Voltage - V VR - Reverse Voltage - V TA - Ambient Temperature - oC Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement VR = 5 V TA = 25o C = 890 nm Test Conditions: = 935 nm VR = 5 V Ee - Irradiance - mW/cm2 - Angular Displacement - Deg. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-67 |
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