 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| OM6516SC OM6520SC INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES * * * * * * * * Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This IGBT power transistor features the high switching speeds of a power MOSFET and the low on-resistance of a bipolar transistor. It is ideally suited for high power switching applications such as frequency converters for 3O motors, UPS and high power SMPS. MAXIMUM RATINGS @ 25C Unless Specified Otherwise PART NUMBER OM6516SC OM6520SC IC (Cont.) @ 90C, A 25 25 V(BR)CES V 1000 1000 VCE (sat) (Typ.) V 4.0 4.0 Tf (Typ.) ns 300 300 qJC C/W 1.0 1.0 PD W 125 125 TJ C 150 150 3.1 SCHEMATICS Collector Collector .165 .155 MECHANICAL OUTLINE .695 .685 .270 .240 .045 .035 .835 .815 Gate Gate .707 .697 1 C 2 E 3 G .550 .530 .092 MAX. Emitter Emitter .750 .500 .065 .055 .140 TYP. .005 OM6516SC OM6520SC(w/Diode) .200 TYP. PACKAGE OPTIONS NOTE: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. MOD PAK 4 11 R2 Supersedes 2 07 R1 6 PIN SIP 3.1 - 155 3.1 OM6516SC OM6520SC PRELIMINARY DATA: OM6516SC IGBT CHARACTERISTICS Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current 0.25 1.0 100 mA mA nA Min. Typ. Max. Units Test Conditions 1000 V VCE = 0 IC = 250 A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 0 TC = 125C IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tf Eoff Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Turn-Off Losses 5.5 2000 160 65 50 200 200 300 200 200 1.5 S pF pF pF nS nS nS nS nS nS VCEclamp = 600 V, IC = 15 A VGE = 15 V, Rg = 3.3 VCE = 20 V, IC = 15 A VGE = 0 VCE = 25 V f = 1 mHz VCC = 600 V, IC = 15 A VGE = 15 V, Rg = 3.3 , Tj = 125C 4.0 4.5 V 4.5 3.0 6.5 V V VCE = VGE, IC = 1 mA VGE = 15 V, IC = 15 A TC = 25C VGE = 15 V, IC = 15 A TC = 125C VCE(sat) Collector Emitter VGE = 20 V VCE = 0 V PRELIMINARY DATA: OM6520SC IGBT CHARACTERISTICS Parameter - OFF (see Note 1) V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tf Eoff Vf Ir trr Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Turn-Off Losses Maximum Forward Voltage Maximum Reverse Current Reverse Recovery Time 5.5 2000 160 65 50 200 200 300 200 200 1.5 1.85 1.70 500 7.0 50 S pF pF pF nS nS nS nS nS nS VCEclamp = 600 V, IC = 15 A VGE = 15 V, Rg = 3.3 VCE = 20 V, IC = 15 A VGE = 0 VCE = 25 V f = 1 mHz VCC = 600 V, IC = 15 A VGE = 15 V, Rg = 3.3 , Tj = 125C 4.0 4.5 V 4.5 3.0 6.5 V V VCE = VGE, IC = 1 mA VGE = 15 V, IC = 15 A TC = 25C VGE = 15 V, IC = 15 A TC = 125C VCE(sat) Collector Emitter 0.25 1.0 100 mA mA nA Min. Typ. Max. Units Test Conditions 1000 V VCE = 0 IC = 250 A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 0 TC = 125C VGE = 20 V VCE = 0 V 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Switching-Resistive Load Switching-Resistive Load Switching-Inductive Load Switching-Inductive Load mWs L = 1 mH, Tj = 125C mWs L = 1 mH, Tj = 125C V V A mA nS IF = 30 A, TC = 25C IF = 30 A, TC = 150C VR = 1000 V, TC = 25C VR = 800 V, TC = 125C IF = 1 A, di / dt = -15 A /S VR = 30 V, Tj = 25C DIODE CHARACTERISTICS Note 1: Limited by diode Ir characteristic. |
Price & Availability of OM6516SC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |