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| FMMT459 450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR SUMMARY VCEO=450V; VCE(sat) = 100mV; IC= 150mA DESCRIPTION This new high voltage tranistor provides users with very effiecient performance combining low VCE (sat) and Hfe to give extremely low on state losses at 450V operation, making it ideal for use in high efficiency Telecom and protected line switching applications. FEATURES * * * * * * * * * Low Saturation Voltage - 90mV @ 50mA Hfe Min 50 @ 30 mA IC=150mA Continuous SOT23 package with Ptot 625mW Specification can be supplied in larger package outlines SOT23 APPLICATIONS Electronic test equipment Off line switching circuits Piezo Actuators. RCD circuits. E C B TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units Top View ORDERING INFORMATION DEVICE FMMT459TA FMMT459TC REEL SIZE (inches) 7 13 DEVICE MARKING 459 ISSUE 2 - DECEMBER 2001 1 FMMT459 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25C (a) Linear Derating Factor Power Dissipation at TA=25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 500 450 5 500 150 200 625 5 806 6.4 -55 to +150 UNIT V V V mA mA mA mW mW/C mW mW/C C PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 200 155 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. ISSUE 2 - DECEMBER 2001 2 FMMT459 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time SYMBOL V (BR)CBO V CEO(sus) V (BR)EBO I CBO I EBO I CES V CE(sat) V BE(sat) V BE(on) H FE fT C OBO t (on) t (off) 113 3450 50 50 5 60 70 .76 .71 120 70 MHz PF MIN. 500 450 5 TYP. 700 500 8 MAX. UNIT V V V CONDITIONS I C = 100A I C = 10mA* I E = 100A V CB = 450V V EB = 5V V CE = 450V I C = 20mA, I B = 2mA* I C = 50mA, I B = 6mA* I C = 50mA, I B = 5mA* I C = 50mA, V CE = 10V* I C = 30mA, V CE = 10V* I C = 50mA, V CE = 10V* I C = 10mA, V CE = 20V F = 20MH Z V CB = 20V, f = 1MH Z I C = 50mA, V C = 100V I B1 = 5mA, I B2 = 10mA I C = 50mA, V C = 100V I B1 = 5mA, I B2 = 10mA 100 100 100 75 90 .9 .9 nA nA nA mV mV V V ns ns *Measured under plused conditions. Pulse width = 300s. Dury cycle <2% NB. For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between Terminals. ISSUE 2 - DECEMBER 2001 3 FMMT459 ELECTRICAL CHARACTERISTICS 1 Tamb=25C IC/IB=50 0.40 0.35 0.30 IC/IB=20 100C 25C -55C VCE(SAT) (V) VCE(SAT) (V) 0.25 0.20 0.15 0.10 0.05 100m IC/IB=10 IC/IB=20 10m 1m IC Collector Current (A) 10m 100m 1m VCE(SAT) v IC IC Collector Current (A) 10m 100m VCE(SAT) v IC 1.2 VCE=10V 100C 25C 210 180 1.0 IC/IB=20 Normalised Gain Typical Gain (hFE) VBE(SAT) (V) 1.0 0.8 0.6 0.4 0.2 0.0 1m 10m 100m -55C 150 120 90 60 30 0 0.8 -55C 0.6 25C 100C 0.4 1m 10m 100m IC Collector Current (A) hFE v IC IC Collector Current (A) VBE(SAT) v IC 1.0 VCE=10V 0.8 VBE(ON) (V) -55C 0.6 25C 100C 0.4 1m IC Collector Current (A) 10m 100m VBE(ON) v IC ISSUE 2 - DECEMBER 2001 4 FMMT459 THERMAL CHARACTERISTICS Max Power Dissipation (W) 1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 IC Collector Current (A) 100m DC 1s 10m 100ms 10ms 1ms 100s 1m 100m Single Pulse Tamb=25C 1 10 100 VCE Collector-Emitter Voltage (V) Temperature (C) Safe Operating Area Thermal Resistance (C/W) 200 150 D=0.5 Derating Curve 100 50 D=0.2 D=0.1 Single Pulse D=0.05 0 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ISSUE 2 - DECEMBER 2001 5 FMMT459 PACKAGE DIMENSIONS PAD LAYOUT DETAILS DIM Millimetres Min A B C D F G K L N 2.67 1.20 - 0.37 0.085 NOM 1.9 0.01 2.10 NOM 0.95 N Inches Max 3.05 1.40 1.10 0.53 0.15 Min 0.105 0.047 - 0.0145 0.0033 NOM 0.075 0.10 2.50 0.0004 0.0825 NOM 0.037 Max 0.120 0.055 0.043 0.021 0.0059 0.004 0.0985 (c) Zetex plc 2001 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - DECEMBER 2001 6 |
Price & Availability of FMMT459
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