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| Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES * Extremely fast switching * Low reverse recovery current * Low thermal resistance * Reduces switching losses in associated MOSFET BYC8-600 SYMBOL QUICK REFERENCE DATA VR = 600 V VF 1.85 V IF(AV) = 8 A trr = 19 ns (typ) k 1 a 2 APPLICATIONS * Active power factor correction * Half-bridge lighting ballasts * Half-bridge/ full-bridge switched mode power supplies. The BYC8-600 is supplied in the SOD59 (TO220AC) conventional leaded package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current CONDITIONS MIN. -40 MAX. 600 600 500 8 16 55 60 150 150 UNIT V V V A A A A C C Tstg Tj Tmb 110 C = 0.5; with reapplied VRRM(max); Tmb 82 C Repetitive peak forward current = 0.5; with reapplied VRRM(max); Tmb 82 C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150C prior to surge with reapplied VRWM(max) Storage temperature Operating junction temperature THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. TYP. 60 MAX. 2.2 UNIT K/W K/W April 2001 1 Rev 1.400 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR trr trr trr Irrm Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery time Reverse recovery time Reverse recovery time Peak reverse recovery current Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150C IF = 16 A; Tj = 150C IF = 8 A; VR = 600 V VR = 500 V; Tj = 100 C IF = 1 A; VR = 30 V; dIF/dt = 50 A/s IF = 8 A; VR = 400 V; dIF/dt = 500 A/s IF = 8 A; VR = 400 V; dIF/dt = 500 A/s; Tj = 100C IF = 8 A; VR = 400 V; dIF/dt = 50 A/s; Tj = 125C IF = 8 A; VR = 400 V; dIF/dt = 500 A/s; Tj = 100C IF = 10 A; dIF/dt = 100 A/s MIN. TYP. 1.4 1.7 2.0 9 1.1 30 19 32 1.5 9.5 8 BYC8-600 MAX. 1.85 2.3 2.9 150 3.0 52 40 5.5 12 10 UNIT V V V A mA ns ns ns A A V IL Vin 150 uH typ ID Vo = 400 V d.c. OUTPUT DIODE Vin Vin = 400 V d.c. IR IF inductive load IL 500 V MOSFET Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction, mode where the transistor turns on whilst forward current is still flowing in the diode. Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. April 2001 2 Rev 1.400 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC8-600 25 20 15 10 Forward dissipation, PF (W) Vo = 1.4 V Rs = 0.05625 Ohms BYC8-600 Tmb(max) C 95 D = 1.0 106 117 ID dIF/dt Irrm ID = IL losses due to diode reverse recovery 0.5 0.2 0.1 time I tp D= tp T t 128 VD 139 5 T 0 0 2 4 6 8 10 Average forward current, IF(AV) (A) 150 12 Fig.3. Maximum forward dissipation as a function of average forward current; rectangular current waveform where IF(AV) =IF(RMS) x D. Fig.6. Origin of switching losses in transistor due to diode reverse recovery. 0.25 Diode reverse recovery switching losses, Pdsw (W) f = 20 kHz Tj = 125 C 0.2 VR = 400 V 100 Reverse recovery time, trr (ns) BYC8-600 16 A 12 A 8A 0.15 16 A 0.1 12 A IF = 5 A IF = 8 A 0.05 BYC8-600 0 100 Rate of change of current, dIF/dt (A/us) 1000 Tj = 125 C VR = 400 V 10 100 Rate of change of current, dIF/dt (A/us) 1000 Fig.4. Typical reverse recovery switching losses in diode, as a function of rate of change of current dIF/dt. Fig.7. Typical reverse recovery time trr, as a function of rate of change of current dIF/dt. Transistor losses due to diode reverse recovery, Ptsw (W) f = 20 kHz Tj = 125 C 7 16 A VR = 400 V 6 12 A 5 8 4 3 2 1 BYC8-600 0 100 Rate of change of current, dIF/dt (A/us) 1000 IF = 5 A 8A 100 Peak reverse recovery current, Irrm (A) BYC8-600 10 16 A IF = 5 A 1 100 Tj = 125 C VR = 400 V Rate of change of current, dIF/dt (A/us) 1000 Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dIF/dt. Fig.8. Typical peak reverse recovery current, Irrm as a function of rate of change of current dIF/dt. April 2001 3 Rev 1.400 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC8-600 I dI F dt F 20 Forward current, IF (A) Tj = 25 C Tj = 150 C BYC8-600 t 15 rr time typ 10 max Q I I s 10% 100% 5 R rrm 0 0 1 2 Forward voltage, VF (V) 3 4 Fig.9. Definition of reverse recovery parameters trr, Irrm Fig.12. Typical and maximum forward characteristic IF = f(VF); Tj = 25C and 150C. 20 Peak forward recovery voltage, Vfr (V) Tj = 25 C IF = 10 A BYC8-600 100mA Reverse leakage current (A) BYC8-600 15 typ 10mA Tj = 125 C 100 C 75 C 1mA 10 100uA 50 C 25 C 5 10uA 0 0 50 100 150 Rate of change of current, dIF/dt (A/ s) 200 1uA 0 100 200 300 400 Reverse voltage (V) 500 600 Fig.10. Typical forward recovery voltage, Vfr as a function of rate of change of current dIF/dt. Fig.13. Typical reverse leakage current as a function of reverse voltage. IR = f(VR); parameter Tj Transient thermal impedance, Zth j-mb (K/W) I F 10 1 time VF 0.1 0.01 P D tp D= V VF time tp T t fr 0.001 1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYC8 10s Fig.11. Definition of forward recovery voltage Vfr Fig.14. Maximum thermal impedance Zth j-mb as a function of pulse width. April 2001 4 Rev 1.400 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYC8-600 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 3,0 max not tinned 3,0 15,8 max 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 0,6 2,4 5,08 Fig.15. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 2001 5 Rev 1.400 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYC8-600 This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 2001 6 Rev 1.400 |
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