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| 2 Semiconductor STD882 NPN Silicon Transistor Description * * * * Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STB772 Switching Application Features * Low collector saturation voltage VCE(sat)=0.4V(Max.) Ordering Information Type NO. STD882 Marking STD882 Package Code MPT Outline Dimensions unit : mm 6.50.2 21.51.0 1.10.1 1.2 Max. 14.00.40 0.70 Max. 0.4~0.6 1 2 3 2.50.1. 5.00.2 1.27 Typ. 2.54 Typ. 123 0.50.2 3.40.2 2.00.1 12.5 Min. 8.50.2 PIN Connections 1. Emitter 2. Collector 3. Base KST-B010-001 1 STD882 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current(DC) Collector current(Pulse) * Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) * PC Tj Tstg Ratings 40 15 7 5 8 1.2 150 -55~150 Unit V V V A A W C C * Pulse Test : Pulse Width=10ms (Max.), Duty Cycle=30%(Max.) Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE fT Cob 2 Test Condition IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=100mA VCE=6V, IE=-50mA VCB=20V, IE=0, f=1MHz Min. Typ. Max. 40 15 7 160 100 150 0.1 0.1 320 0.4 50 Unit V V V A A V MHz pF VCE(sat) KST-B010-001 2 STD882 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 hFE - IC Fig. 3 VCE(sat) - IC Fig. 4 fT - IC Fig. 5 Cob - VCB Fig. 6 Safe operating Area Continuous * * ) KST-B010-001 3 |
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