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| (R) STBV32 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32 is designed for use in compact fluorescent lamp application. Ordering codes: STBV32 (shipment in bulk) STBV32-AP (shipment in ammopack) TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage o (I C = 0, IB = 0.5 A, tp < 10s, T j < 150 C) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 oC St orage Temperature Max. Operating Junction T emperature Value 700 400 BV EBO 1 3 0.5 1.5 1.1 -65 to 150 150 Uni t V V V A A A A W o o C C August 2001 1/7 STBV32 THERMAL DATA R thj-a Thermal Resistance Junction-ambient Max 112 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV BV EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter-Base Breakdown Voltage (I C = 0) Test Cond ition s V CE = 700V V CE = 700V I E = 10 mA T j = 125 C 9 o Min. Typ . Max. 1 5 18 Un it mA mA V V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain RESISTIVE LO AD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time I C = 10 mA L = 25mH I C = 0.5 A IC = 1 A I C = 1.5 A I C = 0.5 A IC = 1 A I C = 0.5 A IC = 1 A IC = 1 A I B1 = 0.2 A T p = 25 s IC = 1 A V BE = -5 V V c la mp = 300 V I B = 0.1 A IB = 0.25 A I B = 0.5 A I B = 0.1 A IB = 0.25 A V CE = 2 V VCE = 2 V V CC = 125 V I B2 = -0.2 A I B1 = 0.2 A L = 50 mH 400 V 0.5 1 3 1 1.2 8 5 35 25 1 4 0.7 0.8 V V V V V V BE(s at) h FE tr ts tf ts s s s s Pulsed: Pulse duration = 300s, duty cycle = 1.5 %. 2/7 STBV32 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 STBV32 Inductive Fall Time Inductive Storage Time Reverse Biased SOA 4/7 STBV32 Figure 1: Inductive Load Switching Test Circuits. 1) F ast electr onic switch 2) Non-inductive Resistor 3) F ast recovery rectifier Figure 2: Resistive Load Switching Test Circuits. 1) F ast electr onic switch 2) Non-inductive Resistor 5/7 STBV32 TO-92 MECHANICAL DATA mm DIM. MIN. TYP. MAX. MIN. inch TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D 12.7 0.500 E 1.27 0.050 F 0.4 0.51 0.016 0.020 G 0.35 0.14 6/7 STBV32 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7 |
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