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| KSD5701 KSD5701 High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) * High Collector-Base Voltage : VCBO=1500V * High Switching Speed : tF = 0.4s (Max.) * For Color TV B Equivalent Circuit C 1 50 typ. E TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 1500 800 6 3.5 10 50 150 - 55 ~ 150 Units V V V A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT VF tF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Damper Diode Turn On Voltage Fall Time Test Condition VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 2.5A IC = 2.5A, IB = 0.8A IC = 2.5A, IB = 0.8A VCE = 10V, IC = 0.5A IF = 3.5A VCC = 200V, IC = 3A IB1 = 0.8A, IB2 = - 1.6A RL = 66.7 3 2 0.4 Min. 40 10 2.5 Typ. Max. 10 250 30 5 1.5 V V MHz V s Units A mA (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSD5701 Typical Characteristics 8 100 VCE = 5V 7 IC[A], COLLECTOR CURRENT 5 4 3 IB = 2.0A IB = 1.8A IB = 1.6A IB = 1.4A IB = 1.2A IB = 1.0A IB = 0.8A IB = 0.6A IB = 0.4A IB = 0.2A hFE, DC CURRENT GAIN 6 10 2 1 0 0 1 2 3 4 5 6 7 8 9 10 1 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 100 8 VCE(sat)[V], SATURATION VOLTAGE VCE = 5V 7 IC[A], COLLECTOR CURRENT 10 IC = 5 IB 10 6 5 1 4 IC = 3 IB 3 0.1 2 1 0.01 0.1 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage tF[S], COLLECTOR CURRENT FALL TIME 1.0 10 0.8 tSTG[S], STORAGE TIME 8 6 0.6 IC = 1.5A 4 IC = 2.5A IC = 2.0A 0.4 IC = 2.5A IC = 2.0A IC = 1.5A 2 0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 dIB/dt[A/S], BASE CURRETN GRADIENT dIB/dt[A/S], BASE CURRETN GRADIENT Figure 5. Switching Characteristic 1 Figure 6. Switching Characteristic 2 (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSD5701 Typical Characteristics (Continued) 100 100 SINGLE PULSE TC=25 C 10 O IC=5IB1=-5IB2 L=500uH SINGLE PULSE IC MAX.(Pulse) 10 IC max(Pulse) 100s IC max(DC) DC 1 300s 1ms 10ms IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT IB2=-0.5A Const @ IC>2.5A 1 0.1 0.01 1 10 100 1000 0.1 2000 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Safe Operating Area Figure 8. Reverse Bias Safe Operating Area 80 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 9. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSD5701 Package Demensions TO-3PF 5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50) 10.00 0.20 10 26.50 0.20 23.00 0.20 16.50 0.20 14.50 0.20 0.85 0.03 16.50 0.20 2.00 0.20 14.80 0.20 2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10 +0.20 2.00 0.20 2.50 0.20 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.90 -0.10 +0.20 3.30 0.20 2.00 0.20 5.50 0.20 1.50 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 22.00 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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