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| July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features N-Channel 5.5 A,30 V, RDS(ON)=0.030 @ VGS=4.5 V RDS(ON)=0.038 @ VGS=2.5 V. P-Channel -4 A,-20 V, RDS(ON)=0.055 @ VGS=-4.5 V RDS(ON)=0.072 @ VGS=-2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 7 4 3 2 1 S FD 8A 2 89 S2 G2 G1 8 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25C unless otherwise noted N-Channel 30 8 (Note 1a) P-Channel -20 -8 -4 -20 2 Units V V A 5.5 20 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 1.6 1 0.9 -55 to 150 C TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W (c) 1998 Fairchild Semiconductor Corporation FDS8928A Rev. B Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25 oC ID = -250 A, Referenced to 25 oC IDSS IGSSF IGSSR VGS(th) Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = -16 V, VGS = 0 V Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25 C ID = -250 A, Referenced to 25 C RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 5.5 A VGS = 2.5 V, ID = 4.5 A VGS = -4.5 V, ID = -4 A VGS = -2.5 V, ID = -3.4 A ID(on) gFS On-State Drain Current VGS = 4.5 V, VDS= 5 V VGS = -4.5 V, VDS= -5 V Forward Transconductance VDS = 5 V, I D = 5.5 A VDS = -5 V, I D = -4 A DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz N-Ch P-Ch N-Ch VDS = -10 V, VGS = 0 V, f = 1.0 MHz P-Ch N-Ch P-Ch 900 1130 410 480 110 120 pF pF pF N-Ch P-Ch N-Ch P-Ch 20 -20 20 13 S S P-Ch o o N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch All All 30 -20 32 -23 1 -1 100 -100 V V mV/oC BVDSS/TJ Breakdown Voltage Temp. Coefficient A A nA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage N-Ch P-Ch N-Ch P-Ch N-Ch 0.4 -0.4 0.67 -0.6 -3 4 0.025 0.031 0.043 0.059 0.03 0.038 0.055 0.072 A 1 -1 V V mV/oC VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient Input Capacitance Reverse Transfer Capacitance FDS8928A Rev. B Electrical Characteristics (continued) SWITCHING CHARACTERISTICS Symbol tD(on) Parameter Turn - On Delay Time (Note 2) Conditions VDS = 6 V, I D = 1 A VGS = 4.5 V , RGEN = 6 Type N-Ch P-Ch N-Ch P-Ch Min Typ 6 8 19 23 42 260 13 90 19.8 20 2 2.8 6.3 3.2 Max 12 16 31 37 67 360 24 125 28 28 Units ns tr tD(off) Turn - On Rise Time ns Turn - Off Delay Time VDS= -10 V, I D = -1 A VGS = -4.5 V , RGEN = 6 N-Ch P-Ch N-Ch P-Ch ns tf Qg Qgs Qgd Turn - Off Fall Time ns Total Gate Charge VDS = 10 V, I D = 5.5 A, VGS = 4.5 V N-Ch P-Ch N-Ch nC Gate-Source Charge VDS = -5 V, I D = -4 A, Gate-Drain Charge VGS = -5 V nC P-Ch N-Ch P-Ch nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current N-Ch P-Ch 1.3 -1.3 0.68 -0.7 1.2 -1.2 A A V V Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A (Note 2) (Note 2) N-Ch P-Ch a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. c. 135OC/W on a 0.003 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.. FDS8928A Rev. B Typical Electrical Characteristics: N-Channel 30 I D , DRAIN-SOURCE CURRENT (A) 2.5V R DS(ON) , NORMALIZED 24 3.0V 2.0V DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2 1.6 18 VGS = 2.0V 2.5 V 1.2 12 3.0V 3.5 V 4.5V 6 1.5V 0 0 1 2 3 4 5 VDS , DRAIN-SOURCE VOLTAGE (V) 0.8 0 6 12 18 24 30 I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED 0.1 R DS(ON) , ON-RESISTANCE (OHM) 1.6 1.4 1.2 1 0.8 0.6 -50 I D = 5.5 A VGS = 4.5 V 0.075 I D = 3A 0.05 TA = 125C 0.025 25C 0 1 V 2 GS -25 0 25 50 75 100 125 150 3 4 5 TJ , JUNCTION TEMPERATURE (C) , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. V DS =5V I D , DRAIN CURRENT (A) 16 TA = -55C 25C 125C I S , REVERSE DRAIN CURRENT (A) 20 20 V GS = 0V 1 TA = 125C 0.1 25C -55C 0.01 12 8 4 0.001 0 0.0001 0 0.5 V GS 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2 , GATE TO SOURCE VOLTAGE (V) VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8928A Rev. B Typical Electrical Characteristics: N-Channel (continued) 5 VGS , GATE-SOURCE VOLTAGE (V) 3000 ID = 5.5A 4 CAPACITANCE (pF) VDS = 5V 10V 15V 1000 500 C iss C oss 3 2 200 80 1 30 0.1 f = 1 MHz V GS = 0V 0.4 1 2 5 10 C rss 0 0 5 10 15 20 25 Q g , GATE CHARGE (nC) 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 S(O N IM )L IT 30 I D , DRAIN CURRENT (A) 10 3 1 0.3 0.1 0.03 0.01 0.1 RD 1m 10m 100 1s 10s DC ms s 100 s us POWER (W) 25 20 15 10 5 0 0.01 SINGLE PULSE RJA =135 C/W TA = 25C VGS = 4.5V SINGLE PULSE RJA =135 C/W TA = 25C 0.2 0.5 1 2 0.1 0.5 10 50 100 300 5 10 20 30 50 SINGLE PULSE TIME (SEC) VDS , DRAI N-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDS8928A Rev. B Typical Electrical Characteristics: P-Channel -ID , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE 30 2 VGS = -4.5V -3.5V -3.0V - 2.5V R DS(ON), NORMALIZED 24 1.6 18 VGS = - 2.0V -2.5 V 1.2 -2.0V 12 -3.0 V -3.5V -4.5V 6 -1.5V 0 0.8 0 1 2 3 4 5 - VDS , DRAIN-SOURCE VOLTAGE (V) 0 6 12 18 24 30 -I D , DRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE 0.2 R DS(ON) , ON-RESISTANCE (OHM) I D = -4.0A 1.4 I D = -2A 0.15 V GS = -4.5V R DS(ON), NORMALIZED 1.2 0.1 1 TA = 125C 0.05 0.8 25C 0 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 0 1 2 3 4 5 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. - IS , REVERSE DRAIN CURRENT (A) 10 10 VDS = -5V - ID , DRAIN CURRENT (A) 8 TJ = -55C 25C 125C VGS = 0V 3 1 6 0.1 TJ =125C 25C -55C 4 0.01 2 0 0.4 0.001 0.8 1.2 1.6 2 -VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8928A Rev. B Typical Electrical Characteristics: P-Channel (continued) 5 -V GS , GATE-SOURCE VOLTAGE (V) 3000 ID =-4.0A VDS = -5V CAPACITANCE (pF) 2000 1000 500 4 C iss -10V -15V 3 Coss 2 200 C rss 1 100 50 0.1 0 4 8 12 16 20 Q g , GATE CHARGE (nC) f = 1 MHz V GS = 0 V 0.2 0.5 1 2 5 10 20 -VDS , DRAIN TO SOURCE VOLTAGE (V) 0 Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 50 20 - ID , DRAIN CURRENT (A) 10 5 ) ON S( RD IT LIM 30 100 1m 10m s 10 0m s s us POWER (W) 25 20 15 10 5 0 0.01 SINGLE PULSE R JA =135 C/W TA = 25C 1 0.3 0.1 0.03 0.01 0.1 V GS = -4.5V SINGLE PULSE RJA = 135C/W TA = 25C A 0.2 0.5 1 2 1s 10s DC 0.1 0.5 10 50 100 300 5 10 20 30 50 SINGLE PULSE TIME (SEC) - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. FDS8928A Rev. B Typical Thermal Characteristics: N & P-Channel (continued) 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE R JA (t) = r(t) * R JA R JA =135C/W t1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t1 /t2 100 300 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design. FDS8928A Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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