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| BFP540F NPN Silicon RF Transistor * For highest gain low noise amplifier at 1.8 GHz * Outstanding Gms = 20 dB Noise Figure F = 0.9 dB * Gold metallization for high reliability * SIEGET to p v ie w 4 3 3 4 XYs 2 1 TSFP-4 45 - Line ATs 1 2 d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP540F Marking ATs* 1=B Pin Configuration 2=E 3=C 4=E - Package TSFP-4 * Pin configuration fixed relative to marking (see package picture) Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 80C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value 280 Unit K/W Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Value 4.5 14 14 1 80 8 250 150 -65 ... 150 -65 ... 150 mW C mA Unit V 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-28-2004 BFP540F Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 14 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V hFE 50 110 200 IEBO 10 A ICBO 100 nA ICES 10 A V(BR)CEO 4.5 5 V Symbol min. Values typ. max. Unit 2 Jan-28-2004 BFP540F Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 3 GHz Third order intercept point at output2) VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 21 - 30 0.14 0.3 0.6 0.24 - GHz pF Ccb Cce Ceb F dB 0.9 1.3 1.4 - G ma |S21e|2 15.5 IP 3 18 13 24.5 dBm 20 14.5 dB P-1dB - 11 - 3 Jan-28-2004 BFP540F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 82.84 28.383 3.19 19.705 1.172 1.3 1.8063 6.76 1 0.81969 2.324 0 3 aA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 107.5 0.48731 5.5 0.02 5.4 0.31111 0.8051 0.4219 0 0.30232 0 0 0.73234 A A V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1 11.15 1 19.237 0.72983 4 0.46576 0.23794 234 0.3 0.75 1.11 300 fA aA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CBC = CCE = KBO-EO = KBO-CO = KEO-CO = KCI-EI = KBI-CI = KEI-CI = RLBI = RLEI = RLCI = 0.42 0.22 0.26 0.28 0.35 0.22 34 2 33 0.1 0.01 0.11 -0.05 -0.08 0.2 0.15 0.11 0.13 nH nH nH nH pH nH fF fF fF The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both lead are combined in on electrical connection. RLxI are series resistors for the inductance LxI and Kxa-yb are the coupling coefficients between the inductance Lxa and Lyb. The referencepins for the couple ports are B, E, C, B, E, C. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes Valid up to 6GHz 4 Jan-28-2004 BFP540F Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 300 10 3 mW K/W 200 RthJS PTOT 150 10 2 100 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 50 0 0 15 30 45 60 75 90 105 120 C 150 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = (tp) 10 1 Collector-base capacitance Ccb= (VCB) f = 1MHz 0.3 Ptotmax / PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 CCB 10 0 -7 10 -6 -5 -4 -3 -2 0.2 0.15 0.1 0.05 10 10 10 10 10 s 10 0 0 0 2 4 6 8 10 V 14 tp VCB 5 Jan-28-2004 BFP540F Transition frequency fT= (IC) f = 1GHz VCE = Parameter in V 30 GHz Power gain Gma, Gms = (IC) VCE = 2V f = Parameter in GHz 30 dB 26 24 22 20 24 22 20 0.9GHz fT 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 mA 100 0.5V 1V 2V 3V to 4V G 18 16 14 12 10 8 6 4 2 0 10 20 30 40 50 60 70 2.4GHz 3GHz 4GHz 5GHz 6GHz 1.8GHz 80 mA 100 IC IC Power Gain Gma, Gms = (f), |S21| = f (f) Power gain Gma, Gms = (VCE) IC = 20mA f = Parameter in GHz 30 dB 26 24 22 20 1.8GHz 0.9GHz VCE = 2V, IC = 20mA 55 dB 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 GHz S|21e| G G 18 16 14 12 2.4GHz 3GHz 4GHz 5GHz 6GHz Gms Gma 10 8 6 4 6 2 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 f VCE 6 Jan-28-2004 |
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