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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 - JULY 94 FEATURES * 60 Volt VDS * RDS(on)= 0.33 * Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive
ZVN4306A
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25C Practical Continuous Drain Current at T amb =25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb =25C Practical Power Dissipation at T amb =25C* Operating and Storage Temperature Range SYMBOL V DS ID I DP I DM V GS P tot P totp T j :T stg VALUE 60 1.1 1.3 15 20 850 1.13 -55 to +150 UNIT V A A A V mW W C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 12 0.22 0.32 700 0.33 0.45 60 1.3 3 100 10 100 TYP. MAX. UNIT CONDITIONS. V V nA A A A mS I D =1mA, V GS =0V ID=1mA, V DS = V GS V GS = 20V, V DS =0V V DS =60V, V GS =0 V DS =48V, V GS =0V, T=125C(2) V DS =10V, V GS =10V V GS =10V,I D =3A V GS =5V, I D =1.5A V DS =25V,I D =3A
g fs
3-390
ZVN4306A
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. Coss Crss td(on) tr td(off) tf TYP. MAX. 350 140 30 8 25 30 16 UNIT pF pF pF ns ns ns ns VDD 25V, VGEN=10V, ID=3A VDS=25 V, VGS=0V, f=1MHz CONDITIONS. Input Capacitance (2) Ciss
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance:Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W
Max Power Dissipation - (Watts)
1.0
Thermal Resistance (C/W)
150 t1
D.C.
D=t1/tP
0.75
100
tP
D=0.6
Am tt en bi
0.50
em pe tu ra
50
D=0.2 D=0.1
0.25
re
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0 0.0001
D=0.05 Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature (C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-391
ZVN4306A
TYPICAL CHARACTERISTICS
12 11 7V
RDS(on)-Drain Source On Resistance ()
VGS= 20V 12V 10V 9V 8V
VGS=3V 10
3.5V
5V 6V
ID - Drain Current (Amps)
10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9
6V
1.0
5V
8V 10V
4V 3.5V 3V 10
0.1 0.1
1
10
100
VDS - Drain Source Voltage (Volts)
ID-Drain Current (Amps)
Saturation Characteristics
On-resistance v drain current
2.6
Normalised RDS(on) and VGS(th)
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25
ain Dr Re ce ur So eR nc ta sis
n) (o DS
gfs-Transconductance (S)
VGS=10V ID=3A
5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VDS=10V
VGS=VDS ID=1mA
Gate Threshold Voltage VGS(TH) 0 25 50 75 100 125 150 175 200 225
Tj-Junction Temperature (C)
ID(on)- Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature
Transconductance v drain current
VGS-Gate Source Voltage (Volts)
500 400 300 200 100 0 0 10 20 30 40 50 Ciss
16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 ID=3A
VDD= 20V 40V 60V
C-Capacitance (pF)
Coss Crss 60 70 80
9
10 11 12
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-392

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