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| PD 9.1695A PRELIMINARY l l l l IRL3202 HEXFET(R) Power MOSFET D Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching G VDSS = 20V RDS(on) = 0.016W S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. ID = 48A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 48 30 190 69 0.56 10 14 270 29 6.9 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V mJ A mJ V/ns C Thermal Resistance Parameter RqJC RqCS RqJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 1.8 --- 62 Units C/W 11/18/97 IRL3202 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.70 28 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.029 --- --- --- --- --- --- --- --- --- --- --- 9.8 100 63 82 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.019 VGS = 4.5V, ID = 29A W 0.016 VGS = 7.0V, ID = 29A --- V VDS = VGS, ID = 250A --- S VDS = 16V, ID = 29A 25 VDS = 20V, VGS = 0V A 250 VDS = 10V, VGS = 0V, TJ = 150C 100 VGS = 10V nA -100 VGS = -10V 43 ID = 29A 12 nC VDS = 16V 13 VGS = 4.5V, See Fig. 6 --- VDD = 10V --- ID = 29A ns --- RG = 9.5W VGS = 4.5V , --- RD = 0.3W , Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 2000 --- VGS = 0V 800 --- pF VDS = 15V 290 --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS I SM V SD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 48 --- --- showing the A G integral reverse --- --- 190 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 29A, VGS = 0V --- 68 100 ns TJ = 25C, IF = 29A --- 130 190 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. I 29A, di/dt 63A/s, VDD V(BR)DSS, SD TJ 150C Starting TJ = 25C, L = 0.64mH RG = 25W , IAS = 29A. Pulse width 300s; duty cycle 2%. IRL3202 1000 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V BOTTOM 2.00V BOTTOM 1.75V TOP 1000 100 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V BOTTOM 2.00V BOTTOM 1.75V TOP 100 10 2.0V 2.0V 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 48A I D , Drain-to-Source Current (A) 1.5 100 TJ = 150 C 1.0 10 0.5 1 2 3 V DS = 15V 20s PULSE WIDTH 4 5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRL3202 3500 3000 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 15 ID = 29A VDS = 16V 12 C, Capacitance (pF) 2500 Ciss 2000 9 1500 Coss 1000 6 3 500 Crss 0 1 10 100 0 0 10 20 30 40 50 60 70 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 I D , Drain Current (A) 100 TJ = 150 C 100us 1ms 10 TJ = 25 C 10 10ms 1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 1 TC = 25 C TJ = 150 C Single Pulse 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRL3202 EAS , Single Pulse Avalanche Energy (mJ) 50 600 TOP 500 40 BOTTOM ID 13A 18A 29A I D , Drain Current (A) 400 30 300 20 200 10 100 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting T , Junction Temperature( C) J Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRL3202 R DS (on) , Drain-to-Source On Resistance(W) RDS(on), Drain-to-Source On Resistance ( W ) 0.018 0.025 0.016 VGS = 4.5V 0.020 0.014 VGS = 7.0V 0.012 ID = 48A 0.015 0.010 0 10 20 30 40 50 60 0.010 0.0 2.0 4.0 6.0 8.0 A I D , Drain Current (A) V G S , Gate-to-Source V oltage (V ) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage IRL3202 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) -A 6.47 (.255) 6.10 (.240) -B4.69 (.185 ) 4.20 (.165 ) 1.32 (.052) 1.22 (.048) 4 15.24 (.60 0) 14.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14.09 (.55 5) 13.47 (.53 0) 4.06 (.160) 3.55 (.140) 3X 3X 1 .40 (.0 55) 1 .15 (.0 45) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NO TES: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H 2.92 (.115) 2.64 (.104) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y LOT CO DE 9B1M A IN TE R N A T IO N A L R E C T IF IE R LO GO ASSEMBLY LOT CODE PART NUMBER IR F 1 0 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97 |
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