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| PD - 93804B Applications l High frequency DC-DC converters HEXFET(R) Power MOSFET IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D VDSS RDS(on) max Benefits l l ID 41A l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current 150V 0.045: TO-220AB TO-220 FullPak D2Pak TO-262 IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Absolute Maximum Ratings Parameter ID @ TC = 25C IDM PD @TA = 25C PD @TC = 25C PD @TC = 25C Continuous Drain Current, VGS @ 10V Pulsed Drain Current ID @ TC = 100C Continuous Drain Current, VGS @ 10V Max. 41 29 164 3.1 200 48 1.3 0.32 30 2.7 -55 to + 175 Units A W c Power Dissipation, D Pak Power Dissipation, TO-220 Power Dissipation, Fullpak Linear Derating Factor, TO-220 Linear Derating Factor, Fullpak 2 W/C V V/ns C VGS dv/dt TJ TSTG Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and e Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 1.1(10) N*m (lbf*in) Thermal Resistance Parameter RJC RJC Rcs RJA RJA RJA Junction-to-Case Junction-to-Case, Fullpak Case-to-Sink, Flat, Greased Surface Typ. --- --- 0.50 --- --- --- Max. 0.75 3.14 --- 62 40 65 Units C/W h Junction-to-Ambient, D Pak i Junction-to-Ambient, TO-220 2 h Junction-to-Ambient, Fullpak Notes through are on page 12 www.irf.com 1 07/16/03 IRFB/IRFIB/IRFS/IRFSL41N15D Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 150 --- --- 3.0 --- --- --- --- --- 0.17 --- --- --- --- --- --- --- --- 0.045 5.5 25 250 100 -100 nA V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 25A f V A VDS = VGS, ID = 250A VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 150C VGS = 30V VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) Parameter gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Parameter EAS IAR EAR Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy Min. Typ. Max. Units 18 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 72 21 35 16 63 25 14 2520 510 110 3090 230 250 --- 110 31 52 --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- pF ns nC S Conditions VDS = 50V, ID = 25A ID = 25A VDS = 120V VGS = 10V VDD = 75V ID = 25A RG = 2.5 VGS = 10V VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 120V, = 1.0MHz VGS = 0V, VDS = 0V to 120V Max. 470 25 20 f f g Avalanche Characteristics Units mJ A mJ --- --- --- --- --- --- --- --- 170 1.3 Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units 41 A 164 1.3 260 1.9 V ns C Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V TJ = 25C, IF = 25A f di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f 2 www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15D 1000 VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 1000 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 100 100 10 10 6.0V 6.0V 1 0.1 1 20s PULSE WIDTH TJ = 25 C 10 100 1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 41A I D , Drain-to-Source Current (A) 2.5 100 2.0 TJ = 175 C 1.5 TJ = 25 C 10 1.0 0.5 1 6 7 8 V DS = 25V 20s PULSE WIDTH 9 10 11 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRFB/IRFIB/IRFS/IRFSL41N15D 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds Crss = C gd Coss = C ds + Cgd 20 ID = 25A VDS = 120V VDS = 75V VDS = 30V VGS , Gate-to-Source Voltage (V) SHORTED 16 10000 C, Capacitance(pF) Ciss 1000 12 Coss 100 8 Crss 4 10 1 10 100 1000 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGURE 13 80 100 120 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 C I D , Drain Current (A) 100 100 10us 10 100us TJ = 25 C 1 10 1ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 1 TC = 25 C TJ = 175 C Single Pulse 1 10 100 10ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15D 50 V DS VGS RD 40 ID , Drain Current (A) RG VGS Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -VDD 30 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 PDM t1 t2 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB/IRFIB/IRFS/IRFSL41N15D 1200 15V EAS , Single Pulse Avalanche Energy (mJ) TOP TOP 1000 BOTTOM ID ID 7.3A 10A 13A 21A 18A VDS L DRIVER BOTTOM 25A 800 RG VGS 20V D.U.T IAS tp + V - DD A 600 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15D Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFB/IRFIB/IRFS/IRFSL41N15D TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) Dimensions are shown in millimeters (inches) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO LOT CODE PART NUMBER DATE CODE 8 www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15D TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) o 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 7.10 (.280) 6.70 (.263) 16.00 (.630) 15.80 (.622) 1.15 (.045) MIN. 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982 2 CONTROLLING DIMENSION: INCH. 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 3X 1.40 (.055) 1.05 (.042) 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) 2.54 (.100) 2X M AM B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) MINIMUM CREEPAGE DISTANCE BETWEEN A-B-C-D = 4.80 (.189) TO-220 Full-Pak Part Marking Information Notes: This part marking information applies to all devices produced before 02/26/2001 and currently for parts manufactured in GB. EXAMPLE: T HIS IS AN IRFI840G WITH ASS EMBLY LOT CODE E401 INT ERNATIONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER IRF I840G E401 9245 DATE CODE (YYWW) YY = YEAR WW = WEEK Notes : T his part marking information applies to devices produced after 02/26/2001 in location other than GB. EXAMPLE: THIS IS AN IRFI840G WITH AS SEMBLY LOT CODE 3432 AS SEMBLED ON WW 24 1999 IN THE AS SEMBLY LINE "K" INTERNATIONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER IRFI840G 924K 34 32 DAT E CODE YEAR 9 = 1999 WEEK 24 LINE K www.irf.com 9 IRFB/IRFIB/IRFS/IRFSL41N15D D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L 10 www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15D TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com 11 IRFB/IRFIB/IRFS/IRFSL41N15D D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.5mH, RG = 25, IAS = 25A. ISD 25A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS This is only applied to TO-220AB package. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. TO-220AB & TO-220 FullPak packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/03 12 www.irf.com |
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