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| CMPD1001 CMPD1001A CMPD1001S HIGH CURRENT SWITCHING DIODE Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001S CMPD1001A SINGLE DUAL, IN SERIES DUAL, COMMON ANODE MARKING CODE: L20 MARKING CODE: L21 MARKING CODE: L22 MAXIMUM RATINGS (TA=25oC) SYMBOL VR IF IFRM IRRM IFSM IFSM PD TJ,Tstg JA UNITS V mA mA mA mA mA mW oC oC/W Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Forward Surge Current, tp=1 s Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 90 250 600 600 6000 1000 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL BVR IR IR VF TEST CONDITIONS IR=100 A VR=90V VR=90V, TA=150oC IF=10mA MIN 90 MAX 100 100 0.75 UNIT V nA A V 130 SYMBOL VF VF VF VF CT trr TEST CONDITIONS MIN IF=50mA IF=100mA IF=200mA IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 3.0mA, RL=100 MAX 0.84 0.90 1.00 1.25 35 50 UNIT V V V V pF ns All dimensions in inches (mm). NO CONNECTION A C1 A2 C1 C2 C CMPD1001 A1, C2 CMPD1001S A1, A2 CMPD1001A R2 131 |
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