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| APM3023ND N-Channel Enhancement Mode MOSFET Features * 30V/7A, RDS(ON)=15m(typ.) @ VGS=10V RDS(ON)=22m(typ.) @ VGS=5V Pin Description G D S * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-89 (2) D Applications * * Switching Regulators Switching Converters (1) G S (3) N-Channel MOSFET Ordering and Marking Information APM 3023N L e a d F re e C o d e H a n d lin g C o d e T em p. R ange P ackage C ode P ackage C ode D : S O T -8 9 O p e r a tin g J u n c tio n T e m p . R a n g e C : - 5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube TR : Tape & Reel L e a d F re e C o d e L : L e a d F r e e D e v ic e B la n k : O r ig in a l D e v ic e APM 3023N D: APM 3023 XXXXX X X X X X - D a te C o d e Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1 www.anpec.com.tw APM3023ND Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA* Note: *Surface Mounted on 1in pad area, t 10sec. 2 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation for Single Operation Thermal Resistance-Junction to Ambient TA=25C TA=100C VGS=10V Rating 30 20 7 28 2 150 -55 to 150 1.47 0.58 85 Unit V A A C W C/W Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM3023ND Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=250A VDS=24V, VGS=0V T J=85C VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=7A VGS=5V, IDS=5A ISD=1.5A, VGS=0V 30 1 30 1 1.5 15 22 0.8 2 100 20 28 1.3 V A V nA m V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Gate Charge Characteristics b Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=15V, VGS=10V, IDS=7A 30 5.8 3.8 39 nC Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 2 www.anpec.com.tw APM3023ND Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25C unless otherwise noted) Test Condition APM3023ND Min. Typ. Max. Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz 2.5 830 145 15 11 18 26 54 30 17 37 20 pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 ns a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 3 www.anpec.com.tw APM3023ND Typical Characteristics Power Dissipation 1.6 1.4 1.2 8 7 6 Drain Current Ptot - Power (W) ID - Drain Current (A) 1.0 0.8 0.6 0.4 0.2 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o 5 4 3 2 1 0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (C) Tj - Junction Temperature Safe Operation Area Normalized Transient Thermal Resistance 50 im it Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 10 ID - Drain Current (A) Rd s( on )L 300us 1ms 0.1 0.02 0.01 0.05 1 10ms 100ms 0.1 1s DC 0.01 Single Pulse TA=25 C 0.01 0.01 0.1 o 1 10 100 1E-3 1E-4 1E-3 0.01 Mounted on 1in pad o RJA :85 C/W 2 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 4 www.anpec.com.tw APM3023ND Typical Characteristics (Cont.) Output Characteristics 28 VGS=5, 6, 7, 8, 9, 10V 24 35 40 Drain-Source On Resistance RDS(ON) - On - Resistance (m) ID - Drain Current (A) 20 16 12 8 4 3V 0 30 25 20 15 10 5 0 VGS=10V VGS=5V 4V 0 2 4 6 8 10 0 4 8 12 16 20 24 28 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 28 24 Gate Threshold Voltage 1.6 IDS =250A 1.4 Normalized Threshold Voltage 5 ID - Drain Current (A) 20 16 12 8 4 0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 Tj=125 C Tj=25 C o o Tj=-55 C o 0 1 2 3 4 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 5 www.anpec.com.tw APM3023ND Typical Characteristics (Cont.) Drain-Source On Resistance 2.0 VGS = 10V 1.8 IDS = 7A 10 o Source-Drain Diode Forward 30 Normalized On Resistance 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 15m 0 25 50 75 100 125 150 o IS - Source Current (A) 1.4 Tj=150 C Tj=25 C o 1 0.3 0.0 0.4 0.8 1.2 1.6 2.0 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 1400 Frequency=1MHz Gate Charge 10 VDS=15V 9 I = 7A D 1200 VGS - Gate-source Voltage (V) 30 8 7 6 5 4 3 2 1 C - Capacitance (pF) 1000 Ciss 800 600 400 200 Crss 0 0 5 10 15 20 25 Coss 0 0 5 10 15 20 25 30 VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 6 www.anpec.com.tw APM3023ND Package Information SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62) D D1 a E H 1 2 3 L B1 B e e1 C A a D im A B B1 C D D1 e e1 E H L M illim eters M in. 1.40 0.40 0.35 0.35 4.40 1.35 1.50 B SC 3.00 B SC 2.29 3.75 0.80 2.60 4.25 1.20 10 0.090 0.148 0.031 M ax. 1.60 0.56 0.48 0.44 4.60 1.83 M in. 0.055 0.016 0.014 0.014 0.173 0.053 Inches M ax. 0.063 0.022 0.019 0.017 0.181 0.072 0.059 BSC 0.118 B SC 0.102 0.167 0.047 10 Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 7 www.anpec.com.tw APM3023ND Package Information SOT-223( Reference JEDEC Registration SOT-223) D B1 A c a H E L K e e1 b A1 B Dim A A1 B B1 c D E e e1 H L K Min. 1.50 0.02 0.60 2.90 0.28 6.30 3.30 Millimeters Max. 1.80 0.08 0.80 3.10 0.32 6.70 3.70 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0 13 8 Inches Min. 0.06 0.02 0.11 0.01 0.25 0.13 0.09 BSC 0.18 BSC 7.30 1.10 2.00 10 0.26 0.04 0.06 0 13 www.anpec.com.tw Max. 0.07 0.03 0.12 0.01 0.26 0.15 0.29 0.04 0.08 10 Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 APM3023ND Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP R am p-up tp C ritical Zone T L to T P T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 9 www.anpec.com.tw APM3023ND Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 10 www.anpec.com.tw APM3023ND Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 3301 B 621.5 D 1.5+ 0.1 SOT-223 F 5.5 0.05 C 12.75 0.15 D1 1.5+ 0.1 J 2 0.6 Po T1 12.4 +0.2 P1 T2 2 0.2 Ao W 12 0.3 Bo 7.5 0.1 P 8 0.1 Ko 2.1 0.1 E 1.75 0.1 t 0.30.05 4.0 0.1 2.0 0.05 6.9 0.1 (mm) Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOT-223 12 9.3 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 11 www.anpec.com.tw |
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