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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2002.03.06 Page No. : 1/4 HE8051S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051S is designed for general purpose amplifier applications. Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 625 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ......................................................................................... 25 V VCEO Collector to Emitter Voltage ...................................................................................... 20 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current ....................................................................................................... 700 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Cob Min. 25 20 5 100 150 Typ. 140 Max. 1 100 0.5 1 500 10 Unit V V V uA nA V V Test Conditions IC=10uA IC=1mA IE=10uA VCB=20V VEB=6V IC=0.5A, IB=50mA VCE=1V, IC=150mA VCE=1V, IC=150mA VCE=1V, IC=500mA VCE=10V, IC=20mA, f=100MHz VCB=10V, f=1MHz, IE=0 MHz pF *Pulse Test: Pulse Width 380us, Duty Cycle2% Classification Of hFE Rank hFE1 hFE2 C 100-180 C1 100-180 >100 D 160-300 D1 160-300 >100 E 250-500 - HE8051S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 VCE(sat) @ IC=10IB 125 C 75 C o o Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2002.03.06 Page No. : 2/4 Saturation Voltage & Collector Current Saturation Voltage (mV) 100 75 C o hFE 25 C o 125 C 10 25 C o o hFE @ VCE=1V 100 1 10 100 1000 1 0.1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 1000 100 Capacitance & Reverse-Biased Voltage 25 C o ON Voltage (mV) 75 C Capacitance (pF) o 125 C o 10 Cob VBE(ON) @ VCE=1V 100 0.1 1 10 100 1000 1 0.1 1 10 100 Collector Current-IC (mA) Reverse-Biased Voltage (V) Cutoff Frequency & Collector Current 1000 10000 PT=1ms Safe Operating Area Collector Current-IC (mA) PT=100ms 1000 PT=1s 100 Cutoff Frequency (MHz).. . VCE=10V 100 10 10 1 10 100 1000 1 1 10 100 Collector Current (mA) Forward Voltage-VCE (V) HE8051S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2002.03.06 Page No. : 3/4 PD-Ta 700 600 Power Dissipation-PD (mW) 500 400 300 200 100 0 0 50 100 o 150 200 Ambient Temperature-Ta ( C) HE8051S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Date Code Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2002.03.06 Page No. : 4/4 2 Marking: H E 8051S Rank Control Code 3 C Style: Pin 1.Emitter 2.Base 3.Collector D H I E F G 1 3-Lead TO-92 Plastic Package HSMC Package Code: A *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HE8051S HSMC Product Specification |
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