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| Advance Product Information July 20, 2005 X-band Ultra Low Noise Amplifier Key Features * * * * * * * * TGA2600 Product Description The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 GHz with a typical mid-band noise figure of 0.7 dB. The device features 30dB of gain across the band, while providing a nominal output power at P1dB gain compression of 2 dBm. Typical input and output return loss is 12 dB. Ground is provided to the circuitry through vias to the backside metallization. The TGA2600-EPU LNA is suitable for a variety of C and X band applications such as radar receivers, electronic counter measures,decoys, jammers, and phased array systems. The TGA2600-EPU is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-free and RoHS compliant. Frequency Range: 6-12 GHz 0.7 dB Noise Figure 30 dB Nominal Gain 2 dBm Nominal P1dB > 12 dB Return Loss Nominal Bias 2.5V @ 17 mA 0.15-um 3MI mHEMT Technology Chip Dimensions: 2.20 x 0.99 x 0.10 mm (0.087 x 0.039 x 0.004 in) Radar X band LNA, ECM Measured Fixtured Data Primary Applications * * Bias Conditions: Vd = 2.5V, Id= 17mA 1.4 1.2 Noise Figure (dB) 1 0.8 0.6 0.4 0.2 0 6 7 8 9 10 11 12 13 14 15 16 Frequency (GHz) 42 36 30 24 18 12 6 0 -6 -12 -18 -24 -30 2 4 Output Input 6 8 10 12 14 16 18 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Return Loss (dB) Gain 42 36 30 24 18 12 6 0 -6 -12 -18 -24 -30 Gain (dB) Advance Product Information July 20, 2005 TGA2600-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL V + PARAMETER Positive Supply Voltage Gate Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature Storage Temperature VALUE 4.5 V -2V to +1 V 50 mA 2 mA TBD 0.23 W 110 C 175 C -65 to 110C NOTES 2/ Vg I+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 2/ 2/ 2/, 3/ 4/, 5/ These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 C, the median life is greater than 1 E+6 hours. Junction operating temperature will directly affect the device median time to failure (T M). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 5/ 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU TABLE II RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) Vd = 2.5V, Id = 17 mA SYMBOL Gain IRL ORL NF PARAMETER Small Signal Gain Input Return Loss Output Return Loss Noise Figure Output Power @ 1dB Gain Compression Output Third Order Intercept TEST CONDITION f = 7-11 GHz f = 7-11 GHz f = 7-11 GHz f = 7-11 GHz f = 7-11 GHz NOMINAL 30 12 12 0.7 2 UNITS dB dB dB dB dBm P1dB f = 7-11 GHz 14 dBm TOI TABLE III THERMAL INFORMATION* Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 2.5 V ID = 16 mA Pdiss = 0.04 W TCH (oC) 73 RTJC (qC/W) 75 TM (HRS) > 1 E+6 Note: Assumes epoxy mounted at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Measured Fixtured Data Bias Conditions: Vd = 2.5V, Id= 17mA 1.4 1.2 Noise Figure (dB) 1 0.8 0.6 0.4 0.2 0 6 7 8 9 10 11 12 13 14 15 16 Frequency (GHz) 2 1.8 1.6 Noise Figure (dB) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 5 6 7 8 9 Id = 17mA Id = 10mA Id = 8mA Id = 5mA 10 11 12 13 Frequency (GHz) 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information Measured Fixtured Data Bias Conditions: Vd = 2.5V, Id= 17mA 42 36 30 24 18 12 6 0 -6 -12 -18 -24 -30 2 4 42 36 30 24 18 12 6 0 -6 -12 -18 -24 -30 14 16 18 July 20, 2005 TGA2600-EPU Output Input 6 8 10 12 Frequency (GHz) 33 32 31 Gain (dB) 30 29 28 27 26 25 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 7 GHz 9 GHz 11 GHz Pout (dBm) 3.5 3 Output P1dB (dBm) 2.5 2 1.5 1 0.5 0 6 7 8 9 10 11 12 Frequency (GHz) Return Loss (dB) Gain Gain (dB) 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Measured Fixtured Data Bias Conditions: Vd = 2.5V, Id= 17mA 18 17 Output TOI (dBm) 16 15 14 13 12 11 10 6 7 8 9 10 11 12 Frequency (GHz) 60 58 56 54 52 50 48 46 44 42 40 -19 -17 -15 -13 -11 -9 -7 7 GHz 9 GHz 11 GHz IMD3 (dBc) Output Power Per Tone (dBm) 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Mechanical Characteristics ! ! A ' " (( A"( (&A"% "& A $ "!&A " '(A# A A ' " A " ! # A ' " ! ! ! A ' & Vv)AAvyyvrrAvpur Uuvpxr)A A# 8uvArqtrAAiqAhqAqvrvAhrAuAAprrAsAiqAhq 8uvAvrAyrhpr)AAA$ A! BI9ADTA768FTD9@APAAHHD8 AA 7qAhqAAE AAAAASAADAAAAAAAAA&$AA $A"AA% 7qAhqAAE!AAAAAWqAAAAAAAAAAAAA&$AA&$A"AA" 7qAhqAAE"AAAAASAAPAAAAAA&$AA $A"AA% 7qAhqAAE#AAAAAWt AAAAAAAAAAA&$AA&$A"AA" GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Recommended Assembly Diagram 9G S) 5) ,1 5) 287 S) 9J GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 20, 2005 TGA2600-EPU Assembly Process Notes Assembly notes: * * * Use conductive epoxy with limited exposure to temperatures at or above 175 C. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 150 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com |
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