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SD57120
RF POWER TRANSISTORS The LdmoST FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
* EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION, PUSH-PULL * POUT = 120 W WITH 13 dB gain @ 960 MHz * BeO FREE PACKAGE * INTERNAL INPUT MATCHING
ORDER CODE SD57120 M252 epoxy sealed BRANDING TSD57120
DESCRIPTION The SD57120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring high linearity.
PIN CONNECTION
1 2
3 5 4
1. Drain 2. Drain 3. Source
4. Gate 5. Gate
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 20 14 236 200 -65 to +150 Unit V V A W C C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 0.55 C/W
March, 24 2003
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SD57120
ELECTRICAL SPECIFICATION (TCASE = 25 C) STATIC (Per Section)
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 10 mA VDS = 28 V VDS = 0 V ID = 100 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 0.7 3 169 48 2.7 Min. 65 1 1 5.0 0.9 Typ. Max. Unit V A A V V mho pF pF pF
* Includes Internal Input Moscap.
DYNAMIC
Symbol POUT GPS D Load mismatch VDD = 28 V VDD = 28 V VDD = 28 V Test Conditions IDQ = 800 mA IDQ = 800 mA IDQ = 800 mA POUT = 120 W POUT = 120 W POUT = 120 W f = 960 MHz f = 960 MHz f = 960 MHz f = 960 MHz Min. 120 13 50 10:1 14 Typ. Max. Unit W dB % VSWR
VDD = 28 V IDQ = 800 mA ALL PHASE ANGLES
IMPEDANCE DATA D ZDL
Typical Input Impedance G Zin
Typical Drain Load Impedance
S
FREQ. 945 MHz 960 MHz 980 MHz ZIN () 3.9 + j 4.9 4.1 + j 4.6 3.9 + j 5.2 ZDL() 3.26 - j 5.1 3.24 - j 4.74 3.27 - j 6.9
Measured gate and drain to drain respectively. 2/8
SD57120
TYPICAL PERFORMANCE Output Power and Efficiency vs. Input Power Power Gain vs. Output Power
160
Pout
80 70
18
140 Pout, OUTPUT POWER (W) 120
Nd
17
Nd, DRAIN EFFICIENCY (%)
Idq= 1200mA
Gp, POWER GAIN (dB)
60 50 40 30
f= 960MHz Idq= 800mA Vdd= 28V
16
100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 Pin, INPUT POWER (W)
Idq= 800mA
f= 960MHz Vdd= 28V
15
Idq= 400mA
14
Idq= 200mA
20 10 0
13
12 1 10 100 1000 Pout, OUTPUT POWER (W)
Intermodulation Distortion vs. Output Power
Intermodulation Distortion vs. Output Power
-30
IMD3
-35 -40 -45
IMD7 IMD5
Vdd= 28V Idq= 800mA f1= 960MHz f2= 960.1MHz Pin= 2.5WPEP
IMD3, INTERMODULATION DISTORSION (dBc)
IMD, INTERMODULATION DISTORSION (dBc)
-25
-25
Vdd= 28V Idq= 800mA f1= 960MHz f2= 960.1MHz Pin= 2.5WPEP
Idq= 200mA
-30
Idq= 1200mA
-35
-40
Idq= 800mA Idq= 400mA
-50 -55 10 100
Pout, OUTPUT POWER (WPEP)
-45 10 100 Pout, OUTPUT POWER (WPEP) 1000
1000
Output Power vs. Gate Voltage
Output Power vs. Drain Voltage
200
160
Pin= 6W
Pout, OUTPUT POWER (W)
140 Pout, OUTPUT POWER (W)
150
f= 960MHz Idq= 800mA
120
Pin= 4.8W
100
100
80
f= 960MHz Pin= 4.8W Vdd= 28V
Pin= 2.4W
50
60
40 0 1 2 3 4 5 6 Vgs, GATE-SOURCE VOLTAGE (V)
0 10 15 20 25 30 35 Vdd, DRAIN VOLTAGE (V)
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SD57120
TYPICAL PERFORMANCE Capacitance vs. Drain Voltage Drain Current vs. Gate Voltage
1000
f= 1MHz Ciss
9 8
Vds= 10V
7 Id, DRAIN CURRENT (A) 6 5 4 3 2 1
C, CAPACITANCE (pF)
100
Coss
10
Crss
Ciss includesinput matching capacitors
1 0 4 8 12 16 20 24 28 Vds, DRAIN SOURCE VOLTAGE (V)
0 0 1 2 3 4 5 6 Vgs, GATE-SOURCE VOLTAGE (V)
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SD57120
960 MHz Test Circuit Schematic
TL1 TL2
DIMENSION TABLE
DIM WxL (in) 0.084xTYP 0.250x0.400 0.250x0.450 0.450x0.608 0.430x0.801 0.252x0.525 0.084x2.2 WxL (mm) 2.13xTYP 6.34x10.16 6.34x11.43 11.43x15.44 10.92x20.34 6.40x13.34 2.13x55.88 Z1, Z12
Z7 Z3 Z1 Z5
Z9 Z11 Z12
Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 TL1, TL2
Z2
Z4 Z6 Z8
Z10
TRANSMISSON LINE DIMENSIONS
VGG +
R6 FB4
FB3
FB6
VDD
R5
C23
C22
C21
C20
C30
C31
C32
C33
C34
C35
L2 C9 TL1 R2 C2 Z3 C4 Z5 Z7 C7 Z9
L4 BALUN2
Z11
C15
RF INPUT
Z1 C1 Z2 C3 Z4
C5 Z6
D.U.T.
C10
C11
C12
C13
Z12
RF OUTPUT
R1
C6
Z8
Z10 C14 TL2
L1 BALUN1
C8 L3
VGG +
R4
FB2
FB1
FB5
VDD
R3
C19
C18
C17
C16
C24
C25
C26
C27
C28
C29
NOTES: 1. GAP BETWEEN GROUND E TRANSMISSION LINE = 0.056 [1.42] TYP; 2. COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 3. DIMENSION OF MICROSTRIP = 1/2 PRINTED BALUN ONLY.
Ref. 7160637
960 MHz Test Circuit Component Part List
COMPONENT BF1-BF4 L1,L2,L3,L4 B1, B2 R1,R2 R3,R5 R4,R6 C1,C2,C14,C15 C3,C4 C5,C12 C6,C7,C11 C8,C9 C10,C13 C16,C17,C20,C21,C24,C25,C30,C31 C18,C22 C19,C23,C27,C28,C32,C34 C26,C33 C29,C35 BOARD DESCRIPTION SURFACE MOUNT EMI SHIELD BEAD INDUCTOR, 3 TURN AIR-WOUND #20AWG ID=0.126[3.20] 24.7nH MAGNET WIRE BALUN, 50 OHM SUCOFORM, OD 0.141. 2.20 LG COAXIAL CABLE OR EQUIVALENT 75 OHM 1 W SURFACE MOUNT CHIP RESISTOR 1.2 K OHM 1 W SURFACE MOUNT CHIP RESISTOR 1 K OHM 1 W SURFACE MOUNT CHIP RESISTOR 47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 42 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8 pF GIGATRIM VARIABLE CAPACITOR 1.7 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 5.6 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.6-4.5 pF GIGATRIM VARIABLE CAPACITOR 300 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10000 pF ATC 200B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 F, 50 V ALUMINUM ELECTROLYTICS RADIAL LEAD CAPACITOR 20000 pF ATC 900B SURFACE MOUNT CERAMIC CHIP CAPACITOR 220 F, 50 V ALUMINUM ELECTROLYTICS RADIAL LEAD CAPACITOR ULTRA LAM 2000. 0.030" THK, r = 2.55, 2 OZ ED CU BOTH SIDES
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SD57120
960 MHz Production Test Fixture
960 MHz Test Circuit Photomaster
6.4 inches
4 inches
Ref. 7160637
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SD57120 M252 (.400 x .860 4L BAL N/HERM W/FLG) MECHANICAL DATA
mm Inch MAX 8.64 10.80 3.00 9.65 2.16 21.97 27.94 33.91 0.10 1.52 2.36 4.57 9.96 21.64 34.16 0.15 1.78 2.74 5.33 10.34 22.05 1.335 .004 .060 .093 .180 .392 .852 3.30 9.91 2.92 22.23 .118 .380 .085 .865 1.100 1.345 .006 .070 .108 .210 .407 .868 MIN. .320 .425 .130 .390 .115 .875 TYP. MAX .340
DIM.
A B C D E F G H I J K L M N
MIN. 8.13
TYP.
Controlling dimension: Inches 1022783C
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SD57120
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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