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NTE2395 MOSFET N-Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Gate-to-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6-32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W Note Note Note Note 1. 2. 3. 4. Current limited by the package, (Die Current = 51A). Repetitive rating; pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = +25C, L = 44H, RG = 25, IAS = 51A ISD 51A, di/dt 250A/s, VDD V(BR)DSS, TJ +175C
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250A Min 60 - - 2.0 15 - - - - - - - VDD = 30V, ID = 51A, RG = 9.1, RD = 0.55, Note 5 - - - - Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz - - - - - Typ - 0.060 - - - - - - - - - - 14 110 45 92 4.5 7.5 1900 920 170 Max - - 0.028 4.0 - 25 250 100 -100 67 18 25 - - - - - - - - - Unit V V/C V mhos A A nA nA nC nC nC ns ns ns ns nH nH pF pF pF
V(BR)DSS Reference to +25C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss VGS = 10V, ID = 31A, Note 5 VDS = VGS, ID = 250A VDS = 25V, ID = 31A, Note 5 VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = +125C VGS = 20V VGS = -20V ID = 51A, VDS = 48V, VGS = 10V, Note 5
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capaticance
Source-Drain Ratings and Characteristics:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Symbol IS ISM VSD trr Qrr ton Note 1 Note 2 TJ = +25C, IS = 51A, VGS = 0V, Note 5 TJ = +25C, IF = 51A, di/dt = 100A/s, Note 5 Test Conditions Min - - - - - Typ - - - 120 0.53 Max 50 200 2.5 180 0.80 Unit A A V ns C
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Note 1. Current limited by the package, (Die Current = 51A). Note 2. Repetitive rating; pulse width limited by maximum junction temperature. Note 5. Pulse width 300s; duty cycle 2%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab

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