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Advanced Technical Information
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTK 200N10P
VDSS ID25
RDS(on)
= 100 V = 200 A = 7.5 m
Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M
Maximum Ratings 100 100 20 V V V A A A A mJ J V/ns W C C C C
TO-264(SP) (IXTK)
TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
200 75 400 60 100 4 10 800 -55 ... +175 175 -55 ... +150
G
D
(TAB) S
G = Gate S = Source
D = Drain TAB = Drain
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density
1.6 mm (0.062 in.) from case for 10 s Mounting torque 10
300
1.13/10 Nm/lb.in. g
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150C
Characteristic Values Min. Typ. Max. 100 2.5 5.0 200 25 250 7.5 5.5 V V nA A A m m
VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t 300 s, duty cycle d 2 %
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99186(05/04)
(c) 2004 IXYS All rights reserved
IXTK 200N10P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 60 97 7600 VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 860 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 35 150 90 240 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 135 S pF pF pF ns ns ns ns nC nC nC 0.18 K/W 0.15 K/W TO-264(SP) Outline (IXTK)
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 200 400 1.5 120 3.3 A A V ns C
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585
IXTK 200N10P
Fig. 1. Output Characteristics @ 25C
200 175 150 VGS = 10V 9V 350 VGS = 10V 300 250 8V 9V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
125 100 75 50 25 0 0 0.2 0.4 0.6 0.8 1
I D - Amperes
200 150 100
8V
7V
7V
6V
50 0 1.2 1.4 1.6 0 0.5 1 1.5
6V
V D S - Volts Fig. 3. Output Characteristics @ 150C
200 175 150 VGS = 10V 9V 8V 2.4 2.2 VGS = 10V
V D S - Volts
2
2.5
3
3.5
4
4.5
5
Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 100A I D = 200A
I D - Amperes
125 100 75 50 25 0 0 0.5 1 6V 7V
5V
V D S - Volts
1.5
2
2.5
3
3.5
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
80 70 TJ = 175C 60
Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
2.4 2.2
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 50 100 VGS = 15V
I D - Amperes
50 40 30 20 10 0
VGS = 10V
TJ = 25C 150 200 250 300 350
-50
-25
0
25
50
75
100
125
150
175
I D - Amperes
TC - Degrees Centigrade
(c) 2004 IXYS All rights reserved
IXTK 200N10P
Fig. 7. Input Adm ittance
300 140 120 100
Fig. 8. Transconductance
250
g f s - Siemens
I D - Amperes
200
TJ = -40C 80 60 40 20 0 25C 150C
150 TJ = -40C 25C 50 150C
100
0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
0
50
100
150
200
250
300
350
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
350 300 250 10 9 8 7 VDS = 50V I D = 100A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6
200 150 100 50 0
6 5 4 3 2 1 0
V S D - Volts
0
25
50
Q G - nanoCoulombs
75
100 125 150 175 200 225 250
Fig. 11. Capacitance
100,000 f = 1MHz 1000
Fig. 12. Forw ard-Bias Safe Operating Area
R DS(on) Limit TJ = 175C TC = 25C
Capacitance - picoFarads
10,000
I D - Amperes
C iss C oss
100s
100
1ms 10ms DC
1,000
C rss
100 0 5 10 15 20 25 30 35 40
10
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
V D S - Volts
100
1000
IXTK 200N10P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - C / W
0.10
0.01
0.00 0.1 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2004 IXYS All rights reserved

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