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| PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q q Surface Mountable UltraFast CoPack IGBT C q q q q q UltraFast IGBT optimized for high switching frequencies n-channel IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low gate charge G Low profile low inductance SMD-10 package E(k) Separated control & Power-connections for easy paralleling Inherently coplanar pins and tab Easy solder inspection and cleaning VCES = 600V VCE(ON)typ = 1.5V @VGE = 15V, IC = 50A E Benefits q q q q Highest power density and efficiency available HEXFRED diodes optimized for performance with IGBTs; Minimized recovery characteristics IGBTs optimized for specific application conditions; high input impedance requires low gate drive power Low noise and interference Parameter Max. 600 100 50 400 400 50 400 20 350 140 -55 to + 150 SMD-10 Absolute Maximum Ratings Units V A VCES IC @ TC = 25C IC @ TC = 100C I CM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range V W C Thermal Resistance Parameter RJC RJC RCS Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical), * Weight Min. -- -- -- -- Typ. -- -- 0.59 6.0(0.21) Max. 0.36 0.69 -- -- Units C/W g (oz) Notes: Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature (figure 20) VCC = 80%(VCES), VGE = 20V, L=10H, RG= 5.0 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. * Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink. IRG4ZC70UD Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 -- -- V Temperature Coeff. of Breakdown Voltage -- 0.36 -- V/C Collector-to-Emitter Saturation Voltage -- 1.49 1.9 -- 1.80 -- V -- 1.47 -- Gate Threshold Voltage 3.0 -- 6.0 Temperature Coeff. of Threshold Voltage -- -7.6 -- mV/C Forward Transconductance 34 52 -- S Zero Gate Voltage Collector Current -- -- 250 A -- -- 1.3 mA Diode Forward Voltage Drop -- 1.24 1.5 V -- 1.16 1.3 Gate-to-Emitter Leakage Current -- -- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 50A VGE = 15V IC = 100A see figure 2, 5 IC = 50A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 50A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 50A see figure 13 IC = 50A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di(rec)M/dt Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Diode Peak Reverse Recovery Current -- -- Diode Reverse Recovery Charge -- -- Diode Peak Rate of Fall of Recovery -- During tb -- Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Typ. 430 48 130 71 41 250 110 1.59 1.78 3.37 68 43 370 130 4.5 2.0 7400 730 90 90 120 7.3 11 360 780 370 220 Max. Units Conditions 640 IC = 50A 72 nC VCC = 400V see figure 8 190 VGE = 15V -- TJ = 25C -- ns IC = 50A, VCC = 480V 370 VGE = 15V, RG = 5.0 220 Energy losses include "tail" and -- diode reverse recovery. -- mJ see figures 9, 10, 18 4.7 -- TJ = 150C, see figures 11, 18 -- ns IC = 50A, VCC = 480V -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH -- VGE = 0V -- pF VCC = 30V see figure 7 -- = 1.0MHz 140 ns TJ = 25C see figure 180 TJ = 125C 14 IF = 50A 11 A TJ = 25C see figure 16 TJ = 125C 15 VR = 200V 550 nC TJ = 25C see figure 1200 TJ = 125C 16 di/dt = 200As -- A/s TJ = 25C see figure -- TJ = 125C 17 2 www.irf.com IRG4ZC70UD 35 F or b oth: 30 LOAD CURRENT (A) 25 S q u a re w a v e : 60% of rated voltage D uty c y c le : 50 % T J = 12 5 C T sink = 90 C G a te d riv e a s s pe c ified P ow er D is s ipation = 27 W 20 15 I 10 Id e a l d io d es 5 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) TJ = 25 C TJ = 150 C I C , Collector-to-Emitter Current (A) TJ = 150 C 100 100 TJ = 25 C 10 10 1 0.0 V GE = 15V 20s PULSE WIDTH 1.0 2.0 3.0 4.0 5.0 1 5.0 V CC = 50V 5s PULSE WIDTH 6.0 7.0 8.0 9.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4ZC70UD 100 2.5 80 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) 2.0 60 IC = 100 A 40 1.5 IC = 50 A IC = 25 A 20 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4ZC70UD 14000 20 12000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc VCC = 400V I C = 50A 16 C, Capacitance (pF) 10000 Cies 8000 12 6000 8 4000 Coes 4 2000 Cres 1 10 100 0 0 0 100 200 300 400 500 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 8.0 Total Switching Losses (mJ) 6.0 Total Switching Losses (mJ) V CC V GE TJ 7.0 I C = 480V = 15V = 25 C = 50A 100 RG = 5.0 Ohm VGE = 15V VCC = 480V 10 IC = 100 A 5.0 IC = 50 A IC = 25 A 4.0 3.0 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( ) TJ , Junction Temperature C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4ZC70UD 12 8 6 4 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 10 VGE = Ohm 5.0 = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 o C 100 10 2 0 0 20 40 60 80 100 SAFE OPERATING AREA 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Turn-Off SOA Instantaneous forward current - IF (A) 100 TJ = 150C TJ = 125C TJ = 25C 10 1 0.0 0.4 0.8 1.2 1.6 2.0 F orward V oltage D rop - V F M (V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4ZC70UD 100 150 I F = 100A I F = 50A I F = 25A 120 I F = 100A I F = 50A I F = 25A 90 trr- (nC) Irr- ( A) 60 30 V R = 2 00 V T J = 1 2 5C T J = 2 5 C 0 100 10 VR = 2 00 V T J = 1 2 5C T J = 2 5 C 1000 1 100 1000 di f /dt - (A / s) di f /dt - (A/ s) Fig. 14 - Typical Reverse Recovery vs. dif/dt 4000 V R = 2 00 V T J = 1 2 5C T J = 2 5 C Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 00 V T J = 1 2 5C T J = 2 5 C I F = 100A 3000 IF = 100A I F = 50A I F = 50A di (rec) M/dt- (A /s) IF = 25A I F = 25A Qrr- (nC) 1000 2000 1000 0 100 100 100 1000 di f /dt - (A / s) 1000 di f /dt - (A/ s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4ZC70UD Same type device as D .U.T. 90% V ge +V ge V ce 80% of Vce 430F D .U .T. Ic 10% V ce Ic 5% Ic td (off) tf 90% Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf E off = Vce Ic dt t1+5 S V ce ic dt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V pk Irr Vcc D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 E rec = Vc Ic dt t4 V d id dt t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4ZC70UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0 F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4ZC70UD Case Outline -- SMD-10 Dimensions are shown in millimeters 17.30 14.20 4.27 n/c E(k) G 0.90 5.55 29.00 C 0.90 E E Recommended footprint WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 10 www.irf.com |
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