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| BPW24R Vishay Telefunken Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device features a low capacitance and high speed even at low supply voltages. Features D D D D D D D D D Hermetically sealed TO-18 case Exact central chip alignment Cathode connected to case Angle of half sensitivity = 12 Extra fast response times at low operating voltages High photo sensitivity Radiant sensitive area A=0.78 mm2 Suitable for visible and near infrared radiation For photodiode and photovoltaic cell operation 94 8642 Applications High speed photo detector Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tamb Tstg Tsd RthJA Value 60 210 125 -55...+125 -55...+125 260 350 Unit V mW C C C C K/W x 25 C t x5s Document Number 81520 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) BPW24R Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Breakdown Voltage Reverse Dark Current Diode Capacitance Test Conditions IR = 100 mA, E = 0 VR = 50 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 VR = 20 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm EA = 1 klx Ee = 1 mW/cm2, l = 950 nm, VR = 20 V VR = 5 V, l = 870 nm VR = 5 V, l = 900 nm Symbol V(BR) Iro CD CD CD Vo TKVo Ik TKIk Ira s(l) s(l) Min 60 Typ 200 2 11 3.8 2.5 450 -2 55 0.1 60 0.60 0.55 12 900 600...1050 7 7 Max 10 Unit V nA pF pF pF mV mV/K Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light Current Absolute Spectral Sensitivity y mA mA %/K 45 Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Rise Time VR = 20 V, RL = 50 W, l = 820 nm Fall Time VR = 20 V, RL = 50 W, l = 820 nm lp l0.5 tr tf A/W A/W deg nm nm ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 VR=50V I ra rel - Relative Reverse Light Current I ro - Reverse Dark Current ( nA ) 1.4 103 1.2 l=950nm VR=5V 102 1.0 101 0.8 100 20 94 8454 0.6 40 60 80 100 120 94 8409 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 81520 Rev. 2, 20-May-99 BPW24R Vishay Telefunken S ( l ) rel - Relative Spectral Sensitivity 10 94 8458 1000 Ira - Reverse Light Current ( m A ) 1.0 0.8 0.6 0.4 0.2 0 350 100 10 VR=10V l=950nm 1 0.1 0.01 94 8455 0.1 1 550 750 950 1150 Ee - Irradiance ( mW / cm2 ) l - Wavelength ( nm ) Figure 3. Reverse Light Current vs. Irradiance 100 Ira - Reverse Light Current ( m A ) 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 1 0.1 94 8456 Figure 6. Relative Spectral Sensitivity vs. Wavelength 0 10 20 30 S rel - Relative Sensitivity l=950nm 40 1.0 0.9 0.8 0.7 50 60 70 80 1 10 100 94 8459 0.6 0.4 0.2 0 0.2 0.4 0.6 VR - Reverse Voltage ( V ) Figure 4. Reverse Light Current vs. Reverse Voltage Figure 7. Relative Radiant Sensitivity vs. Angular Displacement 12 CD - Diode Capacitance ( pF ) 10 8 6 4 2 0 0.1 94 8439 E=0 f=1MHz 1 10 100 VR - Reverse Voltage ( V ) Figure 5. Diode Capacitance vs. Reverse Voltage Document Number 81520 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) BPW24R Vishay Telefunken Dimensions in mm 14487 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 81520 Rev. 2, 20-May-99 BPW24R Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81520 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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