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 2SC3322
Silicon NPN Tirple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1. Base 2. Collector (Flange) 3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC IC(peak) IB PC* Tj Tstg
1
Ratings 900 800 7 5 10 2.5 80 150 -55 to +150
Unit V V V A A A W C C
2SC3322
Electrical Characteristics (Ta = 25C)
Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 800 800 Typ -- -- Max -- -- Unit V V Test conditions IC = 0.2 A, RBE = , L = 100 mH IC = 4 A, IB1 = 1.5 A, IB2 = -0.8 A, VBE = -5.0 V, L = 180 H, Clamped IE = 10 mA, IC = 0 VCB = 750 V, IE = 0 VCE = 650 V, RBE = VCE = 5 V, IC = 0.5 A* VCE = 5 V, IC = 3 A* V V s s s IC = 3 A, IB1 = 0.6 A, IB2 = -1.5 A, VCC 250 V
1 1
Emitter to base breakdown voltage Collector cutoff current
V(BR)EBO ICBO ICEO hFE1 hFE2 VCE(sat) VBE(sat) ton tstg tf
7 -- -- 15 7 -- -- -- -- --
-- -- -- -- -- -- -- -- -- --
-- 100 100 -- -- 1.0 1.5 1.0 3.0 1.0
V A A
DC current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test
IC = 1.5 A, IB = 0.3 A*
1
2
2SC3322
Maximum Collector Dissipation Curve 120 Collector power dissipation Pc (W)
80
40
0
50 100 Case Temperature TC (C) Area of Safe Operation
150
10 i C (peak) IC (max) Collector Current IC (A) 1.0
s 25 0 s s 5 0 ms s 25 10 m 1 = on ati PW er ) Op 5C DC = 2 (T C
0.1
0.01 Ta = 25C, 1 Shot Pulse
0.001 1 3 10 30 100 300 1,000 Collector to emitter Voltage VCE (V)
Collector Current Derating Rate 100 Collector Current derating rate (%)
IS /B
80
Lim
it A
re
a
60
40
20
0
50 100 Case temperature TC (C) Transient Thermal Resistance
150
10 Thermal resistance j-c (C/W) 3 1.0
10 m
0.3 0.1 0.03 0.01 0.01 0.01
s-10
s
10
s-
10
ms
0.1 0.1 Time t
1.0 1.0
10 (s) 10 (ms)
3
2SC3322
Reverse Bias Area of Safe Operation 10 600 V, 10 A
Collector Current IC (A)
8
6
4
800 V, 4 A 850 V, 1.5 A IB2 = -0.8 A
2
0 0 200 400 600 800 1,000 Collector to emitter Voltage VCE (V) Collector to Emitter Voltage vs. Base to Emitter Resistance Collector to emitter voltage V (BR)CER (V) 1.000 IC = 1 mA
900
800
700 100
1k 10 k 100 k 1M Base to emitter resistance RBE ()
Typical Output Characteristics 5
1.0 A 0.8 A 0.6 A 0.4 A
Collector Current IC (A)
4
3
2
0.2 A 0.1 A
1
0.05 A
IB = 0 0
TC = 25C
1 2 3 4 5 Collector to emitter Voltage VCE (V) Typical Transfer Characteristics
5 TC = 25C VCE = 5 V Collector Current IC (A) 4
3
2
1
0
0.4 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V)
4
2SC3322
DC Current Transfer Ratio vs. Collector Current 100 DC current transfer ratio hFE 50 75C 20 10 5
25C
T C = -25
C
2 VCE = 5 V 1 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) Collector to Emitter Saturation Voltage vs. Base Current 10
Collector to emitter saturation voltage VCE (V)
10 TC = 25C 3 1.0 1.5 A 0.3 0.1 IC = 0.5 A 0.03 0.01 0.01 0.03 2.5 A
0.1 0.3 1.0 3 Base current IB (A)
10
Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) 10 3 1.0 0.3 0.1 0.03 VCE (sat) VBE (sat)
TC = 25C
l C = 5 lB 0.01 0.01 0.03 0.1 0.3 1.0 3 10 Collector current IC (A)
5
2SC3322
Switching Time vs. Collector Current 10 tstg 3 Switching time t (s) 1.0 0.3 0.1 0.03
tf ton
IC = 5 IB1 = -2 IB2 ~ VCC = 250 V 0.01 0.01 0.03 0.1 0.3 1.0 3 10 Collector current IC (A) Switching Time vs. Case Temperature 5 tstg Switching time t (s) 2 1.0 0.5 ton 0.2 0.1 0.05 0 IC = 3 A IB1 = 0.6 A, IB2 = -1.5 A ~ VCC = 250 V 25 50 75 100 Case temperature TC (C) 125
tf
6
2SC3322
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
7


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