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KSE800/801/803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
* Complement to KSE700/701/702/703
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Symbol VCBO 60 80 VCEO 60 80 5 4 0.1 40 150 -55 ~ 150 V V V A A W C C V V Rating Unit
VEBO IC IB PC TJ T STG
1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (TC=25C)
Characteristic Collector Emitter Breakdown Voltage : KSE800/801 : KSE802/803 Collector Cutoff Current : KSE800/801 : KSE802/803 Collector Cutoff Current Symbol BVCEO Test Condition IC = 50mA, IB = 0 Min 60 80 ICEO VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 T C = 100C VBE = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA VBE(on) VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 1.2 2.5 3 V V V 100 100 100 500 2 750 750 100 2.5 2.8 3 V V V A A A A mA Max Unit V V
ICBO
Emitter Cutoff Current DC Current Gain : KSE800/802 : KSE801/803 : ALL DEVICES Collector-Emitter Saturation Voltage : KSE800/802 : KSE801/803 : ALL DEVICES Base-Emitter On Voltage : KSE800/802 : KSE801/803 : ALL DEVICES
IEBO hFE
VCE(sat)
Rev. B
(c)1999 Fairchild Semiconductor Corporation
KSE800/801/803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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