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J/SST174 Series
P-Channel JFETs
J174 J175 J176 J177 Product Summary
Part Number
J/SST174 J/SST175 J/SST176 J/SST177
SST174 SST175 SST176 SST177
VGS(off) (V)
5 to 10 3 to 6 1 to 4 0.8 to 2.25
rDS(on) Max (W)
85 125 250 300
ID(off) Typ (pA)
-10 -10 -10 -10
tON Typ (ns)
25 25 25 25
Features
D D D D D Low On-Resistance: J174 <85 W Fast Switching--tON: 25 ns Low Leakage: -10 pA Low Capacitance: 5 pF Low Insertion Loss
Benefits
D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering
Applications
D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters
Description
The J/SST174 series consists of p-channel analog switches designed to provide low on-resistance and fast switching. This series simplifies series-shunt switching applications when combined with the Siliconix J/SST111 series.
TO-226AA (TO-92) D 1 D G 2 S S 3 Top View Top View J174 J175 J176 J177 SST174 (S4)* SST175 (S5)* SST176 (S6)* SST177 (S7)* *Marking Code for TO-236 2 1 3 G
The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information).
TO-236 (SOT-23)
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70257. Applications information may also be obtained via FaxBack, request document #70597.
Siliconix P-37653--Rev. D, 25-Jul-94
1
J/SST174 Series
Absolute Maximum Ratings
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C
Specificationsa for J/SST174 and J/SST175
Limits
J/SST174 J/SST175
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage
Symbol
Test Conditions
Typb
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID( ff) D(off) rDS(on) VGS(F)
IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -10 nA VDS = -15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 125_C VDG = -15 V, ID = -1 mA VDS = -15 V, VGS = 10 V TA = 125_C VGS = 0 V, VDS = -0.1 V IG = -1 mA , VDS = 0 V
45
30 5 -20 10 -135 1
30 3 -7 6 -70 1
V mA
0.01 5 0.01 -0.01 -5
nA -1 85 -1 125 W V
-0.7
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos rds(on) Ciss Crss en VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 0 V, VGS = 0 V, f = 1 MHz VDS = 0 V, VGS = 10 V f = 1 MHz VDG = -10 V, ID = -1 mA f = 1 kHz 20 5 20 pF nV Hz VDS = -15 V, ID = -1 mA kHz f = 1 kH 4.5 20 85 125 mS mS W
Switching
Turn-On Time Turn-Off Time td(on) tr td(off) tf VGS(L) = 0 V, VGS(H) = 10 V () () See Switching Ci i S S i hi Circuit 10 15 10 20 PSCIA ns
Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%.
2
Siliconix P-37653--Rev. D, 25-Jul-94
J/SST174 Series
Specificationsa for J/SST176 and J/SST177
Limits
J/SST176 J/SST177
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage
Symbol
Test Conditions
Typb
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID( ff) D(off) rDS(on) VGS(F)
IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -10 nA VDS = -15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 125_C VDG = -15 V, ID = -1 mA VDS = -15 V, VGS = 10 V TA = 125_C VGS = 0 V, VDS = -0.1 V IG = -1 mA , VDS = 0 V
45
30 1 -2 4 -35 1
30 0.8 -1.5 2.25 -20 1 V mA
0.01 5 0.01 -0.01 -5
nA -1 250 -1 300 W V
-0.7
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos rds(on) Ciss Crss en VDS = -15 V, ID = -1 mA f = 1 kHz VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 0 V, VGS = 0 V, f = 1 MHz VDS = 0 V, VGS = 10 V f = 1 MHz VDG = -10 V, ID = -1 mA f = 1 kHz 20 5 20 pF nV Hz 4.5 20 250 300 mS mS W
Switching
Turn-On Turn On Time Turn-Off Time td(on) tr td(off) tf VGS(L) = 0 V, VGS(H) = 10 V () () S S i hi Circuit See Switching Ci i 10 15 10 20 PSCIA ns
Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%.
Siliconix P-37653--Rev. D, 25-Jul-94
3
J/SST174 Series
Typical Characteristics
200 rDS(on) - Drain-Source On-Resistance ( W )
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage
IDSS
-100 g fs - Forward Transconductance (mS) I DSS - Saturation Drain Current (mA)
18
Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage
250 gfs and gos @ VDS = -15 V VGS = 0 V, f = 1 kHz g os - Output Conductance ( mS)
160 rDS
-80
15 gfs 12 gos
200
120
-60
150
80
-40
9
100
40
rDS @ ID = -1 mA, VGS = 0 V IDSS @ VDS = -15 V, VGS = 0 V 0 2 4 6 8 10
-20
6
50
0 VGS(off) - Gate-Source Cutoff Voltage (V)
0
3 0 2 4 6 8 VGS(off) - Gate-Source Cutoff Voltage (V) 250 rDS(on) - Drain-Source On-Resistance ( W )
0 10
-25
Output Characteristics
VGS(off) = 3 V VGS = 0 V
On-Resistance vs. Drain Current
TA = 25_C
-20 I D - Drain Current (mA) 0.5 V -15 1.0 V -10 1.5 V -5 2.0 V 0 0 -4 -8 -12 -16 -20 VDS - Drain-Source Voltage (V)
200
VGS(off) = 1.5 V
150 3V 5V 50
100
0 -1 -10 ID - Drain Current (mA) -100
-2
Output Characteristics
rDS(on) - Drain-Source On-Resistance ( W ) VGS = 0 V 1.5 V
300
On-Resistance vs. Temperature
ID = -1 mA rDS changes X 0.7%/_C
-1.6 I D - Drain Current (mA)
0.5 V 1.0 V
240
-1.2 2.0 V -0.8
180
VGS(off) = 1.5 V 3V 5V
120
-0.4 VGS(off) = 3 V 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 VDS - Drain-Source Voltage (V)
60
0 -55 -35 -15 5 25 45 65 85 105 125 TA - Temperature (_C)
4
Siliconix P-37653--Rev. D, 25-Jul-94
J/SST174 Series
Typical Characteristics (Cont'd)
50
Turn-On Switching
tr approximately independent of ID VDD = -10 V, RG = 220 W VGS(H) = 10 V, VGS(L) = 0 V Switching Time (ns)
20
Turn-Off Switching
tf VGS(off) = 1.5 V
40 Switching Time (ns)
16 5V
30
tON @ ID = -5 mA
tON @ ID = -10 mA
12 td(off) VGS(off) = 1.5 V 8 5V 4 VDD = -10 V, VGS(H) = 10 V, VGS(L) = 0 V
20
10
tr @ ID = -5 mA
0 0 1 2 3 4 5 VGS(off) - Gate-Source Cutoff Voltage (V)
0 0 -3 -6 -9 -12 -15 ID - Drain Current (mA)
30
Capacitance vs. Gate-Source Voltage
VDS = 0 V f = 1 MHz
100 nA 10 nA
Gate Leakage Current
ID = -1 mA -10 mA TA = 125_C IGSS @ 125_C -10 mA
24 I G - Gate Leakage Capacitance (pF)
1 nA 100 pA 10 pA 1 pA 0.1 pA
18 Ciss 12 Crss 6
TA = 25_C -1 mA IGSS @ 25_C
0 0 4 8 12 16 20 VGS - Gate-Source Voltage (V)
0
-10
-20
-30
-40
-50
VDG - Drain-Gate Voltage (V)
-40
Transfer Characteristics
VGS(off) = 3 V VDS = -15 V
100
Noise Voltage vs. Frequency
(nV / Hz)
-32 I D - Drain Current (mA)
ID = -0.1 mA
-24
TA = -55_C 25_C
-1 mA 10
-16
-8 125_C 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V)
e n - Noise Voltage
VDS = -10 V 1 10 100 1k f - Frequency (Hz) 10 k 100 k
Siliconix P-37653--Rev. D, 25-Jul-94
5
J/SST174 Series
Switching Time Test Circuit
174
VDD VGG RL* RG* ID(on) -10 V 20 V 560 W 100 W -15 mA VGG VDD
175
-6 V 12 V 750 W 220 W -7 mA
176
-6 V 8V 1800 W 390 W -3 mA
177
-6 V 5V 5600 W 390 W -1 mA 51 W 1.2 kW Sampling Scope 51 W 51 W VGS(L) 0.1 mF RG 7.5 kW 1.2 kW VGS(H) RL
*Non-inductive
Input Pulse
Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz
Sampling Scope
Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
6
Siliconix P-37653--Rev. D, 25-Jul-94

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