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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol Test Conditions
VDSS IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20
ID25
RDS(on) 23 mW 23 mW 20 mW
200 V 90 A 200 V 100 A 200 V 106 A trr 200 ns
TO-264 AA TO-264 AA (IXFK)
Maximum Ratings IXFK IXFN IXFN 90N20 100N20 106N20 200 200 200 V 200 20 30 90 76 360 50 30 5 500 200 20 30 100 400 50 30 5 520 150 -55 ... +150 200 V 20 V 20 V 106 A A 424 A A 30 mJ 5 V/ns W C C C C V~ V~
VDSS VDGR VGS VGSM ID25 ID80 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight
TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C, Chip capability TC = 80C, limited by external leads TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
G D S
(TAB)
miniBLOC, SOT-227 B (IXFN) E153432
S D G
G S S S D
G = Gate S = Source
D = Drain TAB = Drain
-55 ... +150
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s
300 0.9/6 10
2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier
l q q q q q q q
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 200 TJ = 25C TJ = 125C IXFK90N20 IXFN100N20 IXFN106N20 400 2 0.023 0.023 0.020 V V nA mA mA W W W
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 %
Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays
q q q q q q q
Advantages Easy to mount Space savings High power density
q q q
IXYS reserves the right to change limits, test conditions, and dimensions.
92804H (7/97)
(c) 2000 IXYS All rights reserved
1-4
IXFK100N20
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 9000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 590 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 80 75 30 380 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 70 190 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.24 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W
IXFN90N20
IXFN106N20
TO-264 AA Outline
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83
Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
Source-Drain Diode Symbol IS Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. IXFK90N20 IXFN100N20 IXFN106N20 IXFK90N20 IXFN100N20 IXFN106N20 90 100 106 360 424 1.5 200 A A A A A V ns mC A
miniBLOC, SOT-227 B
ISM VSD t rr QRM IRM
Repetitive; pulse width limited by TJM
IF = 100 A, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = 50 A, -di/dt = 100 A/ms, VR = 100 V 3 38
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFK100N20
Fig. 1 Output Characteristics
200 180 160 140 120 100 80 60 40 20 0
5V 6V VGS = 10V TJ = 25C 9V 8V 7V
IXFN90N20
IXFN106N20
Fig. 2 Input Admittance
200 180 160 140 120 100 80 60 40 20 0
ID - Amperes
ID - Amperes
TJ = 25C
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
2.6 2.4
TJ = 25C
2.50 2.25
Fig. 4 Temperature Dependence of Drain to Source Resistance
RDS(on) - Normalized
RDS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 50 100 150 200 250 300 350
VGS = 15V VGS = 10V
2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150
ID = 53A
ID - Amperes
TJ - Degrees C
120 100
Fig. 5 Drain Current vs. Case Temperature
106N20
1.2 1.1
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
VGS(th) BVDSS
BV/VG(th) - Normalized
25 50 75 100 125 150
ID - Amperes
80 60 40 20 0 -50
90N20
1.0 0.9 0.8 0.7 0.6
-25
0
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXFK100N20
Fig.7 Gate Charge Characteristic Curve
9000 14 12
VDS = 100V ID = 50A IG = 10mA
IXFN90N20
IXFN106N20
Fig.8 Capacitance Curves
Ciss
8000
Capacitance - pF
7000 6000 5000 4000 3000 2000 1000 0
Crss Coss f = 1MHz VDS = 25V
VGE - Volts
10 8 6 4 2 0 0
50
100 150 200 250 300 350 400
0
5
10
15
20
25
Gate Charge - nCoulombs
VDS - Volts
100 80
Fig.9 Source Current vs. Source to Drain Voltage
ID - Amperes
60 40
TJ = 125C
TJ = 25C
20 0 0.4
0.6
0.8
1.0
1.2
VSD - Volts
Fig.10 Transient Thermal Impedance
0.5
Thermal Response - K/W
0.1
0.01 0.001
0.01
0.1
1
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
4-4

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