View CHA7010-99_306939.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CHA7010
X-band GaInP HBT High Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process; * the backside of the chip is both RF and DC grounded * bond pads and back side are gold plated for compatibility with eutectic die attach method and thermo-sonic or thermo-compression bonding process.
Vctr Vc
Main Features
n n n n n n 10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz On-chip bias control Linear collector current control High impedance interface for pulse mode n Temperature compensated n Chip size: 4.74 x 4.36 x 0.1 mm
Vctr
Vc
Input Matching Network
Inter-stage
Output Combiner
Vctr
Vc
Vctr
Vc
Main Characteristics
Tamb = +25C Symbol F_op P_sat P_1dBc G_lin Parameter Min 8.4 Typ 9.4 10 8 18
1/7
Max 10.4
Unit GHz W W dB
Operating frequency range Saturated output power Output power @ 1dBc Linear gain
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA70102175 -24-June-02 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Electrical Characteristics
Tamb = 25C, Vc=9V, Vctr=5.5V, Pulse width=80s , Duty cycle = 30% Symbol
F_op G_lin_1 G_lin_2 G_lin_T RL_in RL_out P_sat_1 P_sat_2 P_sat_T P_1dBc_1 P_1dBc_2 PAE_sat PAE_1dBc Vc Ic Vctr Zctr Top
CHA7010
Parameter Operating frequency Linear gain (8.4 to 9.4GHz) Linear gain (9.4 to 10.4GHz) Linear gain variation versus temperature Input Return Loss Output Return Loss Saturated output power (8.4 to 9.8GHz) Saturated output power (9.8 to 10.4GHz) Saturated output power variation versus temperature Output power @ 1dBc (8.4 to 9.8GHz) Output power @ 1dBc (9.8 to 10.4GHz) Power Added Efficiency in saturation Power Added Efficiency @ 1dBc Power supply voltage Power supply quiescent current (1) Collector current control voltage Vctr input port impedance (2) Operating temperature range (3)
Min 8.4 14 16 8 6 39 38
Typ 9.4 16 18 -0.035 12 12 40 39 -0.01 39 38 35 32 9 2.4 5.5 350
Max 10.4
Unit GHz dB dB dB/C dB dB dBm dBm dB/C dBm dBm % % V A V Ohm C
38 37 30 27
-30
+80
(1) This parameter is fixed by Vctr (2) This value corresponds to the 4 ports in parallel (Pin 4, 9, 17, 22) (3) The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Tamb = 25C Symbol Cmp Vc Ic Ic_sat Vctr Tstg
(1)
Parameter Compression level Power supply voltage Power supply quiescent current Power supply current in saturation Collector current control voltage Storage temperature range
Values 6 10 2.8 3.5 6.5 -55 to +125
Unit dB V A A V C
Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA70102175 -24-June-02
2/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Typical measured characteristics
Measurements in test fixture : Tamb=25C, Vc=9V, Vctr=5.5V, Pulse width=80s , Duty cycle = 30%
20 16 12 S21, S11, S22 (dB) 8 4 0 -4 -8 -12 -16 -20 8 8,5 9 9,5 10 10,5 11
db(S21) db(S11) db(S22)
CHA7010
11,5
12
Frequency(GHz)
S-parameters
42 40 38 Output power (dBm) 36 34 32 30 28 26 24 22 -1 0 1 2 3 4 Compression level (dB) Pout @ 8,4 GHz Pout @ 8,6 GHz Pout @ 8,8 GHz Pout @ 9 GHz Pout @ 9.2 GHz Pout @ 9.4 GHz Pout @ 9.6 GHz Pout @ 9.8 GHz Pout @ 10 GHz Pout @ 10.2 GHz Pout @ 10.4 GHz 5 6 7
Output power versus compression level : F= 8.4 to 10.4GHz
Ref. : DSCHA70102175 -24-June-02 3/7 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Typical measured characteristics
Measurements in test fixture : Tamb=25C, Vc=9V, Vctr=5.5V, Pulse width=80s , Duty cycle = 30%
42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8,4 8,6 8,8
CHA7010
3900 3700 3500 3300 3100 2900 2700
Pout @ pin = 27 dBm Pae @ pin = 27 dBm gain @ pin = 27 dBm Ic @ pin = 27 dBm
P_out(dBm), Pae(%), Gain(dB)
2500 2300 2100 1900 1700 1500
9
9,2
9,4
9,6
9,8
10
10,2
10,4
Frequency (GHz)
Saturated output power, PAE, Gain and collector current versus frequency
Ref. : DSCHA70102175 -24-June-02
4/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Collector current (mA)
X-band High Power Amplifier
Dimensions and Pad allocation
CHA7010
2
3
4
5
6
7
8
9
10
11
12
1
13
24 23 22 21
20
19
18
17
16
15
14
Unit = m External chip size (including saw streets) = 4740 x 4360 +/- 35 Chip thickness = 100 +/- 10 HF pads (1, 13) = 118 x 68 DC pads (4, 9, 17, 22) = 96 x 96 DC pads (6, 11, 15, 20) = 288 x 96
Pin number 1 2, 3, 8, 18, 23, 24 4, 9, 17, 22 5, 7, 10, 12, 14, 19, 16, 21 6, 11, 15, 20 13
Ref. : DSCHA70102175 -24-June-02
Pin name IN Vctr GND Vc OUT
Description Input RF port NC Collector control current port Ground (NC) Power supply voltage Output RF port
5/7 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Assembly recommendations
C2
CHA7010
Vctr
C1 C1 C1 C1 C2
Vc
Lbonding
Lbonding
Vctr
C1 C1 C2
C1 C1
C2
Vc
For thermal and electrical considerations, the chip should be brazed on a metal base plate. The RF, DC and modulation port inter-connections should be done according to the following table:
Port IN (1) OUT (13) Vc (6, 11, 15, 20)) Vctr (4, 9, 17, 22)
Connection Inductance (Lbonding) = 0.4nH Inductance (Lbonding) = 0.4nH Inductance ~ 1nH Inductance ~ 1nH
External capacitor
C1 ~ 100pF C2 ~ 10nF C1 ~ 100pF
Ref. : DSCHA70102175 -24-June-02
6/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7010
Ordering Information
Chip form : CHA7010-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA70102175 -24-June-02
7/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

▲Up To Search▲

Price & Availability of CHA7010-99

	To Download CHA7010-99 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .