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| SI7909DN New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () 0.037 @ VGS = -4.5 V -12 0.048 @ VGS = -2.5 V 0.068 @ VGS = -1.8 V ID (A) -7.7 -6.8 -5.7 FEATURES * TrenchFET(R) Power MOSFETS: 1.8-V Rated * New Low Thermal Resistance PowerPAK(R) Package * Advanced High Cell Density Process * Ultra-Low rDS(on), and High PD Capability Pb-free Available RoHS* COMPLIANT APPLICATIONS * * * * Load Switch PA Switch Battery Switch Bi-Directional Switch S1 S2 PowerPAK 1212-8 3.30 mm S1 1 2 3.30 mm G1 S2 3 4 D1 G2 G1 G2 8 7 D1 D2 6 5 D2 Bottom View D1 P-Channel MOSFET D2 P-Channel MOSFET Ordering Information: SI7909DN-T1 SI7909DN-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) b,c Symbol VDS VGS TA = 25C TA = 85C ID IDM IS TA = 25C TA = 85C PD TJ, Tstg 10 secs -12 8 -7.7 -5.5 -20 -2.3 2.8 1.5 Steady State Unit V -5.3 -3.8 -1.1 1.3 0.85 -55 to 150 260 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t 10 sec Steady State Steady State Symbol RthJA Typical 35 75 4 Maximum 44 94 5 Unit C/W Maximum Junction-to-Case RthJC Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71996 S-51210-Rev. C, 27-Jun-05 www.vishay.com 1 SI7909DN Vishay Siliconix New Product SPECIFICATIONS TJ = 25C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.3 A, di/dt = 100 A/s VDD = -6 V, RL = 6 ID -1 A, VGEN = -4.5 V, RG = 6 VDS = -6 V, VGS = -4.5 V, ID = -7.7 A VDS = VGS, ID = -700 A VDS = 0 V, VGS = 8 V VDS = -12 V, VGS = 0 V VDS = -12 V, VGS = 0 V, TJ = 85C VDS -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -7.7 A VGS = -2.5 V, ID = -6.8 A VGS = -1.8 V, ID = -3.0 A Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Source-Drain Reverse Recovery Time 15.5 2.5 4.3 25 45 90 85 70 40 70 135 130 110 ns 24 nC a Symbol Test Condition Min -0.40 Typ Max -1.0 100 -1 -5 Unit V nA A A -20 0.031 0.040 0.057 17 -0.7 -1.2 0.037 0.048 0.068 S V VDS = -6 V, ID = -7.7 A IS = -2.3 A, VGS = 0 V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25C, unless otherwise noted 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) 2V 12 I D - Drain Current (A) 16 20 12 8 1.5 V 4 1V 0 0 1 2 3 4 8 TC = 125C 4 25C -55C 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics www.vishay.com 2 Transfer Characteristics Document Number: 71996 S-51210-Rev. C, 27-Jun-05 SI7909DN New Product TYPICAL CHARACTERISTICS 0.12 Vishay Siliconix TA = 25C, unless otherwise noted 2400 r DS(on) - On-Resistance ( ) VGS = 1.8 V 0.06 C - Capacitance (pF) 0.09 1800 Ciss 1200 VGS = 2.5 V VGS = 4.5 V Coss 600 Crss 0.03 0.00 0 4 8 12 16 20 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 7.7 A rDS(on) - On-Resistance (Normalized) 1.3 VGS = 4.5 V ID = 7.7 A Capacitance 4 1.2 3 1.1 2 1.0 1 0.9 0 0 4 8 12 16 20 0.8 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 0.12 20 0.10 r DS(on) - On-Resistance ( ) I S - Source Current (A) On-Resistance vs. Junction Temperature 10 TJ = 150C 0.08 ID = 3 A ID = 7.7 A 0.06 0.04 TJ = 25C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71996 S-51210-Rev. C, 27-Jun-05 www.vishay.com 3 SI7909DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS TA = 25C, unless otherwise noted 0.4 ID = 700 A 40 50 0.3 V GS(th) Variance (V) 0.2 Power (W) 30 0.1 20 0.0 10 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (C) Threshold Voltage 100 rDS(on) Limited 10 I D - Drain Current (A) IDM Limited Single Pulse Power, Juncion-To-Ambient P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 10 dc 1 ID(on) Limited VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-To-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 65C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71996 S-51210-Rev. C, 27-Jun-05 SI7909DN New Product TYPICAL CHARACTERISTICS 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix TA = 25C, unless otherwise noted 0.2 0.1 0.02 0.1 0.05 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71996. Document Number: 71996 S-51210-Rev. C, 27-Jun-05 www.vishay.com 5 |
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