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| Sect. 3.1 data sheets 8/7/00 11:52 AM Page 107 OM6056SB OM6058SB OM6060SB Preliminary Data Sheet OM6057SB OM6059SB OM6061SB POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE High Current, High Voltage 100V Thru 1000V, Up To 190 Amp N-Channel, Size 7 MOSFETs FEATURES * * * * * * * Size 7 Die, High Energy Rugged Package Design Solder Terminals Very Low RDS(on) Fast Switching, Low Drive Current Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthroughs DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET technology combined with a package designed specifically for high efficiency, high current applications. They are ideally suited for Hi-Rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures. MAXIMUM RATINGS @ 25C PART NUMBER OM6056SB OM6057SB OM6058SB OM6059SB OM6060SB OM6061SB PIN CONNECTION AND SCHEMATIC VDS 100 V 200 V 500 V 600 V 800 V 1000 V RDS(on) .008 .018 .095 .140 .300 .500 ID (Continuous) 190 A 105 A 58 A 48 A 34 A 18 A 3.1 MECHANICAL OUTLINE 4 11 R0 3.1 - 107 Sect. 3.1 data sheets 8/7/00 11:52 AM Page 108 OM6056SB - OM6061SB ABSOLUTE MAXIMUM RATINGS (T Parameter Drain Source Voltage Drain Gate Voltage (RGS = 1.0 M) Continuous Drain Current @ TC = 25C 2 Continuous Drain Current @ TC = 100C 2 Pulsed Drain Current1 Max. Power Dissipation @ TC = 25C Max. Power Dissipation @ TC = 100C Linear Derating Factor Junction-to-Case Linear Derating Factor Junction-to-Ambient Operating and Storage Temp. Range TJ, Tstg Symbol VDS VDGR ID ID IDM PD PD C = 25C unless otherwise noted) Unit V V A A A W W W/C W/C C C OM6056SB OM6057SB OM6058SB OM6059SB OM6060SB OM6061SB 100 100 190 82 440 200 200 105 44 250 500 500 58 25 130 570 245 4.35 .033 -55 to +150 230 2. Package Pin Limitation: 100 Amps @ 125C. 600 600 48 19 110 800 800 34 15 78 1000 1000 18 7.5 42 Lead Temperature (1/16" from case for 10 sec.) Notes: 1. Pulse Test: Pulse Width 300 sec, Duty Cycle 2%. THERMAL RESISTANCE (MAXIMUM) Junction-to-Case Junction-to-Ambient (Free Air Operation) @ TA = 25C .23 30 C/W C/W RthJC RthJA PRELIMINARY ELECTRICAL CHARACTERISTICS Characteristic Gate Threshold Voltage Gate-Source Leakage Current Off State Drain-Source Leakage Test Condition VDS = VGS, ID = 250A VGS = 20 VDC VDS = VDSS x 0.8 VGS = 0V TC = 25C TC = 125C Symbol VGS(th) IGSS IDSS IDSS (TC = 25C unless otherwise noted) Min. 2.0 Max. 4.0 100 10 .10 100 200 500 600 800 1000 .008 .018 .095 .140 .300 .500 V Units V nA A mA Part No. All All All All OM6056SB OM6057SB 3.1 Drain-Source Breakdown Voltage VGS = 0V, ID = 250 A VDSS OM6058SB OM6059SB OM6060SB OM6061SB OM6056SB OM6057SB Static Drain-Source On-Resistance VGS = 10V, ID = ID25 x 0.5 RDS(on) OM6058SB OM6059SB OM6060SB OM6061SB The above data is preliminary. Please contact factory for additional data and the dynamic and switching characteristics. |
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