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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Performance at 945 MHz, 26 Volts Output Power -- 60 Watts PEP Power Gain -- 18.0 dB Efficiency -- 40% (Two Tones) IMD -- -31.5 dBc * Integrated ESD Protection * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * TO-270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. * TO-272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF9060MR1 MRF9060MBR1
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265-07, STYLE 1 TO-270 DUAL LEAD PLASTIC MRF9060MR1
CASE 1337-01, STYLE 1 TO-272 DUAL LEAD PLASTIC MRF9060MBR1
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 -0.5, +15 223 1.79 -65 to +150 175 Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.56 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 4
MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA
MRF9060MR1 MRF9060MBR1 1
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model MRF9060MR1 MRF9060MBR1 Class 1 (Minimum) M2 (Minimum) C6 (Minimum) C5 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22-A113 MRF9060MR1 MRF9060MBR1 Rating 1 3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 101 53 2.5 -- -- -- pF pF pF (continued) VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- 2.8 3.7 0.21 5.3 4 5 0.4 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
MRF9060MR1 MRF9060MBR1 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Gps 17 18 -- dB Symbol Min Typ Max Unit
37
40
--
%
IMD
--
-31.5
-28
dBc
IRL
--
-14.5
-9
dB
Gps
--
18
--
dB
--
40
--
%
IMD
--
-31
--
dBc
IRL
--
-12.5
--
dB
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1 3
VGG C6 RF INPUT
B1 + C7 L1 C4 Z1 C1 Z2 Z3 Z4 Z5 C2 Z6 Z7 Z8 C3 Z9 C5 Z10 DUT Z11 C9 Z12 Z13 Z14 L2
B2 C14 + C15 + C16 + C17
VDD RF OUTPUT
Z15
Z16
Z17
Z18 C13
C8
C10
C11
C12
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.240 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.100 x 0.270 x 0.080, Taper 0.330 x 0.270 Microstrip 0.120 x 0.270 Microstrip 0.270 x 0.520 x 0.140, Taper 0.240 x 0.520 Microstrip 0.340 x 0.520 Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18
0.060 x 0.520 Microstrip 0.360 x 0.270 Microstrip 0.060 x 0.270 Microstrip 0.130 x 0.060 Microstrip 0.300 x 0.060 Microstrip 0.210 x 0.060 Microstrip 0.600 x 0.060 Microstrip 0.290 x 0.060 Microstrip 0.340 x 0.060 Microstrip
Figure 1. 930-960 MHz Broadband Test Circuit Schematic Table 1. 930-960 MHz Broadband Test Circuit Component Designations and Values
Part B1 B2 C1, C7, C13, C14 C2, C3, C11 C4, C5 C6, C15, C16 C8, C9 C10 C12 C17 L1, L2 N1, N2 WB1, WB2 Board Material PCB Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors, B Case 0.8-8.0 Gigatrim Variable Capacitors 11 pF Chip Capacitors, B Case (MRF9060MR1) 10 pF Chip Capacitors, B Case (MRF9060MBR1) 10 mF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors, B Case 3.9 pF Chip Capacitor, B Case 1.7 pF Chip Capacitor, B Case 220 mF Electrolytic Chip Capacitor 12.5 nH Inductors N-Type Panel Mount, Stripline 15 mil Brass Wear Blocks 30 mil Glass Teflon, r = 2.55 Copper Clad, 2 oz Cu Etched Circuit Board RF-35-0300 TO-270/TO-272 Surface/Bolt Taconic DSelectronics Description Value, P/N or DWG 95F786 95F787 100B470JP 500X 44F3360 100B110JP 500X 100B100JP 500X 93F2975 100B100JP 500X 100B3R9CP 500X 100B1R7BP 500X 14F185 A04T-5 3052-1648-10 Manufacturer Newark Newark ATC Newark ATC Newark Newark ATC ATC Newark Coilcraft Avnet
MRF9060MR1 MRF9060MBR1 4
MOTOROLA RF DEVICE DATA
C6 VDD B2 C7 L1 INPUT C1 C2 C3 C4 WB1 CUT OUT AREA C5 WB2 C14 C8 C9 L2 C15 C16
C17
VGG
B1
OUTPUT C10 C11 C12 C13
MRF9060M MRF9060MB
Figure 2. 930-960 MHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1 5
18 G ps , POWER GAIN (dB) 17 16 15 14 13 12 11 930 935 940
Gps VDD = 26 Vdc Pout = 60 W (PEP) IDQ = 450 mA Two-Tone, 100 kHz Tone Spacing IMD IRL
45 40 35
, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) -10 -12 -14 -16 -18
19
50
-30 -32 -34
945
950
955
-36 960
f, Frequency (MHz)
Figure 3. Class AB Broadband Circuit Performance
18.5 G ps , POWER GAIN (dB) 18
IDQ = 625 mA 500 mA 450 mA
IMD, INTERMODULATION DISTORTION (dBc)
19
-15 -20 -25 -30 -35 -40 -45 -50 -55 1 IDQ = 275 mA 450 mA 500 mA 625 mA 10 Pout, OUTPUT POWER (WATTS) PEP VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 100
17.5 17
275 mA VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
16.5
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 7th Order -70 -80 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 5th Order VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz
20 18 G ps , POWER GAIN (dB) 3rd Order 16 14 12 10 8 VDD = 26 Vdc IDQ = 450 mA f = 945 MHz 10 Gps
IRL, INPUT RETURN LOSS (dB)
-28
60 50 40 30 20 10 0 100 , DRAIN EFFICIENCY (%)
0.1
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Power Gain and Efficiency versus Output Power
MRF9060MR1 MRF9060MBR1 6
MOTOROLA RF DEVICE DATA
18 G ps , POWER GAIN (dB) 16 14 12 10 8
Gps
40 20 0 -20
VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz
IMD
-40 -60
1
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 8. Power Gain, Efficiency, and IMD versus Output Power
MOTOROLA RF DEVICE DATA
IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%)
20
60
MRF9060MR1 MRF9060MBR1 7
f = 930 MHz f = 960 MHz Zsource
Zo = 2
Zload*
f = 930 MHz
f = 960 MHz
VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource 0.63 + j0.57 0.60 + j0.41 0.57 + j0.45 Zload 1.8 + j0.84 1.7 + j0.55 1.6 + j0.36
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Input and Output Impedance
MRF9060MR1 MRF9060MBR1 8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1 9
PACKAGE DIMENSIONS
B
E1
2X
2X
D3
E4 aaa
M
PIN ONE ID
DA
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE -H-. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. DIMENSIONS "D" AND "E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE -D-. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 F b1 c1 aaa INCHES MIN MAX .076 .084 .038 .044 .040 .042 .416 .424 .376 .384 .290 .320 .016 .024 .436 .444 .236 .244 .066 .074 .150 .180 .058 .066 .025 BSC .193 .199 .007 .011 .004 MILLIMETERS MIN MAX 1.93 2.13 0.96 1.12 1.02 1.07 10.57 10.77 9.55 9.75 7.37 8.13 0.41 0.61 11.07 11.28 5.99 6.20 1.68 1.88 3.81 4.57 1.47 1.68 0.64 BSC 4.90 5.06 0.18 0.28 0.10
D aaa
M
DA
2X
b1
D1
E
A
E3
PIN 2
D2
PIN 3
BOTTOM VIEW c1 H A1
2X DATUM PLANE
A2
NOTE 7
F
ZONE J
MRF9060MR1 MRF9060MBR1 10
CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC
E2
EXPOSED HEATSINK AREA PIN 1
A
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
D
CASE 1265-07 ISSUE F TO-270 DUAL LEAD PLASTIC MRF9060MR1
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B
2X
E1
A
r1 B
M
aaa
M
CA
M
PIN 3
PIN ONE ID
D1
2X
b1
M
aaa
CA
M
D
2
1
PIN ONE ID
E VIEW Y-Y
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. DIM A A1 A2 D D1 E E1 F b1 c1 r1 aaa INCHES MIN MAX .098 .110 .038 .044 .040 .042 .926 .934 .810 BSC .438 .442 .246 .254 .025 BSC .199 .193 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.49 2.79 0.96 1.12 1.02 1.07 23.52 23.72 20.57 BSC 11.12 11.23 6.25 6.45 0.64 BSC 4.90 5.05 .18 .28 1.60 1.73 .10
c1
H
DATUM PLANE
A
A1 A2 7
F ZONE "J" SEATING PLANE
Y
Y
C
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 1337-01 ISSUE O TO-272 DUAL LEAD PLASTIC MRF9060MBR1
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1 11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/
MRF9060MR1 MRF9060MBR1 12
MOTOROLA RF DEVICE DATA
MRF9060M/D

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