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This document contains information on a new product. Specifications and information are subject to change without notice.
(c) Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data * Collector -Emitter Sustaining Voltage -- VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc * High DC Current Gain -- hFE = 100 Vdc (Min) @ IC = 1.0 Adc = 90 Vdc (Min) @ IC = 3.0 Adc * Low Collector -Emitter Saturation Voltage -- VCE(sat) = 0.235 Vdc (Max) @ IC = 1.2 Adc = 0.5 Vdc (Max) @ IC = 5.0 Adc * Miniature SO-8 Surface Mount Package - Saves Board Space
REV 1 Preferred devices are Motorola recommended choices for future use and best overall value.
(1) Mounted on 2" sq. FR-4 board (1" sq. 2 oz. Cu 0.06" thick single sided) with one die operating, 10 seconds max.
MARKING: 3N3BJT
SO-8 for Surface Mount Applications
Plastic Power Transistors
Preliminary Data Sheet
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Maximum Temperature for Soldering
Total Power Dissipation @ TA = 25_C(1) Derate above 25_C
Thermal Resistance - Junction to Ambient(1)
Operating and Storage Junction Temperature Range
Base Current -- Continuous
Collector Current -- Continuous Collector Current -- Peak
Emitter-Base Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Designed for general purpose amplifier and low speed switching applications.
Characteristic
Rating
ENG
E
E
B
B
Schematic
Symbol
Symbol
TJ, Tstg
VCEO
RJA
VCB
VEB
PD
TL
IC
IB
C
C
MMDJ3N03BJT
Emitter-2
Emitter-1
Base-2
Base-1
- 55 to + 150
DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES
CASE 751-05, Style 16 (SO-8)
Motorola Preferred Device
Value
8.0
62.5
Max
260
2.0 16
1.0
3.0 5.0
30
45
Top View Pinout
4
3
2
1
Order this document by MMDJ3N03BJT/D
5
6
7
8
Collector-2
Collector-2
Collector-1
Collector-1
Watts mW/_C
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
1
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MMDJ3N03BJT
SWITCHING CHARACTERISTICS(1) Resistive Load DYNAMIC CHARACTERISTICS ON CHARACTERISTICS(1) OFF CHARACTERISTICS
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) fT = |hFE| S ftest
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
2
Current-Gain -- Bandwidth Product(2) Input Capacitance (VEB = 8.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Base-Emitter On Voltage (IC = 2.0 Adc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 1.0 Adc) Collector-Emitter Saturation Voltage (IC = 1.2 Adc, IB = 20 mAdc) (IC = 5.0 Adc, IB = 1.0 Adc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0 Adc) Collector Cutoff Current (VCE = 25 Vdc) Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) Temperature Coefficient (Positive) Fall Time Storage Time Rise Time Delay Time (IC = 2.0 Adc, IB1 = IB2 = 30 mAdc, VCC = 10 Vdc) Characteristic
VCEO(sus)
VCE(sat)
VBE(sat)
VBE(on)
Symbol
Motorola Bipolar Power Transistor Device Data
ICEO IEBO Cibo Cob hFE td tr ts tf fT Min 100 90 -- -- -- -- tbd -- -- -- -- -- -- -- -- -- -- 0.130 -- 530 100 215 Typ 200 180 165 80 -- -- -- -- -- -- -- 60 0.235 0.500 Max 250 135 1.0 1.0 30 tbd 50 -- -- -- -- -- -- -- -- mAdc Adc V/C MHz Unit Vdc Vdc Vdc Vdc pF pF ns ns ns ns --
MMDJ3N03BJT
PACKAGE DIMENSIONS
-A- B
M 8 5 X 45 _
J
1 4
4X
-B-
M_ G F
NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50
P
0.25 (0.010)
M
-T-
8X
C
SEATING PLANE
D 0.25 (0.010)
M
K
TB
S
A
S
R
CASE 751-05 ISSUE P
STYLE 16: PIN 1. 2. 3. 4. 5. 6. 7. 8.
EMITTER, DIE #1 BASE, DIE #1 EMITTER, DIE #2 BASE, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #1 COLLECTOR, DIE #1
Motorola Bipolar Power Transistor Device Data
3
MMDJ3N03BJT
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
*MMDJ3N03BJT/D*
Motorola Bipolar Power Transistor Device Data MMDJ3N03BJT/D

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