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| GaAs INFRARED EMITTING DIODE LED55B PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) LED55C LED56 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 0.040 (1.02) 0.040 (1.02) 45 O0.020 (0.51) 2X 3 ANODE (Connected To Case) CATHODE 3 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 DESCRIPTION The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package. FEATURES * Good optical to mechanical alignment * Mechanically and wavelength matched to the TO-18 series phototransistor * Hermetically sealed package * High irradiance level 2001 Fairchild Semiconductor Corporation DS300312 6/05/01 1 OF 4 www.fairchildsemi.com GaAs INFRARED EMITTING DIODE LED55B ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 1s; 200Hz) Reverse Voltage Power Dissipation (TA = 25C)(1) Power Dissipation (TC = 25C)(2) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF IF VR PD PD LED55C Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 10 3 170 1.3 LED56 Unit C C C C mA A V mW W NOTE: 1. Derate power dissipation linearly 1.70 mW/C above 25C ambient. 2. Derate power dissipation linearly 13.0 mW/C above 25C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16" (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 # steradians. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25C) (All measurements made under pulse conditions) SYMBOL MIN TYP MAX UNITS Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power LED55B(7) Total Power LED55C(7) Total Power LED56(7) Rise Time 0-90% of output Fall Time 100-10% of output IF = 100 mA IF = 100 mA IF = 100 mA VR = 3 V IF = 100 mA IF = 100 mA IF = 100 mA !P " VF IR PO PO PO tr tf -- -- -- -- 3.5 5.4 1.5 -- -- 940 8 -- -- -- -- -- 1.0 1.0 -- -- 1.7 10 -- -- -- -- -- nm Deg. V A mW mW mW s s www.fairchildsemi.com 2 OF 4 6/05/01 DS300312 GaAs INFRARED EMITTING DIODE LED55B TYPICAL PERFORMANCE CURVES Figure 1. Power Output vs. Input Current 100 50 20 10 PO, NORMALIZED POWER OUTPUT 5 2 1.0 0.5 0.2 0.1 0.05 0.02 0.01 .001 .002 .005 .01 .02 .05 0.1 0.2 0.5 1.0 2 NORMALIZED TO I F = 100 mA TA = 25C LED55C LED56 PULSED PW = 80 sec FORWARD CURRENT CONTINUOUS FORWARD CURRENT 5 10 IF, FORWARD CURRENT (A) Figure 3. Forward Voltage vs. Forward Current Figure 2. Power Output vs. Temperature 1.4 1.2 PO, NORMALIZED POWER OUTPUT 2.0 1.0 0.8 0.6 0.4 0.2 0 NORMALIZED TO I F = 100 mA TA = 25C IF, FORWARD CURRENT (A) 0 25 50 75 100 125 150 .01 TA, AMBIENT TEMPERATURE (C) 0 1 2 3 4 5 6 7 8 9 10 1.0 0.8 0.6 0.4 0.2 0.1 .08 .06 .04 .02 -50 -25 10 8.0 6.0 4.0 VF, FORWARD VOLTAGE (V) Figure 4. Forward Voltage vs. Forward Current 100 80 60 40 IF, FORWARD CURRENT (mA) 20 TA = 100C 10 8 6 4 25C -55C RELATIVE OUTPUT (%) 100 Figure 5. Typical Radiation Pattern 80 60 40 2 1 20 .9 1.0 1.1 1.2 1.3 1.4 1.5 0 -50 -40 -30 -20 -10 0 10 20 30 40 50 VF, FORWARD VOLTAGE (V) - ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES) DS300312 6/05/01 3 OF 4 www.fairchildsemi.com GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 4 OF 4 6/05/01 DS300312 |
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