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T R I Q U I N T S E M I C ON D U C TO R, I N C. TGL8784-SCC Analog Attenuator q q q q q q PHOTO ENLARGEMENT 2 to 20 -GHz Frequency Range 2-dB Insertion Loss at Midband 10-dB Input/Output Return Loss 13-dB Variable Attenuation Range Single Polarity Power Supply Required 8784 1,702 x 1,219 x 0,152 mm (0.067 x 0.048 x 0.006 in.) DESCRIPTION The TriQuint TGL8784 -SCC is a monolithic variable attenuator which operates from 2 to 20 -GHz. This analog attenuator can operate from a single +2.5 v olt power supply if used with an external variable voltage divider circuit. Typical RF performance at 10 -GHz is: Insertion Loss 2- dB, Maximum attenuation: 15 - dB at 10 - GHz, input and output return loss: better than 10 - dB. DC blocking capacitors are provided on-chip. The TGL8784-SCC is an absorptive attenuator designed using MESFET technolog y employing a "PI" configuration which reduces bias cur rents and simplifies bias networ ks. The broadband capabilities of this device are versatile in many applications such as telecommunications, military, and space. This device has a space heritage. Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment methods as well as thermocompression and thermosonic wire -bonding processes. The TGL8784 SCC is supplied in chip for m and is readily assembled using automated equipment. Groun d is provided to the circuitr y through vias to the backside metallization. TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGL8784-SCC TYPICAL ATTENUATION VS CONTROL VOLTAGE +VC 0 2 4 +VCC = +2.5V TA = 25C Attenuation (dB) 6 8 10 12 14 16 2 4 6 8 10 12 14 16 18 20 Attenuation Control Voltage +VC: 0.00 0.75 1.00 1.25 1.50 1.75 2.00 2.50 V V V V V V V V Frequency (GHz) TYPICAL INSERTION LOSS VS TEMPERATURE 0.0 +VCC = +2.5V +VC = 0V 0.5 Insertion Loss (dB) 1.0 1.5 Base Plate Temperature: 2.0 -55 C -25 C 0C +25C +55C +125C 2.5 3.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Input Power (dBm) TYPICAL INPUT POWER AT 1 dB ATTENUATION CHANGE VS +VC P1dB +VCC = +2.5V TA = 25C 20 15 25 10 30 5 2 GHz 10 GHz 0 0.00 1.00 1.25 1.50 1.75 2.00 2.50 18 GHz +VC Control Voltage (Volts) Recommended Maximum PIN is 24dBm. P1dB data taken at control voltages (+VC) listed at major division points on graph only . TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 2 TGL8784-SCC TYPICAL INPUT POWER AT 1 dB ATTENUATION CHANGE VS TEMPERATURE 28 +VC C= +2.5V +VC = 0V 25 22 P1dB (dBm) 19 16 2 GHz 10 GHz 18 GHz 13 10 -55 -25 0 +25 +55 +125 Temperature (C) TYPICAL INTPUT RETURN LOSS 10 12 +VC = +2.5V TA = 25C Input Return Loss (dB) 14 16 18 20 22 24 26 2 4 6 8 10 12 14 16 18 20 Attenuation (+VC): 0.00V 0.75V 1.00V 1.25V 1.50V 1.75V 2.00V 2.50V Frequency (GHz) TYPICAL OUTTPUT RETURN LOSS 10 12 +VC = +2.5V TA = 25C Output Return Loss (dB) 14 16 18 20 22 24 26 2 4 6 8 10 12 14 16 18 20 Attenuation (+VC): 0.00V 0.75V 1.00V 1.25V 1.50V 1.75V 2.00V 2.50V Frequency (GHz) TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 3 TGL8784-SCC TYPICAL INSERTION PHASE VS +VC 0 -20 -40 +V = +2.5V TA = 25C S21 Phase - (deg) -60 -80 -100 -120 -140 -160 -180 -200 0.00 0.75 1.00 1.25 1.50 1.75 2.00 2.50 2 GHz 10 GHz 18 GHz +VC Control Voltage (Volts) ABSOLUTE MAXIMUM RATINGS Positive Supply voltage, + VCC ................................................................................................................ 10 V Attenuation control voltage, + VC , (+VCC > +VC) ...................................................................... 0 V to +10 V Input continuous wave power, PIN .................................................................................................... 24 dBm Operating channel temperature, TCH* .......................................................... ...................................... 150 C Mounting temperature (30 sec), TM .................................................................................................. 320 C Storage temperature range, TSTG ...............................................................................................- 65 to 150 C Ratings o ver operating channel temperature range, TCH (unless otherwise noted) Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the de vice. These are stress ratings only, and functional operation of the de vice at these or an y other conditions beyond those indicated under "RF Characteristics" is not implied. E xposure to absolute maximum rated conditions for extended periods may affect device reliability. * Operating channel temperature directly affects the de vice MTTF. For maximum life, it is recommended that channel temperature be maintained at the low est possible level. TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 4 TGL8784-SCC TYPICAL S-PARAMETERS Insertion Loss Frequency (GHz) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 dB -15.34 -14.92 -14.78 -14.50 -14.16 -13.84 -13.53 -13.28 -13.05 -12.84 -12.70 -12.52 -12.47 -12.37 -12.35 -12.37 -12.44 -12.49 -12.60 -12.70 -12.84 -13.03 -13.26 -13.54 -13.87 -14.31 -14.78 -15.32 -15.75 -16.23 -16.73 -17.44 -18.18 -19.00 -19.94 -20.86 -22.03 -23.40 -25.21 -27.33 -29.25 S11 ANG() -70.1 -75.4 -81.8 -87.0 -92.0 82.1 77.2 72.6 68.1 63.8 59.5 55.4 51.8 48.2 45.1 41.2 37.9 34.2 31.1 27.8 24.6 21.2 17.7 14.1 -169.7 -173.8 -177.7 178.8 174.6 169.7 164.4 158.9 154.2 149.2 144.8 141.8 138.4 136.5 135.6 136.2 143.4 dB -1.29 -1.31 -1.34 -1.37 -1.41 -1.44 -1.48 -1.52 -1.55 -1.59 -1.63 -1.66 -1.69 -1.72 -1.74 -1.77 -1.79 -1.81 -1.83 -1.85 -1.86 -1.88 -1.90 -1.92 -1.94 -1.96 -1.97 -1.99 -2.02 -2.05 -2.07 -2.09 -2.12 -2.14 -2.16 -2.20 -2.21 -2.24 -2.27 -2.29 -2.33 S21 ANG() -18.0 -23.1 -28.1 -32.8 -37.5 -42.1 -46.7 -51.2 -55.6 -60.1 -64.5 -68.9 -73.2 -77.6 -82.0 -86.4 -90.8 -95.2 -99.7 -104.1 -108.6 -113.0 -117.6 -122.1 -126.6 -131.1 -135.8 -140.4 -145.1 -149.7 -154.4 -159.1 -163.9 -168.7 -173.6 -178.4 176.7 171.7 166.6 161.4 156.2 dB -1.29 -1.31 -1.35 -1.37 -1.41 -1.45 -1.48 -1.52 -1.55 -1.59 -1.63 -1.66 -1.69 -1.72 -1.74 -1.77 -1.79 -1.82 -1.83 -1.85 -1.86 -1.88 -1.90 -1.93 -1.94 -1.96 -1.97 -1.99 -2.02 -2.05 -2.07 -2.10 -2.12 -2.14 -2.17 -2.20 -2.22 -2.24 -2.25 -2.30 -2.33 S12 ANG() -17.9 -23.1 -28.1 -32.8 -37.5 -42.1 -46.6 -51.1 -55.6 -60.1 -64.5 -68.8 -73.2 -77.6 -82.0 -86.4 -90.8 -95.2 -99.6 -104.1 -108.6 -113.1 -117.6 -122.1 -126.6 -131.2 -135.8 -140.4 -145.1 -149.7 -154.4 -159.1 -163.9 -168.7 -173.6 -178.4 176.7 171.7 166.6 161.4 156.2 dB -15.26 -15.22 -14.88 -14.59 -14.43 -14.05 -13.80 -13.65 -13.47 -13.36 -13.22 -13.11 -13.13 -13.15 -13.22 -13.22 -13.30 -13.32 -13.46 -13.57 -13.71 -13.79 -13.92 -14.00 -14.05 -14.08 -14.18 -14.29 -14.33 -14.31 -14.25 -14.26 -14.37 -14.42 -14.55 -14.73 -15.13 -15.52 -15.87 -16.28 -16.73 S22 ANG() -70.5 -77.4 -83.1 -88.8 -94.7 79.3 73.9 68.3 62.8 57.6 53.1 47.7 43.4 38.3 33.6 29.2 25.2 20.9 16.8 12.5 8.7 4.9 1.0 -2.3 174.4 171.5 169.0 166.4 163.5 160.2 156.6 153.2 149.9 146.8 143.8 140.8 138.4 136.0 133.3 131.1 128.7 TA = 25C, +VCC = +2.5 V, +VC = 0 V Reference planes for S -parameter data include bond wires as specified in the "Recom mended Assembly Diagram." TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 5 TGL8784-SCC TYPICAL S-PARAMETERS Maximum Attenuation Frequency (GHz) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 dB -13.53 -13.90 -14.20 -14.55 -14.81 -14.94 -15.16 -15.36 -15.57 -15.77 -16.02 -16.23 -16.51 -16.77 -17.20 -17.55 -18.00 -18.37 -18.82 -19.32 -19.81 -20.40 -21.04 -21.75 -22.53 -23.52 -24.44 -25.71 -26.92 -27.98 -29.13 -30.24 -31.56 -32.76 -34.78 -36.56 -38.64 -45.80 -53.20 -43.52 -39.20 S11 ANG() -140.0 -146.6 -153.5 -157.9 -161.5 14.8 12.4 9.8 7.3 5.5 3.7 2.1 0.7 -0.8 -2.0 -3.7 -5.3 -7.1 -8.4 -9.5 -10.7 -12.2 -13.5 -15.4 162.7 160.3 157.4 155.1 151.0 148.4 144.4 140.6 135.1 129.4 124.1 125.8 119.2 100.5 6.6 -44.2 -62.3 dB -14.51 -14.64 -14.72 -14.76 -14.81 -14.84 -14.86 -14.89 -14.89 -14.91 -14.93 -14.94 -14.94 -14.95 -14.95 -14.95 -14.95 -14.95 -14.93 -14.94 -14.92 -14.91 -14.90 -14.90 -14.87 -14.85 -14.84 -14.82 -14.84 -14.84 -14.82 -14.78 -14.75 -14.73 -14.69 -14.66 -14.58 -14.56 -14.53 -14.47 -14.48 S21 ANG() -24.0 -26.0 -28.4 -31.0 -33.8 -36.6 -39.6 -42.7 -45.8 -48.9 -52.2 -55.5 -58.7 -62.1 -65.4 -68.9 -72.2 -75.7 -79.3 -82.7 -86.3 -89.9 -93.4 -97.0 -100.6 -104.2 -107.9 -111.7 -115.4 -118.9 -122.4 -126.0 -129.8 -133.5 -137.3 -141.0 -144.8 -148.7 -152.9 -157.0 -161.1 dB -14.51 -14.64 -14.72 -14.77 -14.81 -14.84 -14.86 -14.88 -14.90 -14.92 -14.93 -14.94 -14.94 -14.95 -14.95 -14.96 -14.95 -14.94 -14.94 -14.93 -14.92 -14.91 -14.91 -14.90 -14.87 -14.86 -14.83 -14.82 -14.83 -14.85 -14.82 -14.79 -14.75 -14.72 -14.68 -14.65 -14.59 -14.57 -14.50 -14.50 -14.47 S12 ANG() -24.0 -26.0 -28.4 -31.0 -33.7 -36.6 -39.6 -42.7 -45.8 -49.0 -52.2 -55.4 -58.7 -62.1 -65.4 -68.9 -72.3 -75.7 -79.2 -82.7 -86.3 -89.9 -93.4 -97.1 -100.5 -104.3 -107.9 -111.7 -115.5 -118.9 -122.5 -126.0 -129.8 -133.5 -137.3 -141.1 -144.8 -148.8 -152.9 -157.0 -161.1 dB -13.82 -14.30 -14.59 -14.94 -15.28 -15.42 -15.70 -15.91 -16.07 -16.30 -16.58 -16.68 -17.01 -17.13 -17.29 -17.40 -17.60 -17.66 -17.84 -17.93 -18.12 -18.19 -18.22 -18.26 -18.33 -18.37 -18.52 -18.75 -18.96 -19.02 -19.00 -19.03 -19.27 -19.44 -19.73 -20.11 -20.73 -21.31 -22.01 -22.83 -23.56 S22 ANG() -143.7 -152.4 -158.5 -163.2 -167.9 8.5 5.5 2.0 -1.0 -3.9 -5.8 -8.3 -10.4 -13.3 -16.0 -17.7 -20.1 -22.1 -24.7 -27.1 -29.5 -31.9 -34.3 -36.7 141.2 139.6 137.6 135.3 132.9 131.0 128.9 127.1 124.7 123.0 121.5 120.3 119.2 117.4 114.7 114.2 113.7 TA = 25C, +VCC = 2.5 V, +VC =2.5 V Reference planes for S -parameter data include bond wires as specified in the "Recom mended Assembly Diagram." 6 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGL8784-SCC RF CHARACTERISTICS IL PARAMETER TEST CONDITIONS TYP UNIT Insertion Loss f=2.0 GHz , +Vc=0V f=10.0 GHz , +Vc=0V f=20.0 GHz , +Vc=0V 1.5 2.0 2.5 15 10 10 * dB dB dB dB dB dB dBm Maximum Attenuation IRL ORL P1dB Input Return Loss Output Return Loss Input Power at 1dB Atten. Change f=2 to 20 GHz, +Vc=+2.5V 2.0 to 20 GHz 2.0 to 20 GHz 2,10 and 18 GHz * P1dB varies depending on +VC setting and frequency. See graph on page 2 for details. +VCC =2.5 V, +VC = 0.0 V, TA = 25C unless stated THERMAL INFORMATION RJC PARAMETER Thermal resistance, channel to backside TEST CONDITIONS 70C Base,+VCC=+2.5V,+VC=+2.5V * NOM 300 UNIT C/W * Thermal Resistance analysis based on Max PIN=24 dBm and +VC set for maximum attenuation. Power dissipation in Q1 is 135mW which represents a wor st-case condition. 7 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGL8784-SCC EQUIVALENT SCHEMATIC RFIN Q3 150um RFOUT Q1 100um Q2 100um +VC 0V +VCC RECOMMENDED ASSEMBLY DIAGRAM RF Input RF Input RF Output RF Output 100 pF 150pF 100 pF 150pF +V +Vc C +VCC +Vcc Bond using two 1.0-mil diameter, 25 to 30-mil length gold bond wires at both RF Input and RF Output for optimum perfor mance. Close placement of exter nal components is essential. 8 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGL8784-SCC MECHANICAL DRAWING 1,2192 (0.0480) 0,5563 (0.0219) 1 2 0,5563 (0.0219) 0,1296 (0.0051) 0.0 0.0 0,1372 (0.0054) 3 4 5 0,7595 0,8611 1,0871 (0.0428) (0.0339) (0.0299) 1,5646 1,7018 (0.0616) (0.0670) Units: millimeters (inches) Thickness: 0,1524 (0.006) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad. Chip size 0,0508 (0.002) Bond Bond Bond Bond Bond pad pad pad pad pad #1 #2 #3 #4 #5 (RF Input): (RF Output): (+V C , Attenuation Control): (0V): (+VCC): 0,0960 x 0,2000 (0.0038 x 0.0079) 0,0960 x 0,2000 (0.0038 x 0.0079) 0,0960 x 0,0960 (0.0038 x 0.0038) 0,0960 x 0,0960 (0.0038 x 0.0038) 0,0960 x 0,0960 (0.0038 x 0.0038) TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 9 |
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