 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. * * * * Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resistor Values C R1 R1: 47 k (Q1, Q2 commom) E B Maximum Ratings (Ta = 25C) (Q1, Q2 commom) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC (Note) Tj Tstg 150 -55 to 150 C C Rating 50 50 5 100 200 Unit V V V mA mW Note: Total rating 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-03-23 1/3 RN1973 Electrical Characteristics (Ta = 25C) (Q1, Q2 commom) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input resistor Symbol ICBO IEBO hFE VCE (sat) R1 Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 1 mA IC = 5 mA, IB = 0.25 mA 32.9 Min 120 Typ. 0.1 47 Max 100 100 700 0.3 61.1 V k Unit nA nA Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 XXP Q1 Q2 1 2 3 1 2 3 2000-03-23 2/3 RN1973 (Q1, Q2 common) IC - VI (ON) 3000 50 IC - VI (OFF) (mA) (A) 30 Ta = 100C 10 25 5 3 -25 1000 Ta = 100C 25 -25 Collector current IC Collector current IC Common emitter 500 300 100 Common emitter VCE = 5 V 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 0.5 0.3 0.1 0.3 0.5 1 3 5 10 VCE = 0.2 V 30 50 100 50 30 0 Input voltage VI (ON) (V) Input voltage VI (OFF) (V) hFE - IC 3000 Common emitter 1000 Ta = 100C VCE = 5 V 3 Common emitter IC/IB = 20 1 0.5 0.3 VCE (sat) - IC 500 300 -25 25 100 50 30 Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE 0.1 0.05 0.03 Ta = 100C 25 -25 10 0.1 0.3 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) 2000-03-23 3/3 |
Price & Availability of RN1973
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |