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| FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET August 2005 FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features 13 A, 30 V RDS(ON) = 9m @ VGS = 10 V RDS(ON) = 12m @ VGS = 4.5 V Low gate charge (10nC @ VGS = 5 V) Very low Miller Charge (3nC) Low Rg (1 Ohm) RoHS Compliant Applications Control Switch for DC-DC Buck converters Notebook Vcore Telecom / Networking Point of Load D D SO-8 D D DD D D 5 6 4 3 2 1 Pin 1 SO-8 G SG S S SS S 7 8 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings 30 20 13 50 3.0 1.2 -55 to +150 Units V V A W o C Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) 50 125 25 o C/W C/W oC/W o Package Marking and Ordering Information Device Marking FDS6298 Device FDS6298 Reel Size 13inch 1 Tape Width 12mm Quantity 2500 units FDS6298 Rev. C (W) (c)2005 Fairchild Semiconductor Corporation FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, ID = 250A, VGS = 0V ID = 250A, Referenced to 25C VGS = 0V, VDS = 24V VGS = 20V, VDS = 0V 30 30 1 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ RDS(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250A ID = 250A, Referenced to 25C ID = 13A, VGS = 10V ID = 12A, VGS = 4.5V ID = 13A, VGS = 10V, TJ = 125C ID = 13A, VDS = 10V 1 1.7 -5 7.4 9.4 11 58 3 9 12 15 S m V mV/C Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz VGS = 15mV, f = 1MHz, 0.3 1108 310 109 1 1.7 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 15V, ID = 13A, VGS = 5V VDD = 15V, ID = 1A VGS = 10V, RGEN = 6 11 5 27 7 10 3 3 20 10 43 14 14 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings VSD trr Qrr Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 50oC/W when mounted on a 1in2 pad of 2 oz copper b) 125oC/W whe mounted on a minimum pad Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS = 2.1 A (Note 2) IF= 13A, dIF/dt=100A/s - 0.74 27 13 1.2 - V ns nC Scale 1: 1 on letter size paper 2. Test: Pulse Width < 300 s, Duty Cycle < 2.0% 2 FDS6298 Rev. C (W) FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET Typical Characteristics 80 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 4.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 2.5 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 6.0V 3.5.V VGS = 3.0V 3.5V 4.0V 4.5V 5.0V 6.0V 10V 3.0V 0 10 20 30 40 50 60 70 80 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 0.028 RDS(ON), ON-RESISTANCE (OHM) ID = 13A VGS = 10V ID = 6.5A 0.024 0.02 0.016 TA = 125 C 0.012 0.008 0.004 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) o TA = 25oC -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55 C 125o o 100 VGS = 0V 10 1 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC 25oC Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3 FDS6298 Rev. C (W) FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13A 8 20V 6 CAPACITANCE (pF) VDS = 10V 15V 1200 1500 CISS f = 1MHz VGS = 0 V 900 4 600 COSS 300 CRSS 2 0 0 4 8 12 16 20 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics Figure 9. Maximum Safe Operation Area Figure 10. Single Pulse Maximum Power Dissipation Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 FDS6298 Rev. C (W) FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 5 FDS6298 Rev. C (W) |
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