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| BIDITM Transceiver Optical Module TM 1300 nm Emitting-/1550 nm Receiving Function, High Power SBH 51414X * * * * * * Designed for application in passive-optical networks Integrated Wavelength Division Multiplexer Bidirectional Transmission in 2nd and 3rd optical window Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary Photodiode at rear mirror for monitoring and control of radiant power * Low noise/high bandwidth PIN diode * Hermetically sealed subcomponents, similar to TO 18 * With singlemode fiber pigtail Type SBH 51414A SBH 51414G Ordering Code Q62702-Pxxxx Q62702-Pxxxx Connector DIN FC / PC Component with other connector types on request. Maximum Ratings Output power ratings refer to the optical port. The operating temperature of the submount is identical to the case temperature. Parameter Module Operating temperature range at case Storage temperature range Soldering temperature tmax = 30 s, 2 mm distance from bottom edge of case Laser Diode Forward current Radiant power CW Reverse voltage Symbol Values Unit TC Tstg TS - 40 ... + 85 - 40 ... + 85 260 C C C IF max e 150 4 2 mA mW V VR max Semiconductor Group 192 02.95 SBH 51414X Maximum Ratings (cont'd) Parameter Monitor Diode Forward current Reverse voltage PIN Photodiode Forward current Reverse voltage Maximum optical power into the optical port Characteristics All optical data refer to the optical port, TC = 25 C. Parameter Laser Diode Optical output power Emission wavelength center of range e = 1 mW Spectral bandwidth e = 1 mW (RMS) Threshold current (- 40 ... + 85 C) Forward voltage e = 1 mW Radiant power at Ith Current above threshold at 25 C, e = 2 mW Current above threshold, e = 2 mW Variation of 1st derivative of P/I (0.2 ... 2.0 mW) Differential series resistance Rise and fall time (10 % - 90 %) Temperature coefficient of wavelength e > 2.4 1270 ... 1350 5 2 ... 45 < 1.5 < 80 10 ... 35 7 ... 50 - 30 ... 30 <8 <1 < 0.5 mW nm nm mA V W mA mA % ns nm / K Symbol Values Unit Symbol Values Unit IF max VR max 2 10 mA V IF max VBR port max 2 10 1.5 mA V mW Ith VF eth IF IF dP/dI rS tr, tf TC Semiconductor Group 193 SBH 51414X Characteristics Parameter Monitor Diode Dark current, VR = 2 V, e = 0, TC = 85 C Photocurrent, VR = 2 V, e = 1 mW Capacitance, VR = 2 V, f = 1 MHz Tracking error, VR = 2 V (see note 1) Detector Dark current, VR = 2 V, e = 0, TC = 85 C Spectral sensitivity, VR = 2 V, = 1550 nm Capacitance, VR = 2 V, f = 1 MHz Rise and fall time, VR = 2 V, 10 % - 90 % Module Optical crosstalk (see note 2) Symbol Values Unit IR IP C2 TE 200 100 ... 1000 < 10 -1...1 nA A pF dB IR S C2 tr, tf < 50 > 0.65 < 1.5 <1 nA A/W pF ns CRT < - 47 dB Note 1: The tracking error TE is the variation rate of e at constant current Imon over a specified temperature range and relative to the reference point: Imon,re = Imon(T = 25 C, e = 1mW). Thus, TE is given by: TE[dB] = 10 x log e [TC ] - e [25 C] e [25 C] Note 2: Optical Crosstalk is defined as CRT = 10 x log(IDet,0/IDet,1) with: IDet,0 the photocurrent with e = 1 mW CW laser operation, VR = 2 V and IDet,1 the photocurrent without e, but 1 mW optical input power, = 1550 nm. Semiconductor Group 194 SBH 51414X Accompanying Information T = 25 C: T = 85 C: Threshold current, current above threshold for 2 mW output power, monitor current for 1 mW output power, peak wavelength. Threshold current, current above threshold for 2 mW output power, monitor current for 1 mW output power. End of Life Values Parameter Threshold current at T = 85 C Current above threshold, over full temperature range, at Imon,ref = Imon(T = 25 C, e = 2 mW, BOL) Tracking error (see note 1) Detector dark current, VR = 2 V, T = 85 C Monitor dark current, VR = 2 V, T = 85 C Symbol Values < 60 7 ... 70 Unit mA mA Ith IF TE IR IR - 1.5 ... 1.5 < 400 <1 dB nA A Fiber Pigtail Type: single mode, silica Parameter Mode field diameter Cladding diameter Mode field/cladding concentricity error Cladding non-circularity Mode field non-circularity Cut-off wavelength Jacket diameter Bending radius Tensile strength fiber/case Length Values 91 125 2 <1 <2 <6 > 1270 0.9 0.1 > 30 >5 1 0.2 Unit m m m % % nm mm mm N m Semiconductor Group 195 SBH 51414X Laser Diode Radiant Power in Singlemode Fiber Relative Radiant Power e = f() 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 0 5 10 15 20 100 90 Relative Optical Power 80 70 60 50 40 30 20 10 0 1306 1308 1310 1312 1314 Wavelength in nm Optical Power in mW Forward Current in mA Laser Forward Current IF = f(VF) Monitor Diode Dark Current IR = f(TA) port = 0, VR = 5 V 100 90 Forward Current in mA 80 70 60 50 40 30 20 10 0 0 0.4 0.8 1.2 1.6 Forward Voltage in V Dark Current in nA 1000 100 10 1 0.1 0.01 -50 0 50 100 Temperature in C Semiconductor Group 196 SBH 51414X Capacitance of PIN Diode C = f(VR) port = 0, f = 1 MHz Rel. Spectral Sensitivity of PIN Diode VR = 5 V 10 1 0.9 0.8 Capacitance in pF Sensitivity in A/W 0.1 1 10 100 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 0.1 Reverse Bias in V 0 1200 1400 1600 1800 Wavelength in nm 2000 Dark Current of PIN Diode IR = f(VR) IF = f(VF) Dark Current of PIN Diode IR = f(TA) port = 0, VR = 5 V 10 100 10 Dark Current in nA Dark Current in nA 1 1 0.1 0.1 0.01 0.01 0.001 0 5 10 15 20 Reverse Bias in V 0.001 -50 0 50 100 Ambient Temperature in C Semiconductor Group 197 SBH 51414X Package Outlines (Dimensions in mm) SBH 51414X Semiconductor Group 198 |
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