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| FDP8030L/FDB8030L November 1999 FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features * 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 V RDS(ON) = 0.0045 @ VGS = 4.5 V * Critical DC electrical parameters specified at elevated temperature * Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor * High performance trench technology for extremely low RDS(ON) * 175C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 20 (Note 1) (Note 1) Units V V A W WC C C 80 300 187 1.25 -65 to +175 275 Total Power Dissipation @# TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 0.8 62.5 C/W C/W 1999 Fairchild Semiconductor Corporation FDP8030L Rev C(W) Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VDD = 20 V, ID = 80 A Min Typ Max Units 1500 80 mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V 30 23 10 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, VGS = 4.5 V, ID = 80 A TJ=125C ID = 70 A VDS = 10 V ID = 80 A 1 1.5 -5 3.1 4.0 3.6 2 V mV/C 3.5 5.6 4.5 m ID(on) gFS VGS = 10 V, VDS = 10 V, 60 170 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 10500 2700 1650 pF pF pF Switching Characteristics tD(on) tr tD (off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, VGS = 4.5 V, RGS = 10 ID = 50 A, RGEN = 10 20 185 160 200 120 27 48 35 225 200 240 170 ns ns ns ns nC nC nC VDS = 15 V, ID = 80 A, VGS = 5 V Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD Notes: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, (Note 1) (Note 1) (Note 1) 80 300 1 1.3 A A V IS = 80 A FDP8030L Rev C(W) FDP8030L/FDB8030L Typical Characteristics 100 I D , DRAIN-SOURCE CURRENT (A) R DS(ON) , NORMALIZED 80 4.5V 3.5V DRAIN-SOURCE ON-RESISTANCE 3 3.0V 2.5 VGS = 2.5V 60 2 40 1.5 3.0V 3.5V 4.5V 6.0V 10V 2.5V 20 1 0.5 0 0 20 0 0.5 1 1.5 V DS , DRAIN-SOURCE VOLTAGE (V) 2 40 60 80 I D, DRAIN CURRENT (A) 100 120 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.01 ID = 40A RDS(ON), ON-RESISTANCE (OHM) 1.6 DRAIN-SOURCE ON-RESISTANCE ID = 80A VGS = 10V 1.4 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001 TA = 25oC TA = 125oC R DS(ON), NORMALIZED 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 T J, JUNCTION TEMPERATURE (C) 125 150 0 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 60 I S, REVERSE DRAIN CURRENT (A) V DS = 10V 50 I D, DRAIN CURRENT (A) 40 30 20 10 0 10 1 0.1 0.01 0.001 0.0001 TA = 125C 25C -55C T = -55C A 25C 125C V GS = 0V 0 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.4 1 2 3 V GS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP8030L Rev C(W) FDP8030L/FDB8030L Typical Characteristics 10 V GS , GATE-SOURCE VOLTAGE (V) 18000 ID = 80A 8 CAPACITANCE (pF) V DS = 5V 10V 15V 10000 C iss 6 5000 C oss 2000 4 2 1000 VGS = 0V C rss 0 0 40 80 120 160 Q g, GATE CHARGE (nC) 200 240 500 0.1 0.5 1 2 5 10 V DS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 600 300 I D, DRAIN CURRENT (A) R (ON DS 5000 it Lim ) 100 s 1ms 10 ms 100 ms DC 4000 POWER (W) 100 50 20 10 5 2 1 0.5 0.3 SINGLE PULSE R JC = 0.8C/W TC = 25C 3000 2000 VGS = 10V SINGLE PULSE RJC = 0.8 C/W TC = 25 C 1 3 5 10 20 V DS , DRAIN-SOURCE VOLTAGE (V) 30 50 1000 0 0.1 0.3 1 3 10 30 100 SINGLE PULSE TIME (mSEC) 300 1,000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 0.1 0.05 0.03 0.02 D = 0.5 r(t), NORMALIZED EFFECTIVE 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) RJC (t) = r(t) * RJC RJC = 0.8 C/W t1 t2 T - TC = P * R JC (t) J Duty Cycle, D = t 1 /t 2 0.005 0.01 0.05 0.1 0.5 1 5 t1 ,TIME (ms) 10 50 100 500 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDP8030L Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D |
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