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| RHRD6120, RHRD6120S Data Sheet January 2000 File Number 3981.1 6A, 1200V Hyperfast Diodes The RHRD6120 and RHRD6120S are hyperfast diodes with soft recovery characteristics (trr < 55ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. Formerly development type TA49058. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RHRD6120 RHRD6120S PACKAGE TO-251 TO-252 BRAND HR6120 HR6120 Packaging JEDEC STYLE TO-251 ANODE CATHODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252 variant in tape and reel, i.e., RHRD6120S9A. Symbol K JEDEC STYLE TO-252 CATHODE (FLANGE) A CATHODE ANODE Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRD6120, RHRD6120S 1200 1200 1200 6 12 60 50 10 -65 to 175 300 260 UNITS V V V A A A W mJ oC oC oC Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 130oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 1 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 RHRD6120, RHRD6120S Electrical Specifications SYMBOL VF IF = 6A IF = 6A, TC = 150oC IR VR = 1200V VR = 1200V, TC = 150oC trr IF = 1A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = Pulse Width. D = Duty Cycle. IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s VR = 10V, IF = 0A TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 33 22 210 22 MAX 3.2 2.6 100 500 55 65 3 UNITS V V A A ns ns ns ns nC pF oC/W Typical Performance Curves 30 IR , REVERSE CURRENT (A) 500 175oC IF, FORWARD CURRENT (A) 100 10 10 100oC 1 175oC 1 0.5 0 1 100oC 25oC 0.1 25oC 0.01 2 VF , FORWARD VOLTAGE (V) 3 4 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 RHRD6120, RHRD6120S Typical Performance Curves 60 TC = 25oC, dIF/dt = 200A/s 50 t, RECOVERY TIMES (ns) 40 30 ta 20 10 0 0.5 tb t, RECOVERY TIMES (ns) 80 (Continued) 100 TC = 100oC, dIF/dt = 200A/s trr 60 trr 40 ta 20 tb 1 IF, FORWARD CURRENT (A) 6 0 0.5 1 IF, FORWARD CURRENT (A) 6 FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT TC = 175oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) 100 IF(AV) , AVERAGE FORWARD CURRENT (A) 125 6 5 DC 4 SQ. WAVE 3 2 1 0 100 75 trr 50 ta 25 tb 0 0.5 1 IF , FORWARD CURRENT (A) 6 115 130 145 160 175 TC , CASE TEMPERATURE (oC) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 100 CJ , JUNCTION CAPACITANCE (pF) 80 60 40 20 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 3 RHRD6120, RHRD6120S Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 8. trr TEST CIRCUIT IMAX = 1A L = 20mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV FIGURE 9. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 4 |
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