|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 File Number 2436.4 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09834. Features * 30A, 50V * rDS(ON) = 0.065 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFG30P05 RFP30P05 RF1S30P05SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG30P05 RFP30P05 F1S30P05 Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., RF1S30P05SM9A. S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE 4-126 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE(R) is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFG30P05, RFP30P05, RF1S30P05SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG30P05, RFP30P05 RF1S30P05SM -50 -50 20 30 Refer to Peak Current Curve 120 0.8 Refer to UIS Curve -55 to 175 300 260 UNITS V V V A W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) t(ON) td(ON) tr td(OFF) tf t(OFF) Qg(TOT) Qg(-10) Qg(TH) CISS COSS CRSS RJC RJA TO-220, TO-263 TO-247 VGS = 0 to -20V VGS = 0 to -10V VGS = 0 to -2V VDS = -25V, VGS = 0V f = 1MHz (Figure 12) VDD = -40V, ID = 30A, RL = 1.33, IG(REF) = 1.6mA TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, TC = 150oC Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient VGS = 20V ID = 30A, VGS = -10V (Figure 9) VDD = -25V, ID = 15A, RL = 1.67, VGS = -10V, RG = 6.25 (Figure 13) MIN -50 -2 TYP 15 23 28 18 140 70 5.5 3200 800 175 MAX -4 -1 -25 100 0.065 80 100 170 85 6.6 1.25 62 30 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W oC/W Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 300s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL VSD trr TEST CONDITIONS ISD = -30A ISD = -30A, dISD/dt = -100A/s MIN TYP MAX -1.5 150 UNITS V ns 4-127 RFG30P05, RFP30P05, RF1S30P05SM Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID , DRAIN CURRENT (A) 0 25 50 75 100 125 150 175 -30 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) Unless Otherwise Specified -40 -20 -10 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 1 THERMAL IMPEDANCE ZJC, NORMALIZED 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 100 101 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE -200 -100 ID , DRAIN CURRENT (A) 100s IDM , PEAK CURRENT (A) -500 VGS = -20V VGS = -10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 175 - T C I = I 25 -------------------- 150 1ms -100 -10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VDSS MAX = -50V -1 -1 TC = 25oC -10 VDS , DRAIN TO SOURCE VOLTAGE (V) 10ms 100ms DC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION -10 10-5 -100 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY 4-128 RFG30P05, RFP30P05, RF1S30P05SM Typical Performance Curves -100 IAS , AVALANCHE CURRENT (A) STARTING TJ = 25oC ID, DRAIN CURRENT (A) Unless Otherwise Specified (Continued) -75 VGS = -20V VGS = -10V -60 VGS = -8V VGS = -7V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = -6V -15 VGS = -5V VGS = -4.5V 0 -2 -4 -6 -8 -10 -45 -10 STARTING TJ = 150oC -30 If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 0.1 1 10 tAV, TIME IN AVALANCHE (ms) 100 -1 0 VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) -75 -60 -45 -55oC 25oC 175oC NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = -15V 2 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -10V, ID = 30A 1.5 1 -30 0.5 -15 0 0 -2 -4 -6 -8 -10 VGS, GATE TO SOURCE VOLTAGE (V) 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID =-250A 2 ID = 250A 1.5 THRESHOLD VOLTAGE 1.5 NORMALIZED GATE 1 1 0.5 0.5 0 -80 -40 120 160 0 40 80 TJ , JUNCTION TEMPERATURE (oC) 200 0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-129 RFG30P05, RFP30P05, RF1S30P05SM Typical Performance Curves 4000 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS Unless Otherwise Specified (Continued) -50 VDD = BVDSS -37.5 RL = 1.67 IG(REF) = 1.6mA VGS = -10V -25 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS DRAIN SOURCE VOLTAGE 0 0 -5 -10 -15 -20 -25 VDS , DRAIN TO SOURCE VOLTAGE (V) 20 IG(REF) IG(ACT) GATE SOURCE VOLTAGE VDD = BVDSS -10 VGS, GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) -7.5 2000 -5 1000 COSS CRSS -12.5 -2.5 0 0 t, TIME (s) 80 IG(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0 + VDD VDD 0V VGS DUT tP IAS 0.01 IAS tP BVDSS VDS FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON td(ON) VDS RL VGS 0 tr 10% tOFF td(OFF) tf 10% VDD VGS RGS + VDS VGS 0 90% 90% DUT 10% 50% PULSE WIDTH 90% 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 4-130 RFG30P05, RFP30P05, RF1S30P05SM Test Circuits and Waveforms (Continued) VDS RL 0 VGS = -2V VGS Qg(TH) VDS VDD + -VGS Qg(-10) VDD Qg(TOT) 0 IG(REF) VGS = -10V DUT IG(REF) VGS = -20V FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS 4-131 RFG30P05, RFP30P05, RF1S30P05SM PSPICE Electrical Model .SUBCKT RFP30P05 2 1 3; REV 8/21/94 CA 12 8 3.23e-9 CB 15 14 3.23e-9 CIN 6 8 3.08e-9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD EBREAK 5 11 17 18 -77.3 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 4.60e-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 12 GATE 1 9 ESG 10 RSCL2 8 6 + 5 DRAIN 2 LDRAIN RSCL1 + 51 5 51 DPLCAP EBREAK ESCL 50 RDRAIN + 17 18 DBODY 11 EVTO 20 + 18 8 LGATE RGATE 6 VTO + 16 21 MOS1 DBREAK MOS2 RIN CIN 8 RSOURCE LSOURCE 7 3 SOURCE S1A 13 8 S1B CA EGS 14 13 S2A 15 S2B 13 + 6 8 EDS CB + 6 8 14 IT RBREAK 17 18 RVTO 19 VBAT + RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 39.85e-3 RGATE 9 20 2.34 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 2.56e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.81 - - ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/114,5))} .MODEL DBDMOD D (IS=4.7e-13 RS=1.31e-2 TRS1=1.39e-4 TRS2=-4.77e-6 CJO=2.85e-9 TT=8.81e-8) .MODEL DBKMOD D (RS=2.23e-1 TRS1=1.97e-3 TRS2=-2.37e-5) .MODEL DPLCAPMOD D (CJO=0.78e-9 IS=1e-30 N=10) .MODEL MOSMOD PMOS (VTO=-3.75 KP=10.83 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=9.08e-4 TC2=-1.72e-6) .MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.02e-5) .MODEL RSCLMOD RES (TC1=2.09e-3 TC2=5.88e-7) .MODEL RVTOMOD RES (TC1=-2.99e-3 TC2=1.40e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.4 VOFF=1.4) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.4 VOFF=3.4) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.2 VOFF=-3.8) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.8 VOFF=1.2) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. 4-132 RFG30P05, RFP30P05, RF1S30P05SM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-133 |
Price & Availability of RFP30P05 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |