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| PWRLITE LD1003S High Performance N-Channel POWERJFETTM with Schottky Diode Features Trench Power JFET with low threshold voltage Vth. Device fully "ON" with Vgs = 0.7V Optimum for "Low Side" Buck Converters Optimized for Secondary Rectification in isolated DC-DC Low Rg and low Cds for high speed switching No "Body Diode"; extremely low Cds Added Fast Recovery Schottky Diode in same package Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution. Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules DPAK Pin Assignments D 4 G 2 3 Case TO252 DPAK (LD1003S) (Surface Mount) 1 S N - Channel JFET And Schottky Diode Pin Definitions Pin Number 1 2, 4 3 Pin Name Gate Drain Source Pin Function Description Gate. Transistor Gate Drain. Transistor Drain Source. Transistor Source VDS (V) 24V Product Summary Rdson () 0.0045 ID (A) 50 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain-to-Source Avalanche Energy at 25C (VDD= 5VDC, IL=60APK, L=0.3mH, RG=100 ) Junction Temperature Storage Temperature Lead Soldering Temperature, 10 seconds Power Dissipation (Derated at 25C) Symbol VDS VGS VGD ID ID EAS TJ TSTG T PD Ratings 24 -10 -28 50 100 220 -55 to 150C -65 to 150C 260C 80 Units V V V A A mJ C C C W LD1003S.Rev 0.93 PR 12-04 Thermal Resistance Symbol RJA RJC Parameter Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case DPAK Ratings 80 1.6 Units C/W C/W Electrical Specifications (TA = +25C, unless otherwise noted.) The denotes a specification which apply over the full operating temperature range. Symbol Parameter Conditions Min. Static BVDSX Breakdown Voltage ID = 0.5 mA 24 Drain to Source VGS= -4 V BVGDO Breakdown Voltage IG = -50A Gate to Drain BVGSO Breakdown Voltage IG = -1 mA Gate to Source RDS(ON) Static Drain to Source1 On IG = 40 mA, ID=10A Resistance (Current flows IG = 10 mA, ID=10A drain-to-source) See Fig. 1 IG = 5 mA, ID=10A VGS(TH) Gate Threshold Voltage -1200 VDS=0.1 V, ID=250A Dynamic QG Total Gate Charge VDrive =5V, ID=10A,VDS=15V QGD Gate to Drain Charge QGS Gate to Source Charge QSW Switching Charge RG Gate Resistance TD(ON) Turn-on Delay Time VDD=16V, ID=15A TR Rise Time VDrive = 5 V TD(OFF) Turn-off Delay Clamped Inductive Load T Fall Time F Typ. Max. Units V -28 -12 3.0 3.5 3.6 -800 23 14 1.8 15 0.5 5 12 2 10 3200 900 2250 750 150 -10 4.0 5.5 -600 V V m m mV nC nC nC nC ns CISS COSS CGS CGD CDS Input Capacitance Output Capacitance Gate-Source Capacitance Gate-Drain Capacitance Drain-Source Capacitance VDS=10V, VGS= -5 V, 1MHz. pF Schottky Diode IR Reverse Leakage VF Forward Voltage VF Forward Voltage VF Forward Voltage Qrr Reverse Recovery Charge Notes: 1. Pulse width <= 500s, duty cycle < = 2% VR=20V, Vgs = -4V IF = 1 A IF = 10 A IF = 20 A Is = 20 A di/dt = 100A/us, 0.25 300 700 900 8 0.3 mA mV mV mV nC 2 LD1003S Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com Product Specification Typical Operating Characteristics (TA = +25C, unless otherwise noted.) RDS(ID=-10A) vs IG, at Room Tem perature. 2 1 0 VGS(V) Total Gate Charge curves 0.0056 0.0054 0.0052 0.0050 0.0048 0.0046 0.0044 0.0042 0.0040 0.0038 0.0036 0.0034 0.0032 0.0030 0.001 0.010 IG(A) 0.100 1.000 RDS(Ohms ) -1 -2 -3 -4 -5 0 Capacitive Charges Region DC Charges Region 10 20 QtotG(nC) 30 40 50 Figure 1 - RDSON vs Gate Current at ID - 10A BVgs plot: Id vs Vds for Vgs=-4V 1.40E-03 1.20E-03 1.00E-03 Figure 2 - Total Gate Charge Capacitance vs VDS, VGS=-4V at Room Temp 3500 3000 2500 C(pF) Id(A) 8.00E-04 6.00E-04 4.00E-04 2.00E-04 0.00E+00 0 5 10 15 Vds(V) 20 25 30 2000 1500 1000 500 0 0 5 10 VDSV) Ciss Coss Crss 15 20 25 Figure 3 - Breakdown Voltage Vds vs Id IG vs VGS, Source and Drain Grounded. Drain Grounded. At Room Temperature Temperature 1.E-01 9.E-02 8.E-02 7.E-02 6.E-02 5.E-02 4.E-02 3.E-02 2.E-02 1.E-02 0.E+00 0.0 0.1 0.2 0.3 Figure 4 - Capacitance vs Drain Voltage Vds IG vs VGS, Drain Open Room Temp 5.0E-04 3.0E-04 1.0E-04 -1.0E-04 -3.0E-04 -5.0E-04 -7.0E-04 -9.0E-04 -1.1E-03 -1.3E-03 -14 -12 -10 -8 -6 VGSV) IG(A) IG(A) 0.4 0.4 VGS(V) VGS(V) 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 IG(A) -4 -2 0 2 Figure 5 - IG vs Gate Voltage VGS Figure 6 - Typical Gate Voltage Characteristic 3 Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1003S Product Specification Typical Operating Characteristics (TA = +25C, unless otherwise noted.) Normalized Rdson vs Temp at ID=-20A 2.00 Id, Drain Current (A) 25.0 20.0 IG=1mA 15.0 IG=5mA IG=10mA IG=20mA IG=40mA IG=100mA 5.0 1.90 Normalized Rdson 1.80 1.70 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0 20 40 60 80 Temp(C) 100 120 140 10.0 0.0 0 0.025 0.05 0.075 0.1 Vds, Drain-to-Source Voltage (V) Figure 7 - RDSON Temperature Coefficient ID vs VDS, Schottky Diode 0 -5 -10 -15 -20 -25 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 VDS(V) Figure 8 - On-Region Characteristics 100 Ig = 40mA Single Pulse Tc = 25C 10s Id, Drain Current (A) 100s 10 1ms Rdson Limit Thermal Limit Package Limit 1 0.1 1 10 100 Vds, Drain-to-Source Voltage (V) 10ms DC Figure 9 - Diode Voltage vs Current Total Pow er Dissipation (W) 100.00 80.00 60.00 40.00 20.00 0.00 0 50 100 Te m pe rature (C) 150 200 ID(A) Figure 10 - Safe Operating Area ZthJA = f(tp) (parameter D= tp/T) 1.E+00 D = 0.5 0.2 ZthJA (K/W) Ptot (W) 0.1 1.E-01 0.05 0.02 0.01 Single Pulse tp T P(pk) Note: 1. Duty Factor D = tp/T 2. Peak Tj = P(pk)*ZthJA + TA 1.E-02 1.E-05 1.E-04 1.E-03 1.E-02 tp (s) 1.E-01 1.E+00 1.E+01 Figure 11 - Total Power Dissipation 4 LD1003S Figure 12 - Normalized Thermal Response Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com Product Specification Ordering Information Product Number LD1003S PN Marking LD1003S Package TO252 (DPAK) Notes: This product is Pb-Free and has Tin Plated leads Package and Marking Information: DIMENSIONS DIM. A A1 A2 b b1 B2 C C2 D D1 E e H L2 L3 L4 R Alternate D L2 L3 H mm. TYP. MIN. 2.19 0.89 0.03 0.76 0.55 5.20 0.45 0.45 5.97 5.30 6.35 2.28 9.35 0.88 1.86 0.64 0.20 5.40 1.25 2.60 9.65 inch MAX. TYP. MIN. 2.40 0.086 1.14 0.035 0.13 0.001 1.14 0.030 0.90 0.022 5.46 0.205 0.60 0.017 0.58 0.017 6.22 0.235 0.208 6.73 0.250 0.090 10.42 0.368 1.27 0.035 3.57 0.073 1.02 0.025 0.008 5.60 1.75 2.80 9.75 0.213 0.049 0.102 0.380 MAX. 0.094 0.045 0.005 0.045 0.035 0.215 0.023 0.023 0.245 0.265 0.410 0.050 0.140 0.040 E B2 L2 A C2 H LD1003S XXXXX XXXX DPAK A2 A1 C L3 R e b b1 L4 D Back View 0.220 0.069 0.110 0.384 Life Support Policy LOVOLTECH's PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein: 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary No Identification Needed Product Status In definition or in Design Initial Production In Production Definition This datasheet contains the design specifications for product development. Specifications may change without notice. This datasheet contains preliminary data; additional and application data will be published at a later date. Lovoltech, Inc. reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Lovoltech reserves the right to make changes at any time without notice in order to improve the design. D1 Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1003S Product Specification 5 |
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