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| PD-94031A IRF7811W HEXFET(R) Power MOSFET for DC-DC Converters * * * * N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses S S 1 8 7 A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811W offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. S G 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811W RDS(on) QG Qsw Qoss 9.0m 18nC 5.5nC 12nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation TA = 25C TL = 90C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RJA RJL Max. 40 20 Units C/W C/W TJ, TSTG IS ISM TA = 25C TL = 90C IDM PD Symbol VDS VGS ID IRF7811W 30 12 14 13 109 3.1 3.0 -55 to 150 3.8 109 C A W A Units V 3/13/01 IRF7811W Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 30 150 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf Ciss Coss - - - (off) Min 30 Typ - 9.0 Max - 12 Units V m V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 15A VDS = VGS,I D = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100C VGS = 12V VGS=5.0V, ID=15A, VDS=16V VGS = 5V, VDS< 100mV VDS = 16V, ID = 15A Current* A nA Gate-Source Leakage Current Total Gate Chg Cont FET Total Gate Chg Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance 100 18 15.6 6.0 1.4 4.1 5.5 12 2.0 11 11 29 9.9 2335 400 119 - - - 24 nC VDS = 16V, VGS = 0 VDD = 16V, I D = 15A ns VGS = 5.0V Clamped Inductive Load pF VDS = 16V, VGS = 0 Reverse Transfer Capacitance Crss Source-Drain Rating & Characteristics Parameter Diode Forward Voltage* Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) VSD Qrr Qrr(s) 45 Min Typ Max 1.25 Units V nC Conditions IS = 15A, VGS = 0V di/dt ~ 700A/s VDS = 16V, VGS = 0V, IS = 15A 41 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A. 2 www.irf.com IRF7811W 2.0 ID = 15A 6.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 VGS, Gate-to-Source Voltage (V) ID = 15A VDS = 16V 4.0 1.0 2.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 0.0 0 4 8 12 16 20 TJ , Junction Temperature ( C) QG, Total Gate Charge (nC) Fig 1. Normalized On-Resistance Vs. Temperature Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage R DS(on) , Drain-to -Source On Resistance ( ) 0.020 4000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 3000 0.015 C, Capacitance(pF) Ciss 2000 ID = 15A 0.010 1000 Coss 0.005 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 Crss 0 1 10 100 VGS, Gate -to -Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 3. On-Resistance Vs. Gate Voltage Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com 3 IRF7811W 100 100 I D , Drain-to-Source Current (A) TJ = 150 C 10 ISD , Reverse Drain Current (A) TJ = 150 C 10 TJ = 25 C 1 TJ = 25 C 1 0.1 2.5 V DS = 15V 20s PULSE WIDTH 3.0 3.5 4.0 4.5 5.0 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Source-Drain Diode Forward Voltage 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 P DM 1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 0.1 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF7811W SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K 0 .10 (.00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) A1 M CASBS L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X SO-8 Part Marking www.irf.com 5 IRF7811W SO-8 Tape and Reel T E R M INA L NU M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IRE C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0 .0 0 (1 2 .9 92 ) M AX . 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) N O TES : 1 . CO N T R O L LIN G D IM E N S IO N : M ILL IM E T E R. 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 6 www.irf.com |
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