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| FDQ7698S August 2003 FDQ7698S Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package General Description The FDQ7698S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild's SyncFET TM technology. Features * Q2: 15 A, 30V. RDS(on) = 7.5 m @ VGS = 10V RDS(on) = 9 m @ VGS = 4.5V * Q1: 12A, 30V. RDS(on) = 12 m @ VGS = 10V RDS(on) = 16 m @ VGS = 4.5V 1 2 3 4 8 SO-14 Vin G1 G2 S2 S2 S2 5 6 7 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25 unless otherwise noted C Parameter Q2 30 16 (Note 1a) - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a & 1b) (Note 1c & 1d) 15 50 2.4 1.3 -55 to +150 Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) (Note 1c & 1d) 52 94 Package Marking and Ordering Information Device Marking FDQ7698S Device Reel Size 13" FDQ7698S Tape width 16mm (c)2002 Fairchild Semiconductor Corporation 14 13 Q1 12 11 10 Q2 9 8 Q1 30 16 12 50 1.8 1.1 Units V V A W C 68 118 C/W Quantity 2500 units FDQ7698S Rev C1 (W) FDQ7698S Electrical Characteristics Symbol BVDSS TA = 25 unless otherwise noted C Parameter Test Conditions Type Min Typ Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 50 50 80 38 4814 1324 842 300 321 98 1.5 1.2 16 10 14 12 90 28 32 11 43 12 8.5 3.6 11 3.7 30 20 30 22 28 Max Units V mV/C 500 10 100 100 -100 -100 A nA nA Off Characteristics BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA VGS = -5 V, ID = 1 mA VGS = 0 V, ID = 250 A Breakdown Voltage Temperature ID = 10 mA, Referenced to 25C Coefficient ID = 250 A, Referenced to 25C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) VGS = 16 V, VGS = -16 V, VDS = 0 V VDS = 0 V VGS(th) On Characteristics Gate Threshold Voltage VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A ID = 10 mA, Referenced to 25C ID = 250 A, Referenced to 25C VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 14 A VGS = 10 V, ID = 15 A, TJ = 125C VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 11 A VGS = 10 V, ID = 12 A, TJ = 125C VGS = 10 V, VDS = 5 V VDS = 10 V, VDS = 10 V, VDS = 15 V, f = 1.0 MHz ID = 15 A ID = 12 A VGS = 0 V, 1.17 1 1.3 1.3 -3 -6 5.3 6 7.7 9.4 12.6 17 3 3 V mV/C 7.5 9 12 12 16 21 m A S Ciss Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) pF pF pF Coss Crss RG VGS = 15 mVf = 1.0 MHz td(on) tr Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, VGS = 10V, ID = 1 A, RGEN = 6 td(off) tf Qg Qgs Qgd Q2 VDS = 15 V, ID = 15 A, VGS = 5 V Q1 VDS = 15 V, ID = 12 A,VGS = 5 V 29 20 25 22 144 45 51 20 60 17 nS nS nS nS nC nC nC FDS7698S Rev C1 (W) FDQ7698S Electrical Characteristics Symbol IS TA = 25 unless otherwise noted C Parameter Test Conditions Type Min Typ Q2 Q1 Q2 Q1 Q2 Q1 Max Units 3.5 2.1 0.7 1.2 nS nC nS nC A V Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A VGS = 0 V, IS = 2.1 A IF = 15A, diF/dt = 300 A/s IF = 12A, diF/dt = 100 A/s (Note 2) (Note 2) (Note 2) (Note 3) VSD trr Qrr trr Qrr NOTE : (Note 3) 0.4 0.5 0.7 26 29 25 14 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 68 C/W when mounted on a 1in2 pad of 2 oz copper (Q1). c) 118 C/W when mounted on a minimum pad of 2 oz copper (Q1). b) 52 C/W when mounted on a 1in2 pad of 2 oz copper (Q2). d) 94 C/W when mounted on a minimum pad of 2 oz copper (Q2). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% See "SyncFET Schottky diode characteristics" below. FDS7698S Rev C1 (W) FDQ7698S Typical Characteristics : Q2 70 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 VGS = 10V 60 ID, DRAIN CURRENT (A) 50 40 30 20 10 0 0 0.5 4.5V 3.0V 3.5V 2.5V 2 VGS = 2.5V 1.8 1.6 1.4 1.2 1 0.8 3.0V 3.5V 4.5V 6.0V 10V 1 1.5 2 0 10 20 30 40 50 60 70 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.016 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = 15A VGS =10V ID = 7.5A 0.014 0.012 1.4 1.2 TA = 125oC 0.01 0.008 0.006 0.004 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 1 0.8 TA = 25oC 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 70 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V 60 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 ID, DRAIN CURRENT (A) 50 40 30 20 10 0 1 1.5 2 2.5 3 1 TA = 125oC 25oC TA = 125oC 25oC -55 C o 0.1 0.01 -55oC 0.001 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7698S Rev C1 (W) FDQ7698S Typical Characteristics : Q2 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 15A 8 20V 6 VDS = 10V 15V 6400 5600 CAPACITANCE (pF) 4800 4000 3200 2400 1600 800 CISS f = 1MHz VGS = 0 V 4 COSS 2 0 0 10 20 30 40 50 60 70 80 90 Qg, GATE CHARGE (nC) CRSS 0 5 10 15 20 25 30 0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 1ms 10ms 100ms 10s 1s Figure 8. Capacitance Characteristics. 50 ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100us 40 SINGLE PULSE RJA = 94 C/W TA = 25 C 30 1 DC 20 0.1 VGS = 10V SINGLE PULSE RJA = 94oC/W TA = 25oC 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJC(t) = r(t) * RJC RJC = 94 C/W P(pk t1 t2 TJ - TC = P * RJC(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 0.01 SINGLE PULSE 0.001 0.0001 0.001 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1d. Transient thermal response will change depending on the circuit board design. FDS7698S Rev C1 (W) FDQ7698S Typical Characteristics : Q2 SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7698S Q2. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 TA = 125oC 0.01 TA = 100oC 0.001 TA = 25oC CURRENT : 0.8A/div 0.0001 0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIME : 12.5ns/div Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDQ7698S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6676). Additional SyncFET Characteristics 34 V DS, DRAIN TO SOURCE VOLTAGE (V) 32 30 28 26 24 22 20 0 1 2 3 4 ID = 10mA CURRENT : 0.8A/div 5 6 -VGS, GATE TO SOURCE VOLTAGE (V) TIME : 12.5ns/div Figure 13. Non-SyncFET (FDS6676) body Diode reverse recovery characteristic. Figure 15. SyncFET Drain to Source Voltage Variation With Negative Gate to Source Bias. FDS7698S Rev C1 (W) FDQ7698S Typical Characteristics: Q1 50 ID, DRAIN CURRENT (A) 40 6.0V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 3.5.V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 4.0V 4.5V 5.0V 6.0V 10V VGS = 3.5V 30 20 3.0V 10 2.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 16. On-Region Characteristics. Figure 17. On-Resistance Variation with Drain Current and Gate Voltage. 0.032 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 12A VGS = 10V ID = 6A 0.028 0.024 0.02 0.016 0.012 0.008 0.004 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125oC TA = 25oC -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 18. On-Resistance Variation with Temperature. 50 Figure 19. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 40 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 30 TA = 125oC 20 25oC 25oC 10 -55oC -55oC 0 1 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 20. Transfer Characteristics. Figure 21. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7698S Rev C1 (W) FDQ7698S Typical Characteristics : Q1 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 12A 8 VDS = 10V 20V 15V 2000 f = 1MHz VGS = 0 V CISS 1600 CAPACITANCE (pF) 6 1200 4 800 COSS 400 CRSS 2 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 22. Gate Charge Characteristics. 100 Figure 23. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s 40 SINGLE PULSE RJA = 118 C/W TA = 25 C 1 VGS = 10V SINGLE PULSE RJA = 118oC/W TA = 25oC 0.01 0.01 0.1 10s DC 30 20 0.1 10 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 24. Maximum Safe Operating Area. Figure 25. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA = 118 C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 26. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c Transient thermal response will change depending on the circuit board design. FDQ7698S Rev C1 (W) FDQ7698S Dimensional Outline and Pad Layout FDQ7698S Rev C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet SeriesTM BottomlessTM FAST CoolFETTM FASTrTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM PACMANTM POPTM ISOPLANARTM Power247TM LittleFETTM PowerTrench MicroFETTM QFET MicroPakTM QSTM MICROWIRETM QT OptoelectronicsTM MSXTM Quiet SeriesTM MSXProTM RapidConfigureTM OCXTM RapidConnectTM OCXProTM SILENT SWITCHER OPTOLOGIC SMART STARTTM OPTOPLANARTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I3 |
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