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| (R) BULD1101ET4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA Ordering Code BULD1101ET4 s s s Marking BULD1101E Shipment Tape & Reel s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 DPAK TO-252 (Suffix "T4") s APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1100 450 12 3 6 1.5 3 35 -65 to 150 150 Unit V V V A A A A W o o C C April 2003 1/7 BULD1101ET4 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-ambient Max Max 3.57 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Test Conditions V CE = 1100 V 12 450 Min. Typ. Max. 100 24 Unit A V V Emitter-BaseBreakdown I E = 1 mA Voltage (I C = 0) I C = 100 mA V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 1 A I B = 200 mA I C = 1 A I B = 200 mA IC = 1 A IC IC IC IC = = = = T j = 125 o C 0.25 0.6 1 1.5 1.5 V V V I B = 200 mA 20 23 6 4 38 44 10 7 250 mA V CE = 5 V 250 mA V CE = 5 V T j = 125 o C 2A V CE = 5 V 2A V CE = 5 V T j = 125 o C V CC = 125 V t P = 300s 80 85 18 16 2 700 s ns mJ ts tf E ar RESISTIVE LOAD Storage Time Fall Time Repetitive Avalanche Energy I C = 2.5 A V BB(off) = -5 V I B1 = -IB2 = 0.5 A (see figure 1) L = 2 mH I BR 2.5A 400 C = 1.8 nF (see figure 2) 6 Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/7 BULD1101ET4 Safe Operating Area Derating Curve Output Characteristics Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain 3/7 BULD1101ET4 DC Current Gain Resistive Load Switching Times Reverse Biased Safe Operating Area 4/7 BULD1101ET4 Figure 1: Resistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Energy Rating Test Circuit 5/7 BULD1101ET4 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 6/7 BULD1101ET4 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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