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Transistors with built-in Resistor
UNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L (UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L)
6.90.1 2.50.1 1.5
Unit: mm
Silicon NPN epitaxial planer transistor
For digital circuits
0.4
1.5 R0.9 R0.9
1.0
3.50.1
1.0 2.40.2 2.00.2
0.450.05 2 1 2.5
1.00.1
R
0.
I Features
G G
0.85
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
0.550.1
3
2.5
I Resistance by Part Number
G G G G G G G G G G G G G G G
UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219 UNR1210 UNR121D UNR121E UNR121F UNR121K UNR121L
(R1) 10k 22k 47k 10k 10k 4.7k 22k 0.51k 1k 47k 47k 47k 4.7k 10k 4.7k
(R2) 10k 22k 47k 47k -- -- -- 5.1k 10k -- 10k 22k 10k 4.7k 4.7k
1:Base 2:Collector 3:Emitter M Type Mold Package
Internal Connection
R1
1.250.05
C
B
R2
E
I Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25C)
Ratings 50 50 100 400 150 -55 to +150 Unit V V mA mW C C
Note) The part numbers in the parenthesis show conventional part number.
4.10.2
4.50.1
7
1
UNR1211/1212/1213/1214/1215/1216/1217/1218/ 1219/1210/121D/121E/121F/121K/121L Transistors with built-in Resistor
I Electrical Characteristics
Parameter Collector cutoff current UNR1211 UNR1212/1214/121E/121D Emitter cutoff current UNR1213 UNR1215/1216/1217/1210 UNR121F/121K UNR1219 UNR1218/121L Collector to base voltage Collector to emitter voltage UNR1211 Forward current transfer ratio UNR1212/121E UNR1213/1214 UNR1215*/1216*/1217*/1210* UNR121F/121D/1219 UNR1218/121K/121L Collector to emitter saturation voltage Output voltage high level Output voltage low level
(Ta=25C)
Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 VCBO VCEO IC = 10A, IE = 0 IC = 2mA, IB = 0 50 50 35 60 hFE VCE = 10V, IC = 5mA 80 160 30 20 VCE(sat) VOH IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCC = 5V, VB = 3.5V, RL = 1k VCC = 5V, VB = 10V, RL = 1k VCC = 5V, VB = 6V, RL = 1k fT VCB = 10V, IE = -2mA, f = 200MHz 80 10 22 R1 (-30%) 47 4.7 0.51 1 0.8 0.17 0.08 R1/R2 1.0 0.21 0.1 4.7 2.14 0.47 2.13 1.2 0.25 0.12 (+30%) k 4.9 0.2 0.2 0.2 0.2 MHz V 0.25 V V 460 V V mA Unit A A
UNR1213/121K UNR121D UNR121E Transition frequency UNR1211/1214/1215/121K UNR1212/1217 Input resistance UNR1213/121D/121E/1210 UNR1216/121F/121L UNR1218 UNR1219 UNR1211/1212/1213/121L UNR1214 Resistance ratio UNR1218/1219 UNR121D UNR121E UNR121F UNR121K
VOL
* hFE rank classification (UNR1215/1216/1217/1210)
Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460
2
UNR1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L
Common characteristics chart PT -- Ta
500
Total power dissipation PT (mW)
400
300
200
100
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (C)
Characteristics charts of UNR1211 IC -- VCE
160 140 IB=1.0mA 0.9mA 0.8mA Ta=25C
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10 400 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
30 10 3 1 0.3 0.1 -25C 0.03 0.01 0.1
120 100 80 60
0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta=75C
200 25C 100 -25C
0.2mA 40 20 0 0 2 4 6 8 10 12
25C
Ta=75C
0.1mA
0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
3
UNR1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L
Characteristics charts of UNR1212 IC -- VCE
160
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10 400 VCE=10V
Ta=25C 140 IB=1.0mA 0.9mA 0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
30 10 3 1 0.3 0.1 -25C 0.03 0.01 0.1
120 100 80
0.7mA 0.6mA 0.5mA 0.4mA
Forward current transfer ratio hFE
Collector current IC (mA)
300
Ta=75C
200 25C -25C
0.3mA 60 40 20 0 0 2 4 6 8 10 12 0.2mA
25C
Ta=75C
100
0.1mA
0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C
10000 3000 VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1213 IC -- VCE
160 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 400 Ta=25C
hFE -- IC
VCE=10V
Collector current IC (mA)
120 100 80
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C Ta=75C
Forward current transfer ratio hFE
140
IB=1.0mA
350 300 250 200 150 100 50 0 Ta=75C 25C -25C
60 40 20 0 0 2 4 6 8 10 12 0.2mA
0.1mA
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
4
UNR1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1214 IC -- VCE
160 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25C IC/IB=10
hFE -- IC
400 VCE=10V
30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.1 25C
IB=1.0mA
Collector current IC (mA)
120 100 80 60 40 20 0 0 2 4 6 8
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
Forward current transfer ratio hFE
140
350 300 250 200 25C 150 -25C 100 50 0
Ta=75C
0.2mA
0.1mA 10 12
-25C
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6 10000 f=1MHz IE=0 Ta=25C 3000
IO -- VIN
VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
5
UNR1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L
Characteristics charts of UNR1215 IC -- VCE
160
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10
400 VCE=10V
30 10 3 1 0.3 0.1 0.03 0.01 0.1 25C
Forward current transfer ratio hFE
140
IB=1.0mA 0.9mA 0.8mA
Ta=25C
Collector to emitter saturation voltage VCE(sat) (V)
350 300 250 200 25C 150 100 50 0 -25C Ta=75C
Collector current IC (mA)
120 100 80
0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA
Ta=75C
-25C
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1216 IC -- VCE
160
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10 400 VCE=10V 350 Ta=75C 300 250 -25C 200 150 100 50 0 25C
Ta=25C 140 IB=1.0mA
Collector to emitter saturation voltage VCE(sat) (V)
30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.1 25C
120 100
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA
80 60 40 20 0 0 2 4 6 8
0.4mA 0.3mA 0.2mA
0.1mA
-25C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
10
12
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Forward current transfer ratio hFE
Collector current IC (mA)
Collector current IC (mA)
6
UNR1211/1212/1213/1214/1215/1216/1217/1218/ 1219/1210/121D/121E/121F/121K/121L Transistors with built-in Resistor
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1217 IC -- VCE
120 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 400
hFE -- IC
VCE=10V
100
30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1
Forward current transfer ratio hFE
Collector current IC (mA)
Ta=25C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA
350 300 250 200 Ta=75C 150 100 50 0 25C -25C
80 0.4mA 0.3mA 0.2mA
60
Ta=75C
40
20
0.1mA
-25C 0.3 1 3 10 30 100
0 0 2 4 6 8 10 12
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C
10000 3000 VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
7
UNR1211/1212/1213/1214/1215/1216/1217/1218/ 1219/1210/121D/121E/121F/121K/121L Transistors with built-in Resistor
Characteristics charts of UNR1218 IC -- VCE
240 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25C IC/IB=10
hFE -- IC
160 VCE=10V
200
30 10 3 1 Ta=75C 0.3 0.1 0.03 -25C 0.01 0.1 25C
Forward current transfer ratio hFE
Collector current IC (mA)
160
IB=1.0mA 0.9mA 0.8mA 0.7mA
120
Ta=75C 80 25C -25C 40
120 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0 0 2 4 6 8 0.1mA 10 12
80
40
0
0.3 1 3 10 30 100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C
10000 3000 VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1219 IC -- VCE
240
100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25C
IC/IB=10 160
hFE -- IC
VCE=10V
200
160
IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA
10 3 1 Ta=75C 0.3 25C 0.1 0.03 -25C 0.01 0.1
Forward current transfer ratio hFE
30
Collector current IC (mA)
120
120 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12
80
Ta=75C 25C -25C
80
40
0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
8
UNR1211/1212/1213/1214/1215/1216/1217/1218/ 1219/1210/121D/121E/121F/121K/121L Transistors with built-in Resistor
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C
VIN -- IO
100 30 VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1210 IC -- VCE
60
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10 400 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
50
30 10 3 1 Ta=75C 0.3 25C 0.1 0.03 0.01 0.1 -25C
Forward current transfer ratio hFE
IB=1.0mA 0.9mA 0.8mA
Ta=25C
350 300 Ta=75C 250 25C 200 150 100 50 0 -25C
Collector current IC (mA)
40 0.4mA 0.5mA 0.6mA 0.7mA 0.1mA
30
0.3mA
20
10
0 0 2 4 6 8 10 12
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C
VIN -- IO
VO=5V Ta=25C 100 30 VO=0.2V Ta=25C
10000 3000
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
9
UNR1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L
Characteristics charts of UNR121D IC -- VCE
30
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10 160 VCE=10V Ta=75C 25C -25C 120
Collector to emitter saturation voltage VCE(sat) (V)
25
30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C
IB=1.0mA 20
15 0.2mA 10 0.1mA
Forward current transfer ratio hFE
100
Collector current IC (mA)
Ta=25C 0.9mA 0.8mA 0.5mA 0.7mA 0.4mA 0.6mA 0.3mA
80
Ta=75C
40
5
0 0 2 4 6 8 10 12
0 0.3 1 3 10 30 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C
VIN -- IO
VO=5V Ta=25C
100 30 VO=0.2V Ta=25C
10000 3000
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 1.5
2.0
2.5
3.0
3.5
4.0
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR121E IC -- VCE
60
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10 160 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
50
30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.1 25C
Forward current transfer ratio hFE
IB=1.0mA 0.7mA Ta=25C 0.9mA 0.6mA 0.8mA
Collector current IC (mA)
120
Ta=75C 25C -25C
40 0.3mA 0.4mA 0.5mA 0.2mA
30
80
0.1mA 20
40
10
-25C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
0 0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
10
UNR1211/1212/1213/1214/1215/1216/1217/1218/ 1219/1210/121D/121E/121F/121K/121L Transistors with built-in Resistor
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 1.5
2.0
2.5
3.0
3.5
4.0
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR121F IC -- VCE
240 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25C IC/IB=10 160
hFE -- IC
VCE=10V
200
30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C
Forward current transfer ratio hFE
Collector current IC (mA)
160
0.9mA 0.8mA 0.7mA 0.6mA
120
Ta=75C 80 25C -25C
120
IB=1.0mA 0.5mA 0.4mA 0.3mA
80
40
40 0.2mA 0.1mA 0 0 2 4 6 8 10 12
-25C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C
VIN -- IO
VO=5V Ta=25C
100 30 VO=0.2V Ta=25C
10000 3000
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
11
UNR1211/1212/1213/1214/1215/1216/1217/1218/ 1219/1210/121D/121E/121F/121K/121L Transistors with built-in Resistor
Characteristics charts of UNR121K IC -- VCE
240 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25C IC/IB=10 240
hFE -- IC
VCE=10V
200
Forward current transfer ratio hFE
200
Collector current IC (mA)
10
160 IB=1.2mA 1.0mA 0.8mA 80 0.6mA 0.4mA 0.2mA 0 0 2 4 6 8 10 12
160 Ta=75C 120 25C 80 -25C 40
120
1
25C 0.1
Ta=75C
40
-25C
0.01 1 3 10 30 100 300 1000
0 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
VIN -- IO
f=1MHz IE=0 Ta=25C 100 30 VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
4
Input voltage VIN (V)
1 3 10 30 100
10 3 1 0.3 0.1 0.03
3
2
1
0
0.01 0.1
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Output current IO (mA)
Characteristics charts of UNR121L IC -- VCE
240
100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25C
IC/IB=10
hFE -- IC
240 VCE=10V
200
Forward current transfer ratio hFE
200
Collector current IC (mA)
10
160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA
160
Ta=75C
1
120
25C
Ta=75C 25C 0.1 -25C
-25C 80
40 0.2mA 0 0 2 4 6 8 10 12
40
0.01 1 3 10 30 100 300 1000
0 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
12
UNR1211/1212/1213/1214/1215/1216/1217/1218/ 1219/1210/121D/121E/121F/121K/121L Transistors with built-in Resistor
Cob -- VCB
6 100 f=1MHz IE=0 Ta=25C
IO -- VIN
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
4
Input voltage VIN (V)
10
3
1
2
0.1
1
0 1 3 10 30 100
0.01 0.1
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Output current IO (mA)
13
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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