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| Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y (UN1121/1122/1123/1124/112X/112Y) Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 0.4 6.90.1 1.5 1.5 R0.9 R0.9 2.50.1 1.0 3.50.1 R 0. 7 q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.00.1 2.40.2 2.00.2 0.85 0.550.1 0.450.05 s Resistance by Part Number q q q q q q 3 2 1 UNR1121 UNR1122 UNR1123 UNR1124 UNR112X UNR112Y (R1) 2.2k 4.7k 10k 2.2k 0.27k 3.1k (R2) 2.2k 4.7k 10k 10k 5k 4.6k 2.5 2.5 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings -50 -50 -500 600 150 -55 to +150 Unit V V mA mW C C R1 1.250.05 C B R2 E Note) The part numbers in the parenthesis show conventional part number. 4.10.2 4.50.1 s Features 1.0 1 Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y s Electrical Characteristics Parameter Collector cutoff current (Ta=25C) Symbol ICBO Conditions VCB = -50V, IE = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 IC = -10A, IE = 0 -50 40 hFE VCE = -10V, IC = -100mA 50 60 20 VCE(sat) IC = -100mA, IB = -5mA IC = -10mA, IB = - 0.3mA IC = -50mA, IB = -5mA VCC = -5V, VB = - 0.5V, RL = 500 VCC = -5V, VB = -3.5V, RL = 500 VCB = -10V, IE = 50mA, f = 200MHz 200 2.2 4.7 R1 (-30%) 10 0.27 3.1 0.8 1.0 0.22 0.054 0.67 1.2 (+30%) k -4.9 - 0.2 - 0.25 - 0.25 - 0.15 V V MHz V min typ max -1 - 0.1 -1 - 0.5 -5 IEBO VCBO -2 -1 V mA Unit A A UNR112X ICBO Collector cutoff current ICEO UNR112X ICEO Emitter cutoff current UNR1121 UNR1122/112X/112Y UNR1123/1124 Collector to base voltage Forward current transfer ratio UNR1121 UNR1122/112Y UNR1123/1124 UNR112X Collector to emitter saturation voltage UNR112X VCE(sat) UNR112Y VCE(sat) Output voltage high level Output voltage low level Transition frequency UNR1121 Input resistance UNR1122 UNR1123 UNR112X UNR112Y Resistance ratio UNR1124 UNR112X UNR112Y R1/R2 VOH VOL fT Common characteristics chart PT -- Ta 800 Total power dissipation PT (mW) 600 400 200 0 0 40 80 120 160 Ambient temperature Ta (C) 2 Transistors with built-in Resistor Characteristics charts of UNR1121 IC -- VCE -240 -100 UNR1121/1122/1123/1124/112X/112Y VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=-10V -200 -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 -0.01 -1 Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75C -160 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -120 200 -80 100 25C -40 -0.2mA -0.1mA -25C -25C -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 0 0 -2 -4 -6 -8 -10 -12 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 12 IO -- VIN f=1MHz IE=0 Ta=25C VIN -- IO VO=-5V Ta=25C -100 -30 VO=-0.2V Ta=25C -10000 -3000 Collector output capacitance Cob (pF) 10 Output current IO (A) 8 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 6 4 2 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1122 IC -- VCE -300 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 160 VCE= -10V Ta=75C Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -250 -30 -10 -3 -1 -0.3 25C -0.1 -0.03 -0.01 -1 -25C Forward current transfer ratio hFE Collector current IC (mA) IB=-1.0mA -200 -0.9mA -0.8mA -150 -0.7mA -0.6mA -0.5mA -100 -0.4mA -0.3mA -50 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 120 25C Ta=75C 80 -25C 40 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 3 Transistors with built-in Resistor Cob -- VCB 24 UNR1121/1122/1123/1124/112X/112Y IO -- VIN VIN -- IO VO=-5V Ta=25C -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 20 f=1MHz IE=0 Ta=25C -10000 -3000 Output current IO (A) 16 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 12 8 4 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1123 IC -- VCE -240 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -100 -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 -25C -0.01 -1 -3 -10 -30 -100 -300 -1000 0 -1 -3 IC/IB=10 200 VCE= -10V hFE -- IC Ta=75C 25C 150 -200 -160 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA Forward current transfer ratio hFE Collector current IC (mA) -120 100 -25C -80 -0.4mA -0.3mA 50 -40 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 24 -10000 IO -- VIN f=1MHz IE=0 Ta=25C VO=-5V Ta=25C VIN -- IO -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) -3000 20 Output current IO (A) 16 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 12 8 4 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 Transistors with built-in Resistor Characteristics charts of UNR1124 IC -- VCE -300 UNR1121/1122/1123/1124/112X/112Y VCE(sat) -- IC -100 hFE -- IC IC/IB=10 400 VCE= -10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -250 -30 -10 -3 -1 Ta=75C -0.3 -0.1 -0.03 -0.01 -1 -25C 25C Forward current transfer ratio hFE 350 300 250 Ta=75C 200 150 100 50 0 -1 25C -25C Collector current IC (mA) IB=-1.0mA -200 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -100 -0.4mA -0.3mA -50 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -150 -3 -10 -30 -100 -300 -1000 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 24 -10000 f=1MHz IE=0 Ta=25C -3000 IO -- VIN VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 20 Output current IO (A) 16 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 12 8 4 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR112X IC -- VCE -240 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE= -10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -200 -30 -10 -3 -1 -0.3 25C -0.1 -0.03 -0.01 -1 Forward current transfer ratio hFE 200 Collector current IC (mA) IB=-1.6mA -160 -1.4mA -1.2mA -120 -1.0mA -0.8mA -80 -0.6mA -40 -0.4mA -0.2mA 0 0 -2 -4 -6 -8 -10 -12 160 Ta=75C 25C 80 -25C 40 120 Ta=75C -25C -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 5 Transistors with built-in Resistor Cob -- VCB 24 UNR1121/1122/1123/1124/112X/112Y VIN -- IO Collector output capacitance Cob (pF) 20 f=1MHz IE=0 Ta=25C -100 -30 VO=-0.2V Ta=25C 16 Input voltage VIN (V) -10 -3 -1 -0.3 -0.1 -0.03 12 8 4 0 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR112Y IC -- VCE -240 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -200 Forward current transfer ratio hFE -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -1 Ta=75C 25C -25C 200 Collector current IC (mA) IB=-1.2mA -160 -1.0mA -0.8mA -0.6mA -80 -0.4mA -40 -0.2mA 0 0 -2 -4 -6 -8 -10 -12 160 Ta=75C 25C -25C -120 120 80 40 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 24 -100 VIN -- IO f=1MHz IE=0 Ta=25C VO=-0.2V Ta=25C Collector output capacitance Cob (pF) -30 20 16 Input voltage VIN (V) -10 -3 -1 -0.3 -0.1 -0.03 12 8 4 0 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Output current IO (mA) 6 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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