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PD - 9.1360
PRELIMINARY
l l l l l l
IRL2703S
HEXFET(R) Power MOSFET
D
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 30V
G S
RDS(on) = 0.04 ID = 24A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
D 2 Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
24 17 96 45 0.30 16 77 14 4.5 3.5 -55 to + 175 300 (1.6mm from case)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mount,steady-state)**
Min.
---- ----
Typ.
---- ----
Max.
3.3 40
Units
C/W
11/18/96
IRL2703S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss
Min. 30 --- --- --- 1.0 6.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.030 --- --- --- --- --- --- --- --- --- --- --- 8.5 140 12 20
Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, I D = 1mA 0.040 VGS = 10V, ID = 14A 0.060 VGS = 4.5V, I D = 12A --- V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 14A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 100 V GS = 16V nA -100 VGS = -16V 15 ID = 14A 4.6 nC VDS = 24V 9.3 V GS = 4.5V, See Fig. 6 and 13 --- VDD = 15V --- I D = 14A ns --- RG = 12, VGS = 4.5V --- RD = 1.0, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 450 --- VGS = 0V 210 --- pF VDS = 25V 110 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr t on
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol --- --- 24 showing the A G integral reverse --- --- 96 p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 14A, VGS = 0V --- 65 97 ns TJ = 25C, IF = 14A --- 140 210 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
ISD 14A, di/dt 140A/s, VDD V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ 175C VDD = 15V, starting TJ = 25C, L = 570H Pulse width 300s; duty cycle 2%. Uses IRL2703 data and test conditions. RG = 25, IAS = 14A. (See Figure 12) ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
Repetitive rating; pulse width limited by
IRL2703S
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V TOP
1000
ID , D ra in -to -S o u rc e C u rre n t (A )
100
ID , D ra in -to -S o u rce C u rre n t (A )
100
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
10
10
1
1
2.5V
2.5V
0.1 0.1 1
20 s PU LSE W ID TH T J = 2 5C
10
A
0.1 0.1 1
2 0 s PU L SE W ID TH T J = 1 75 C
10
100
A
100
V D S , Drain-to-Source V oltage (V )
V D S , Drain-to-S ource Voltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
I D , D r ain- to-S ourc e C urre nt (A )
T J = 2 5 C T J = 1 7 5 C
10
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = 24 A
1.5
1.0
1
0.5
0.1 2 3 4 5 6
V DS = 1 5 V 2 0 s P U L S E W ID T H
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction T emperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL2703S
1000
V G S , G a te -to -S o u rce V o lta g e (V )
800
V GS C is s C rss C oss
= 0 V, f = 1M H z = C gs + C gd , Cds SH OR TE D = C gd = C d s + C gd
15
I D = 14A V DS = 2 4V V DS = 1 5V
12
C , C a p a c ita n c e (p F )
C i ss
600
C o ss
9
400
6
C rs s
200
3
0 1 10 100
A
0 0 4 8
FO R TEST CIR CU IT SEE FIG UR E 13
12 16 20
A
V D S , D rain-to-S ource Voltage (V )
Q G , T otal Gate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
I S D , R e v e rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n)
TJ = 1 75 C T J = 25 C
10
I D , D ra in C u rre n t (A )
100
10 s
10 0s 10 1 ms
1 0.4 0.8 1.2 1.6
VG S = 0 V
2.0
A
1 1
T C = 25 C T J = 17 5C S ing le Pulse
10
1 0m s
2.4
A
100
V S D , S ource-to-Drain Voltage (V )
V D S , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL2703S
24
VDS
20
RD
VGS RG
I D , D ra in C u rre n t (A m p s)
D.U.T.
+
16
-VDD
5.0V
12 Pulse Width 1 s Duty Factor 0.1 %
8
Fig 10a. Switching Time Test Circuit
VDS 90%
4
0 25 50 75 100 125 150
A
175
TC , Case Temperature (C )
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Therm al Response (Z th JC )
D = 0 .5 0 1 0.2 0 0 .1 0 0.05 0.02 0.0 1 S ING L E P UL S E ( THE R M A L R E S P O N S E )
N o tes : 1 . D u ty fa c to r D = t 1 / t 2 PD M
0.1
t
1 t2
0.01 0.00001
2 . P e a k TJ = P D M x Z th J C + T C
A
1
0.0001
0.001
0.01
0.1
t 1 , R e cta n g u la r P u ls e D u r a tio n ( se c )
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL2703S
VDS D.U.T. RG + V - DD
5.0 V
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
L
160
TO P B OTTO M
120
ID 5.7 A 9 .9A 14A
IAS tp
0.01
80
Fig 12a. Unclamped Inductive Test Circuit
40
V(BR)DSS tp VDD VDS
0
V D D = 1 5V
25 50 75 100 125 150
A
175
Starting TJ , Junction T emperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
4.5 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL2703S
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRL2703S
Package Outline
D2Pak Outline Dimensions are shown in millimeters (inches)
1 0 .5 4 (.4 15 ) 1 0 .2 9 (.4 05 ) 1 .4 0 (.0 5 5) M A X. -A 4
4.6 9 (.1 85 ) 4.2 0 (.1 65 )
-B 1 .3 2 (.0 5 2) 1 .2 2 (.0 4 8) 1 0 .1 6 (.40 0 ) R E F.
4 1 .7 8 (.0 7 0) 1 .2 7 (.0 5 0) 1 2 3 1 5 .4 9 (.61 0 ) 1 4 .7 3 (.58 0 ) 5 .2 8 (.2 0 8) 4 .7 8 (.1 8 8) 1.4 0 (.0 55 ) 1.1 4 (.0 45 ) 2X
5 .0 8 ( .20 0) 2.7 9 ( .1 10 ) 2.2 9 ( .0 90 )
6.4 7 (.2 55 ) 6.1 8 (.2 43 )
2.6 1 (.1 0 3) 2.3 2 (.0 9 1) 1.39 (.0 55 ) 1.14 (.0 45 ) 8 .8 9 (.35 0 ) R E F.
3X
0 .93 (.03 7 ) 0 .69 (.02 7 )
0 .2 5 ( .0 1 0) M AMB
0.5 5 (.0 22 ) 0.4 6 (.0 18 )
N O TES: 1 DIMEN SIO NS AFTER SO LD ER D IP. 2 DIMEN SIO NIN G & TO LERAN CIN G PER ANSI Y14.5M, 1982 3 CO N TRO LLIN G D IMENSION : IN CH . 4 DIMEN SIO NS AR E SH OW N IN MILLIMETER S (IN CH ES). 5 HEATSIN K & LEAD D IMEN SIO N S D O NO T IN CLU D E BU R RS.
A
Part Marking Information
D2Pak
E XAM PL E : THIS IS A N IR F5 30 S W ITH AS SE MB LY L OT C OD E 9B 1M
IN TER NA TIO NA L R EC TIF IER LO G O A SS EMB LY LOT C OD E
A
PAR T N UM BE R F 53 0S 92 46 9B 1M
D ATE C OD E (YYW W ) Y Y = YE AR W W = W E EK
IRL2703S
Tape & Reel Information
D2Pak Dimensions are shown in millimeters (inches)
TRR
1.6 0 (.063 ) 1.5 0 (.059 ) 4.10 ( .1 61) 3.90 ( .1 53)
1 . 6 0 (. 06 3 ) 1 . 5 0 (. 05 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 )
F E E D D I R E C T IO N
1.85 (.0 73) 1.65 (.0 65)
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
2 4 . 3 0 (. 9 5 7 ) 2 3 . 9 0 (. 9 4 1 )
TR L
1 0 . 9 0 (. 4 2 9 ) 1 0 . 7 0 (. 4 2 1 ) 1 . 7 5 (. 0 6 9 ) 1 . 2 5 (. 0 4 9 ) 1 6 .1 0 ( .6 3 4 ) 1 5 .9 0 ( .6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 )
F E E D D I R E C T IO N
1 3 .5 0 (. 5 32 ) 1 2 .8 0 (. 5 04 )
2 7 .4 0 (1 .0 7 9) 2 3 .9 0 (.9 4 1 )
4
330.00 (14.173) M AX.
6 0. 00 (2 .3 6 2) M IN .
NOTES : 1. C O M F O R M S T O E IA - 41 8 . 2. C O N T R O LL IN G D IM E N S I O N : M IL L IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F LA N G E D I S T O R T IO N @ O U T E R E D G E .
26.40 (1.039) 24.40 (.961)
3 0. 4 0 (1 .1 9 7) MAX . 4
3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/96

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