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| Advanced Technical Information MIO 1200-33E11 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C' 3 5 IC80 = 1200 A = 3300 V VCES VCE(sat) typ. = 3.1 V C 7 C 9 G 2 E' 1 E 4 E 6 E 8 IGBT Symbol VCES VGES IC80 ICM tSC TC = 80C tp = 1 ms; TC = 80C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125C Conditions VGE = 0 V Maximum Ratings 3300 20 1200 2400 10 V V A A s Features * NPT IGBT - Low-loss - Smooth switching waveforms for good EMC * Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications * AC power converters for - industrial drives - windmills - traction * LASER pulse generator Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 3.1 3.8 6 8 V V V VCE(sat) VGE(th) ICES IGES Eon Eoff RthJC IC = 1200 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 240 mA; VCE = VGE VCE = 3300 V; VGE = 0 V; TVJ = 125C VCE = 0 V; VGE = 20 V; TVJ = 125C Inductive load; TVJ = 125C; VGE = 15 V; VCC = 1800V; IC = 1200A; RG = 1; L = 100nH 120 mA 500 nA 1750 2000 mJ mJ 0.0085 K/W Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-3 405 Advanced Technical Information MIO 1200-33E11 Diode Symbol IF80 IFSM Conditions TC = 80C VR = 0 V; TVJ = 125C; tp = 10 ms; half-sinewave Maximum Ratings 1200 12000 A A Symbol VF IRM trr QRR Erec RthJC Conditions IF = 1200 A; TVJ = 25C TVJ = 125C Characteristic Values min. typ. max. 2.30 2.35 1680 800 1320 1740 V V A ns C mJ 0.017 K/W VCC = 1800 V; IC = 1200 A; VGE = 15 V; RG = 1 ; TVJ = 125C Inductive load; L = 100nH Forward voltage is given at chip level Module Symbol TJM TVJ Tstg Md Conditions max junction temperature Operatingtemperature Storage temperature Mounting torque Base-heatsink, M6 screws Main terminals, M8 screws Maximum Ratings +125 -40...+125 -40...+125 4-6 8 - 10 C C C Nm Nm Symbol dA dS VISOL VE CTI L Rterm-chip * RthCH Weight Conditions Clearance distance Surface creepage distance 1 min, f = 50 Hz Partial discharge extinction voltage f = 50 Hz, QPD 10pC Comperative tracking index Module stray inductance, C to E terminal Resistance terminal to chip per module; grease = 1 W/m*K terminal to base terminal to terminal terminal to base terminal to terminal Characteristic Values min. typ. max. 26 26 56 56 mm mm mm mm V~ V 10500 5100 600 18 0.12 0.006 1500 nH m K/W g *) V = VCE(sat) + Rterm-chip * IC resp. V = VF + Rterm-chip * IF 2-3 (c) 2004 IXYS All rights reserved 405 Advanced Technical Information MIO 1200-33E11 Outline drawing Note: all dimensions are shown in mm (c) 2004 IXYS All rights reserved 3-3 405 |
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